本論文以建構一個具有快速熱處理基材的低壓化學氣相沉積系統，並藉以研究以二氯矽烷為原料來沉積矽磊晶膜的變數效應。本研究以掌握裝置初期試車發生的問題並尋找可能的解決方案為研究目的。實驗過程分別針對紅外線加熱燈位置、反應總壓、反應氣體進氣口位置以及是否使用到預載型腔體作晶片的傳輸，探討這些變數對於二氯矽烷在Si(100)基材上長膜的影響。實驗結果顯示，在總壓為10 torr時，反應氣體進氣口僅以4孔的出氣組態會導致在二吋晶片上有長膜厚度不勻的現象。而在未使用預載型腔體傳輸基材的情況下，長膜呈現多晶而非單晶矽的晶型。可能的原因為長膜腔體內殘留的二氯矽烷、水氣及氧氣造成加溫過程石墨載台的氧化腐蝕以致於有碳汙染而導致矽長膜多晶化甚至有碳化矽鍵結形成的問題。

This thesis aims to construct a low-pressure chemical vapor deposition (LPCVD) system with rapid thermal process and investigate the variable effects of using dichlorosilane (DCS) as the precursor for silicon epitaxial films deposition. We aimed to identify and address the issues that occurred during the initial system construction and to seek possible solutions. First, experimental process issues such as infrared heating lamp focus positions, total reaction pressure, shower head configuration, and the presence or absence of a load-lock chamber for substrate transfer were investigated. Their influence on Si film deposition using DCS on Si(100) substrates was evaluated. The experimental results indicated that using a four-hole shower head at a total pressure of 10 torr resulted in, non-uniform film thickness on a 2-inch wafer. Furthermore, when no load-lock chamber was applied for substrate transfer, the film exhibited a polycrystalline structure rather than monocrystalline silicon. This is most likely due to residual DCS, adsorbed-water, and oxygen left in the deposition chamber, causing oxidation or corrosion of the graphite susceptor during the heating process, and therefore resulting in carbon contamination on the silicon films, polycrystallization of film quality or even unintentional SiC bond formation.

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