本文使用反應式離子束濺鍍沉積法，在晶向(100)的矽基板上成長氧化鋅薄膜，觀察不同成長溫度、氧通量和基板偏壓對薄膜造成的影響。300℃時，有弱的近能隙發光和強的綠光缺陷發光；500℃時，有強的近能隙發光和弱的紅光缺陷發光。改變氧通量均能夠明顯改變缺陷面積對近能隙發光面積比、表面形貌和應力。成長溫度300℃和500℃時，氧通量為37.5%均有最小的缺陷面積對近能隙發光面積比，分別是5.3和1.5。基板加上+40 V、+80 V的偏壓時，能增強c軸取向的成長，使薄膜形成柱狀結構；基板加上讣40 V、讣80 V的偏壓時，有離子過度轟擊的現象，造成沉積率降低；正負偏壓均造成近能隙發光半高寬增加的現象。300℃時，鋅氧比約52:48，但成長溫度上升到500℃時會變成55:45，再加上正負40 V的偏壓則變成40:60，由此發現基板偏壓有能夠控制成份比的可能性。

ZnO thin films have been deposited on Si(100) substrates by reactive ion beam sputtering deposition at 300 and 500牵C. The effect of growth temperature, oxygen partial flow rate and substrate bias on the properties of ZnO thin films were investigated. ZnO deposited at both temperatures were found grown along the (002) direction while the grain size increases from 10 to 25 nm as temperature increases from 300 to 500牵C. ZnO deposited at at 300牵C shows weak near-band-edge (NBE) emission and strong defect related deep level emission centered at 2.3 eV. ZnO deposited at 500牵C shows strong NBE emission and weak defect related deep level emission centered at 1.8 eV. The ratio of integrated defect related deep level emission (Idefect) to that of integrated NBE (INBE) emission is dependent on oxygen partial flow rate that a minimum is achieved with an oxygen partial flow rate of 37.5% regardless of growth temperature. The atomic percent ratio of Zn/O is 52/48 and 55/45 for ZnO deposited at 300 and 500牵C, respectively. Applying a positive or negative 40 V bias to the substrate changes Zn/O ratio from 55/45 to 40/60, indicating the possibility of controlling the stoichiometry of the film by substrate bias. However, the added bias causes an increased amount of oxygen atoms located at oxygen deficient matrixes, likely due to the bombardment of accelerated ions.

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