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研究生： 葉俊樑
Chun-Liang Yeh
論文名稱： 化學束磊晶成長氮化銦薄膜與特性分析研究
Growth and Characterization of Indium Nitride Thin Films Prepared by Chemical Beam Epitaxy
指導教授： 周賢鎧
Shyankay Jou
陳貴賢
Kuei-Hsien Chen
林麗瓊
Li-Chyong Chen
口試委員: 黃鶯聲
Ying-Sheng Huang
學位類別： 碩士
Master
系所名稱： 工程學院 - 材料科學與工程系
Department of Materials Science and Engineering
論文出版年： 2005
畢業學年度： 93
語文別： 英文
論文頁數： 83
中文關鍵詞： 化學束磊晶 、薄膜 、氮化銦
外文關鍵詞： Chemical Beam Epitaxy, Thin Film, Indium Nitride
相關次數： 點閱：362  下載：1 
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  •  上一筆

    • 本研究已成長高品質氮化銦(InN)薄膜在氮化鎵(001)的基板上，利用高解離性的氮源(HN3)來當化學束磊晶技術來成長薄膜。成長薄膜特性分析儀器使用：高解析度場發射掃描電子顯微鏡(FE-SEM)、高解析度穿透電子顯微鏡(HR-TEM)、選區電子繞射(SAED)、X光繞射儀(XRD)、X-ray rocking curve(XRC)、拉曼散射光譜(RS)以及光激發光光譜(PL)。
    從高解析穿逶式電子顯微鏡及選區繞射圖的結果顯示氮化銦的高結晶性以及近乎磊晶特性，此外，在表面成長氮化銦(001)於氮化鎵(001)基板上，在沒有使用其他緩衝層狀態下，成長氮化銦薄膜呈現近乎(001)成長方向。根據實驗觀察沉積溫度以及速率會影響在氮他銦表面的形貌及成長方向。
    在這篇論文中，利用銦放在Kundsen cell (K-cell)內與氮源(HN3)來反應，近乎單一方向氮化銦薄膜的磊晶成長在氮化鎵(001)方向上基板，形成高品質氮化銦薄膜。並探討氮化銦薄膜的結構與特性分析。

    We report successful growth of high-quality indium nitride (InN) thin films on GaN(001)/sapphire (SA)(001) substrates, via chemical beam epitaxy (CBE) using highly volatile HN3 as nitrogen source reagent. Characterizations of the as-grown films have been carried out using field-emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), selected-area electron diffractometry (SAED), X-ray diffractometry (XRD), X-ray rocking curve (XRC), Raman scattering (RS) and Photoluminescence (PL). HR-TEM micrographs and SAED patterns show the high crystallinity and nearly epitaxial growth of InN. Moreover, using the GaN(001)/sapphire(001) substrate without any buffer layer, the deposited InN films exhibit nearly pure (001) out-plane orientation. The effects of deposition temperature and rate on the surface morphology and out-plane orientation have been observed and discussed.
    Objective of this thesis is to synthesize and characterize InN thin films. A nearly epitaxial InN(001) film on the GaN(001)/sapphire(001) substrates is formed by using the K-cell (In) and HN3.

    Abstract(Chinese) ……………………………………………………………………I Abstract (English)……………………………………………………………………II Acknowledgement …………………………………………………………………III Table of Contents …………………………………………………………………IV List of Figures ………………………………………………………………………VI List of Tables………………………………………………………………………XI Chapter 1 Introduction ………………………………………………………………1 1.1 History …………………………………………………………………………1 1.2 Crystalline properties ……………………………………………………………2 1.3 Electrical properties ……………………………………………………………5 1.3.1 Background defects …………………………………………………………5 1.3.2 Hall mobility and electron concentration in undoped InN ……………………5 1.4 Optical properties ………………………………………………………………8 1.5 Application ……………………………………………………………………11 1.5.1 Blue/UV light emitting diodes (LEDs) and laser diodes (LDs) ………………11 1.5.2 High-speed high-performance heterojunction field-effect transistors ………11 1.5.3 Solar cell ……………………………………………………………………12 1.6 Hydrazoic acid (HN3) …………………………………………………………14 1.7 Chemical Beam Epitaxy System (CBE) ………………………………………15 Chapter 2 Experimental section ……………………………………………………18 2.1 Growth of InN thin film using Chemical Beam Epitaxy System ………………18 2.2 Sample preparation ……………………………………………………………21 2.3 Characterization techniques ……………………………………………………22 2.3.1 X-ray diffractometer (XRD) …………………………………………………22 2.3.2 Field-Emission Scanning Electron Microscope (FE-SEM) …………………23 2.3.3 Raman spectra (RS) …………………………………………………………24 2.3.4 High-resolution transmission electron microscopy (HR-TEM) ………………25 2.3.5 X-ray rocking curve (XRC) …………………………………………………26 Chapter 3 Growth and Characterization of InN Thin Films …………………………27 3.1 The substrate temperature effect ………………………………………………27 3.1.1 Morphology …………………………………………………………………27 3.1.2 Microstructure and interface ………………………………………………30 3.1.3 X-ray diffraction ……………………………………………………………35 3.1.4 Raman Spectra ………………………………………………………………35 3.2 The K-cell temperature effect …………………………………………………38 3.2.1 Morphology …………………………………………………………………38 3.2.2 X-ray diffraction and rocking curve …………………………………………42 3.2.3 Raman Spectra ………………………………………………………………42 3.3 The HN3 flow rate effect ………………………………………………………48 3.3.1 Morphology …………………………………………………………………48 3.3.2 X-ray diffraction ……………………………………………………………51 3.3.3 Raman Spectra ………………………………………………………………51 3.4 The growth time effect …………………………………………………………54 3.4.1 Surface morphology and chemical composition ………………………………54 3.4.2 X-ray diffraction ……………………………………………………………59 3.4.3 Raman Spectra ………………………………………………………………59 3.5 Photoluminescence of InN ………………………………………………………62 3.5.1 Temperature-dependence photoluminescence ………………………………62 3.5.2 Power-dependence photoluminescence ………………………………………67 Chapter 4 Conclusion ………………………………………………………………72 References …………………………………………………………………………73 Autobiography ………………………………………………………………………81 Publications …………………………………………………………………………82

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