研究生: |
廖啟宏 Chi-Hong Liao |
---|---|
論文名稱: |
搖臂式修整於拋光墊之平坦度與接觸面積分析化學機械拋光影響研究 Analysis on Pad Uniformity and Contact Area by Swing-arm Dressing for Effects of Chemical Mechanical Planarization/Polishing |
指導教授: |
陳炤彰
Chao-Chang Chen |
口試委員: |
鄭逸琳
Yi-Lin Zheng 周大鑫 Da-Xin Zhou 莊程媐 Cheng-Xi Zhuang 蔡明義 Ming-Yi Cai |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 機械工程系 Department of Mechanical Engineering |
論文出版年: | 2023 |
畢業學年度: | 111 |
語文別: | 中文 |
論文頁數: | 120 |
中文關鍵詞: | 化學機械拋光 、搖臂式修整 、接觸面積 、模擬 、修整指標 |
外文關鍵詞: | Chemical mechanical polishing, Swing-arm dressing, Contact area, Simulation, Dressing index |
相關次數: | 點閱:346 下載:0 |
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本研究為探討搖臂式修整後拋光墊接觸面積對於CMP的影響,首先建立量測接觸面積之方法,接著探討修整與接觸面積之間的關係,利用拋光墊的粗糙度、承載面積比與接觸面積進行相關性分析,因為粗糙度與承載面積比經常是用來分析修整後拋光墊的性能指標,最後進入化學機械拋光以探討接觸面積的影響。首先接觸面積的量測方法是利用PCA-OD (Pad contact area-observation device)的玻璃晶圓對切下的拋光墊方塊表面下壓,配合雷射共軛焦顯微鏡掃描受壓時的拋光墊表面形貌以計算接觸面積。利用重疊點模擬程式模擬修整參數並利用網目分析法進行拋光墊方塊的取樣,建立修整與接觸面積之間的關係,從趨勢中顯示接觸面積值會隨著修整重疊點數的增加而趨於穩定、收斂,在ICSU-G拋光墊中顯示重疊點數大於7006,接觸面積值會達到穩定的趨勢。在相關性分析當中,ICSU-G與ICSU-GP這兩款有表面特徵的拋光墊中,Ssk、Svk對於接觸面積值呈現高度相關,應用於後續分析拋光墊表面時,當作接觸面積的評估指標。另外為了改善拋光墊在修整後的均勻度,利用面修整模擬程式配合重疊面非均勻度與重疊面變異係數指標,優化搖臂式修整的角速度,最後優化的角速度組合為1, 8, 2, 8, 7 degrees/s,優化後參數進行驗證實驗,實驗結果顯示修整區域中最大溝槽落差不超過5μm。40x40 mm2 oxide CMP,ICSU-GP的拋光結果中有較佳的晶圓非均勻度,由於修整後的接觸面積趨勢會大於ICSU-G,接著進行12-inch Oxide CMP,結果顯示優化修整秒數的C-1組也有較好的接觸面積與晶圓非均勻度。
This study aims to investigate the impact of the contact area of swing-arm dressing pad on chemical mechanical polishing/planarization (CMP). A method for measuring the contact area has been established. The measurement method for the contact area involves applying pressure on the surface of subjected coupons of dressing pad, which is obtained by PCA-OD (Pad contact area-observation device). Contact area is calculated by scanning surface of the compressed dressing pad using a laser confocal microscope. Simulation programs for overlap points are used to simulate dressing parameters and mesh analysis is employed to sample the dressing pad coupons, thereby establishing the relationship between diamond dressing process and contact area. The trends indicate that the contact area values tend to stabilize and converge as the number of overlap points of dressing process increases. In the case of ICSU-G polishing pad, contact area values stabilize when the number of overlap points exceeds 7006. In the correlation analysis, ICSU-G and ICSU-GP pads show a high correlation between Ssk and Svk values and the contact area. The angular velocity of swing-arm dressing is optimized, and the resulting optimized combination of angular velocities is 1, 8, 2, 8, 7 degrees/s. Results of validated experiment using the optimized parameters showed that the maximum groove depth difference within the dressing region didn’t exceed 5 μm. In the 40x40 mm2 of blanket coupon wafer Oxide CMP, polishing results with ICSU-GP pad exhibit better wafer non-uniformity. Subsequently, in the 12-inch oxide CMP, results show that the C-1 which has optimized dressing duration, exhibits better contact area and oxide wafer non-uniformity.
[1] 蕭宏, 半導體製程技術導論. 全華圖書股份有限公司, 2014.
[2] 薛慶堂, 化學機械拋光之拋光墊性能分析與平坦化加工研究. 碩士論文, 機械工程系, 國立臺灣科技大學, 2011.
[3] 黃星豪, 藍寶石晶圓拋光加工之摩擦力與拋光墊機械性質分析研究. 碩士論文, 機械工程系, 國立臺灣科技大學, 2013.
