在化學機械平坦化/拋光(Chemical Mechanical Planarization/ Polishing, CMP)製程中，需要鑽石修整器來維持拋光墊表面之穩定性，而拋光墊表面形貌會直接影響到晶圓表面，因此修整製程(Dressing process)後之拋光墊表面形貌對於CMP是非常重要的一環。本實驗使用三顆Pyradia鑽石修整碟所組成的108顆鑽石修整器，在其中一顆Pyradia鑽石修整碟上安裝無線力量感測器，搭配不同下壓力與轉速，對於具孔洞之拋光墊進行修整實驗。本研究為探討修整力量對於拋光墊之影響，將量測到的三軸力量換算為108顆鑽石修整器之切削力。Pyradia鑽石修整碟具有均勻的鑽石突出高度，假設每顆鑽石都能均勻的對拋光墊修整，因此將108顆鑽石修整器之切削力換算為單顆鑽石之切削力，搭配單顆鑽石修整實驗結果，以近似正交切削(Quasi-orthogonal machining)為基礎，建立鑽石修整力量模型來分析拋光墊之表面形貌。透過無溝槽拋光墊之修整實驗，建立修整力量與表面形貌之關係，再以商用x-y溝槽拋光墊，驗證鑽石修整力量模型所計算出之犁削比，最後對於銅膜晶圓進行化學機械拋光實驗，透過拋光墊表面對於銅模晶圓之影響，驗證修整力量對於拋光墊表面形貌之影響。

In the Chemical Mechanical Planarization/Polishing process, the diamond dresser is required to maintain the stability of the polishing pad surface, and the surface topography of the polishing pad will directly affect the wafer surface. Therefore, the surface topography of the polishing pad after the dressing process is more important for CMP. In order to explore the influence of dressing power on polishing pads, the measured three-axis power was converted into the cutting force of 108 diamond dressers. The Pyradia diamond disk has a uniform diamond protrusion height, assuming that each diamond can evenly dress the polishing pad. Therefore, the cutting force of 108 diamond dresser is converted into the cutting force of a single diamond, combined with the experimental results of single diamond dressing, and based on Quasi-orthogonal machining, a diamond dressing force model is established to analyze the topography of polishing pad. Through the dressing experiment of the non-groove polishing pad, the relationship between the dressing force and the surface topography was established, and then the commercial x-y groove polishing pad was used to verify the plowing ratio calculated by the single diamond dressing force model. CMP experiment was performed on copper blanket wafer, and the influence of the dressing force on the surface topography of the polishing pad was verified through the influence of the polishing pad surface on the copper blanket wafer.

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