TaN、TaN+Cu及TiNO薄膜電阻元件｜國立臺灣科技大學博碩士論文系統

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研究生：	余奕衡 I-Heng Yu
論文名稱：	TaN、TaN+Cu及TiNO薄膜電阻元件 Study of TaN , TaN+Cu and TiNO Thin Film Resistors
指導教授：	周賢鎧 Shyankay Jou
口試委員:	黃柏仁 Bohr-Ran Huang 胡毅 Yi Hu
學位類別：	碩士 Master
系所名稱：	應用科技學院 - 應用科技研究所 Graduate Institute of Applied Science and Technology
論文出版年：	2010
畢業學年度：	98
語文別：	中文
論文頁數：	83
中文關鍵詞：	薄膜電阻、氮化鉭、氮化氧鈦、銅
外文關鍵詞：	thin film resistor, TCR, TaN, TiNO, TaN+Cu
相關次數：	點閱：234 下載：9
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上一筆

本研究目的在開發高阻值(≧3 kΩ)以及低TCR值(±25 ppm/℃)之薄膜電阻元件。實驗材料系統可分為氮化鉭(TaN)、共濺鍍氮化鉭與銅複合膜(TaN/Cu)以及氮化氧鈦(TiNO)，三種材料系統均可透過改變薄膜成份與結構調整電阻以及電阻溫度係數。
本實驗使用低略角X-ray繞射儀分析薄膜結構與晶粒尺寸，使用場發射電顯微鏡觀察薄膜之表面形態，使用表面輪廓分析儀量測薄膜厚度以及使用Keithley 2410量測薄膜片電阻以及電阻溫度係數。
實驗結果顯示氮化鉭(TaN)薄膜之電阻與氮氣通量成正比，與薄膜厚度成反比，TCR絕對值與氮氣通量成反比，與薄膜厚度成正比；真空退火處理使TaN薄膜偏向金屬特性，使Ta2N薄膜偏向氮化物特性。共濺鍍氮化鉭與銅薄膜(TaN/Cu)之電阻與銅濺鍍功率在銅濺鍍功率低於30 W時成正比，高於30 W時成反比，TCR值與銅濺鍍功率成正比。氮化氧鈦薄膜(TiNO)之電阻與退火時間之斜率與大氣退火溫度成正比，TCR與退火時間之斜率與大氣退火溫度成反比。
在製程條件為鈦濺鍍功率50 W，鍍膜溫度25 ℃，氮氣通量10 %，薄膜厚度100 nm之氮化鈦薄膜在大氣下270 ℃退火5分鐘、300 ℃退火1分鐘其電阻值高於計劃目標值3000 Ω，TCR值滿足目標±25 ppm/℃之範圍在退火時間5至10分鐘內。

The target of this research is to develop thin film resistor (TFR) with a high resistance (≥3000 Ω) and low temperature coefficient of resistance (±25 ppm/℃)

The materials investigated in this study are TaN , TaN-Cu and TiNO , and all of their resistivity and TCR can be controlled by change their composition and structure.

The morphology and crystal size of thin film were analyzed by XRD , surface morphology of thin film by FE-SEM , thickness of thin film by Stylus Profiler and sheet resistance and temperature coefficient of resistance(TCR) by Keithley 2410.

The experimental result indicated that the resistivity of TaN was proportional to partial pressure of nitrogen , inversely proportional to film thickness. The modulus of TCR of TaN is related with film thickness , and inversely correlated with partial pressure of nitrogen.

The resistivity of TaN-Cu was increased with sputtering power of copper while power smaller than 30 W , and it decreased with sputtering power of copper at higher than 30 W. However , the TCR of TaN-Cu was proportional to sputtering power of Cu all the time.

The resistance of TiNO was increased with time of heat treatment on hot plate in ambient , and TCR was decreased with temperature of hot plate.

In this study , we found the applicable process parameters of TiNO TFR were DC 70 W , 10 % of partial pressure of nitrogen , room temperature deposition , and heat treatment by hot plate in ambient for 5 to 10 minutes. The resistance of TiNO was higher than 3000 Ω and there was a ZTC point (zero temperature coefficient of resistivity between the region of thermal treatment time of 5 to 10 minutes.

中文摘要.........................................................................................................................i
英文摘要........................................................................................................................ii
致謝...............................................................................................................................iii
目錄................................................................................................................................v
圖目錄.........................................................................................................................viii
表目錄..........................................................................................................................xii
第一章 前言與研究目的	1
第二章 文獻回顧	3
2-1 薄膜電阻	3
2-2 影響薄膜電阻性質的因素	5
2-3 Ta-N薄膜	6
2-3-1 TaN薄膜之結構分析...................................................................................7
2-3-2 TaN薄膜之電子性質...................................................................................8
2-3-3其他影響TaN性質之參數.........................................................................10
2-4 TaN/Cu薄膜	.18
2-4-1 TaN+Cu薄膜之結構分析.........................................................................18
2-4-2 TaN+Cu薄膜之電子性質.........................................................................21
2-5 TiNO薄膜	23
2-5-1 TiNO薄膜之結構分析...............................................................................25
2-5-2 TiNO薄膜之電子性質...............................................................................26
第三章 實驗方法與步驟	28
3-1 實驗用材料與藥品規格	28
3-2 實驗儀器與裝置	29
3-3 實驗步驟	30
3-3-1實驗流程.....................................................................................................30
3-3-2 基材清洗流程............................................................................................33
3-4 製程儀器介紹	34
3-4-1 磁控式濺鍍系統........................................................................................34
3-4-2 磁控式共濺鍍系統....................................................................................35
3-4-3 真空爐(石英管狀爐).................................................................................36
3-4-4 加熱板........................................................................................................37
3-5 薄膜之分析儀器	37
3-5-1 掃描式電子顯微鏡....................................................................................37
3-5-2 X光繞射儀.................................................................................................38
3-5-3 四點探針....................................................................................................40
3-6 薄膜之特性分析	40
3-6-1 薄膜厚度的量測........................................................................................40
3-6-2 微晶尺寸的計算........................................................................................41
3-6-3 片電阻及電阻係數的量測........................................................................41
3-6-4 電阻溫度係數的計算................................................................................42
第四章 結果與討論	43
4-1 TaN薄膜..	43
4-1-1 TaN薄膜之形態分析.................................................................................43
4-1-2 TaN薄膜之電子性質分析.........................................................................53
4-1-3 TaN薄膜之研究結果.................................................................................57
4-2 TaN+Cu薄膜	.58
4-2-1 TaN+Cu薄膜前TaN分析........................................................................58
4-2-2 TaN+Cu薄膜之形態分析.........................................................................59
4-2-3 TaN+Cu薄膜之電子性質分析.................................................................63
4-2-4 TaN+Cu薄膜之研究結果.........................................................................64
4-3 TiNO薄膜	65
4-3-1 TiNO薄膜前TiN分析..............................................................................65
4-3-2 TiNO薄膜之電子性質分析.......................................................................72
4-3-3 TiNO薄膜之研究結果...............................................................................74
第五章 結論	75
參考文獻......................................................................................................................78
附錄..............................................................................................................................82

                                

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