[4] 陳鈺庭, 拋光墊修整磨合期對銅膜晶圓化學機械拋光影響研究. 碩士論文, 機械工程系, 國立臺灣科技大學, 2014.
[5] 溫禪儒, 單晶矽與藍寶石晶圓化學機械平坦化之拋光墊有效壽命指標分析研究. 碩士論文, 機械工程系, 國立臺灣科技大學, 2014.
[6] Ming-Yi Tsai, Shun-Tong Chen, Yunn-Shiuan Liao, James Sung. Novel diamond conditioner dressing characteristics of CMP polishing pad. International Journal of Machine Tools and Manufacture, 2009, 49.9: 722-729.
[7] Boris Vasilev, Sascha Bott, Roland Rzehak, Johann W. Bartha. Pad roughness evolution during break-in and its abrasion due to the pad-wafer contact in oxide CMP. Microelectronic Engineering, 2013, 111: 21-28.
[8] 陳冠中, 軟韌性聚氨酯拋光墊之鑽石修整加工分析研究. 軟韌性聚氨酯拋光墊之鑽石修整加工分析研究, 2014.
[9] 李奕廷, 單點鑽石刀具近似正交切削軟韌彈性墊之研究. 碩士論文, 機械工程系, 國立臺灣科技大學, 2017.
[10] 李梓豪, 交叉多角度單顆鑽石修整軟韌彈性墊之研究. 碩士論文, 機械工程系, 國立臺灣科技大學, 2018.
[11] 王澤源, 多顆鑽石修整軌跡於軟韌性聚氨酯拋光墊之模擬分析研究. 碩士論文, 機械工程系, 國立臺灣科技大學, 2019.
[12] 許仕忠, 拋光墊之修整力量分析與銅膜晶圓化學機械拋光影響研究. 碩士論文, 機械工程系, 國立臺灣科技大學, 2020.
[13] 楊賴友, 多顆鑽石修整軌跡於軟韌性聚氨酯拋光墊之模擬分析研究. 碩士論文, 機械工程系, 國立臺灣科技大學, 2021.
[14] 宋政潮, 化學機械平坦化之行星式及搖臂式動態模型對拋光墊修整分析與影響研究. 碩士論文, 機械工程系, 國立臺灣科技大學, 2022.
[15] Hyunseop Lee, Sangjik Lee. Investigation of pad wear in CMP with swing-arm conditioning and uniformity of material removal. Precision Engineering, 2017. 49: p. 85-91.
[16] Chao-Chang Chen and Quoc-Phong Pham. Study on diamond dressing for non-uniformity of pad surface topography in CMP process. The International Journal of Advanced Manufacturing Technology, 2017. 91:p. 3573-3582.
[17] Aniruddh J. Khanna, Puneet Jawali, Daniel Redfield, Raghava Kakireddy, Ashwin Chockalingam, Dominic Benvegnu, Mo Yang, Sebastian Rozo, Jason Fung, Mario Cornejo, Igor Abramson, Mayu Yamamura, Zhibo Yuan, Rajeev Bajaj. Methodology for pad conditioning sweep optimization for advanced nodes. Microelectronic Engineering, 2019. 216: 111101.
[18] 李人傑, 運用動態量測系統進行拋光墊之修整模型建立與線上量測分析研究. 碩士論文, 機械工程系, 國立臺灣科技大學, 2021.
[19] Ting Sun, Len Borucki, Yun Zhuang, Yasa Sampurno, Fransisca Sudargho, Xiaomin Wei1, Sriram Anjur and Ara Philipossian. Investigating effect of conditioner aggressiveness on removal rate during interlayer dielectric chemical mechanical planarization through confocal microscopy and dual emission ultraviolet-enhanced fluorescence imaging. Japanese Journal of Applied Physics, 2010, 49.2R: 026501.
[20] Changsuk Lee, Hojun Lee, Moonki Jeong and Haedo Jeong. A study on the correlation between pad property and material removal rate in CMP. International Journal of Precision Engineering and Manufacturing, 2011, 12: 917-920.
[21] Norikazu Suzuki, Hirotaka Misono, Eiji Shamoto, Yohei Hashimoto, Hozumi Yasuda , Yoshihiro Mochizuki. Material removal efficiency improvement by orientation control of CMP pad surface asperities. Precision Engineering, 2020, 62: 83-88.
[22] Quoc-Phong Pham and Chao-Chang Chen. Study on pad cutting rate and surface roughness in diamond dressing process. International Journal of Precision Engineering and Manufacturing, 2017. 18(12): p. 1683-1691.
[23] ISO 25178-2:2012 Geometrical Product Specifications (GPS) -124 Surface texture: Areal, Part1: Terms, definitions and surface texture parameters.