近年來，隨著能源危機的出現，許多研究者也紛紛投入CIGSe薄膜太陽能電池的相關研究。在此領域之中，時常會使用硫化鎘以及氧化鋅作為太陽能電池的n型半導體層，然而，硫化鎘本身含有毒性，因此本實驗要利用GaN以及InGaN來取代。
本實驗是利用共濺鍍金屬的方式，製備出CIGSe的前驅物薄膜，接著利用不同的溫度進行硒化退火。藉由掃描式電子顯微鏡(FE-SEM)、能量散射光譜儀(EDS)、X光繞射分析儀(XRD)、與霍爾量測等來分析薄膜性質。之後利用濺鍍法製備不同的含銦比例的GaN薄膜做為太陽能電池元件中的n型半導體層，最後使用擬太陽光測試儀器來測試其電池的光電轉換效率。
實驗結果顯示，利用共濺鍍法以及二階段600℃硒化反應製備CIGSe薄膜，經由FE-SEM、EDS以及XRD分析可得知此薄膜為單相CuIn0.7Ga0.3Se2結構，其晶粒最佳尺寸約為1.0 ~1.5 μm。以結構A製得之元件，得到3.07%之光電轉換效率。接著以利用RF濺鍍法製備In0.15Ga0.85N薄膜替代CdS為太陽能電池元件的緩衝層材料，無硫化鎘的太陽能電池結構I得到最佳的結果，但僅1.04%之光電轉換效率。

In recent years, confronting with the problem of energy crisis, Cu(InGa)Se2 or CIGSe thin-film solar cells are gradually getting researchers’ attentions. In this field, solar cell device almost uses CdS as a buffer layer and ZnO as a n type one. Because CdS is toxic, GaN and InGaN in this work have been taken to replace CdS/ZnO for designing different solar cell structures.
In the study, CIGSe precursor thin films were prepared by sputtering, followed by selenization with different annealing temperatures. The characterizations of thin films were analyzed by field-emission scanning electron microscopy (FE-SEM) epuipped with an energy dispersive X-ray spectrometer (EDS), X-ray diffractometry (XRD), and Hall measurement. Different Indium contents for InxGa1-xN that were used as n type layers for solar cell devices were also prepared by sputtering. The performance of the devices was then evaluated under the standard AM 1.5 illumination.
The results showed that CIGSe thin films after made by co-sputtering and a two-step selenization process at 600oC had better surface morphology with the grain size of 1.0 – 1.5 m. FE-SEM, XRD and EDS analyses demonstrated that the films were single phase with the close component of CuIn0.7Ga0.3Se2 even selenization at different temperatures. Then, InxGa1-xN thin films made by RF sputtering replaced CdS as the buffer layer for the solar cell structure. CdS-free CIGSe/In0.15Ga0.85N/ZnO solar cell with the structure I had the best conversion efficiency of 1.04% conversion, while it was 3.07% for the traditional CIGSe/CdS/ZnO solar cell structure.

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