在過去，本實驗室是以氮化鎵磊晶於藍寶石基板(GaN-on-Sapphire)的晶圓，並搭配客製化的磊晶式DBR與介電質DBR做為下上反射鏡，成功製作出垂直共振腔面射型雷射(Vertical-cavity surface-emitting laser, VCSEL)。本研究嘗試利用商用氮化鎵磊晶於矽基板的發光二極體晶圓研發VCSEL，並將銀鏡及介電質DBR作為下上反射鏡，完成元件製作並量測每一階段的光電特性變化。
本研究使用了矽擴散製程專利來做元件的電流阻擋層，有效定義出三種不同尺寸的發光孔徑，分別為：20 m、10 m以及5 m。再使用離子深蝕刻機選擇性移除矽基板，以電子束蒸鍍機來鍍製銀鏡，作為下層反射鏡，並從量測結果中可以發現，在銀鏡製作完成後，光功率的最大增長幅度可以達到81.2%。
在介電質DBR鍍製完成後，可以從光譜量測中看出元件的共振效果明顯，且模距皆符合光縱模估計值。當電流逐漸增加時，元件也具有穩定的峰值波長， 且收窄半高寬。

In the past, our laboratory had successfully fabricated vertical-cavity surface-emitting lasers (VCSELs) based on gallium nitride (GaN) grown on sapphire substrate (GaN-on-sapphire) with a customized epitaxial distributed Bragg reflector (DBR) and a dielectric DBR as the bottom and top reflectors.
This study try to develop VCSELs based on GaN LED epitaxy on silicon substrate (GaN-on-Si) wafers commercially available. Dielectric DBRs and silver mirrors were utilized as the top and bottom reflectors, respectively. Device fabrication and characterizations after each major processing step have been carried out.
In this study, a patented silicon diffusion process was employed to fabricate the current blocking layer for the devices, effectively defining three different emission aperture sizes: 20 μm, 10 μm, and 5 μm. Micro-LEDs were successfully fabricated. Then, deep reactive ion etching was utilized to selectively remove the Si substrate where a silver thin film served as the bottom reflector was deposited by an electron beam evaporator. Measurement results showed a maximum increase in optical power of 81.2% after adding the silver mirror.
Furthermore, spectral measurements were conducted on the devices after completing the dielectric DBR deposition. The results clearly demonstrated the resonant behavior of the devices. As the current increased gradually, the devices exhibited stable peak wavelengths and narrowing in spectral width.

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