單晶碳化矽基板(Silicon Carbide, SiC)在功率元件市場的潛力極大，但單晶碳化矽基板因高硬度及抗化學性等特質，造成製造過程面臨加工時間冗長等問題。本研究主要研究4H單晶碳化矽基板的研光(Lapping)與化學機械拋光(Chemical Mechanical Polishing, CMP)兩製程，以降低製程時間。研光製程中製作一樹酯銅鐵研光盤，並加入過氧化氫於鑽石研光液中，使4H單晶碳化矽基板在研光時產生OH自由基，再生成反應層，此反應層硬度較4H單晶碳化矽基板軟，最後透過鑽石磨料以機械方式移除材料。第二部分以本實驗室建構之複合式能量化學機械拋光系統(Hybrid-Energy Chemical Mechanical Polishing, HECMP)進行拋光，此系統將氧氣導入製程設備腔體，以提升拋光液及製程空間的含氧量，增加化學反應的速率，達到較高效率之拋光製程。本研究結果於兩吋單晶碳化矽基板應用 於樹酯銅鐵研光盤搭配添加過氧化氫之鑽石液之研光方式較一般傳統研光效率提升17 %，並透過接觸角、維克氏硬度與X-ray光電子能譜，驗證表面產生較軟之二氧化矽反應層。HECMP中兩吋單晶碳化矽基板拋光效率較CMP提升19 %，並透過實驗結果，建立一材料移除率模型，最後以四吋4H單晶碳化矽，應用本論文研光方式與HECMP，比較一般研光與化學機械拋光整合後之加工效率，本論文所提出之整合方法可降低29 %的製程時間，達成降低製程時間之目標。未來研究可著重於試量產製程之研發測試。

Single crystalline Silicon Carbide (SiC) substrate has a great potential for application in power devices. Due to silicon carbide substrate has great mechanical property and needs long processing times of manufacture. This study focuses on enhancing material removal rate of diamond lapping and Chemical Mechanical Polishing (CMP) processes of 4H single crystalline silicon carbide wafer of 2 inch and 4 inch. First, a new resin iron copper platen has been modified and hydrogen peroxide is adding in diamond slurry for the lapping process to induce 4H-SiC oxided on surface and then removing such reaction layer by diamond abrasive in lapping process. A Hybrid Energy Chemical Mechanical Polishing (HECMP) method with adjustable high oxygen concentration has been developed into CMP tool chamber gas regulating device. High oxygen content can enhance the chemical reaction and to achieve high efficiency of planarization. From experimental result, the surface had obtained reaction layer and verified by contact angle test, Vickers hardness and X-ray photoelectron spectroscopy (XPS). Efficiency of 2 inch SiC wafer of new resin iron copper platen with hydrogen peroxide can increase 17 % than normal. In HECMP, the efficiency of 2 inch SiC had raised 19 % than normal CMP. A Material Removal Rate (MRR) model of 4 inch 4H-SiC has been developed. Integration of novel diamond lapping and HECMP can reduce 29 % processing time as compared with conventional processes. Future study can focus on pilot production of 4H-SiC wafers.

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