本研究為探討搖臂式修整後拋光墊接觸面積對於CMP的影響，首先建立量測接觸面積之方法，接著探討修整與接觸面積之間的關係，利用拋光墊的粗糙度、承載面積比與接觸面積進行相關性分析，因為粗糙度與承載面積比經常是用來分析修整後拋光墊的性能指標，最後進入化學機械拋光以探討接觸面積的影響。首先接觸面積的量測方法是利用PCA-OD (Pad contact area-observation device)的玻璃晶圓對切下的拋光墊方塊表面下壓，配合雷射共軛焦顯微鏡掃描受壓時的拋光墊表面形貌以計算接觸面積。利用重疊點模擬程式模擬修整參數並利用網目分析法進行拋光墊方塊的取樣，建立修整與接觸面積之間的關係，從趨勢中顯示接觸面積值會隨著修整重疊點數的增加而趨於穩定、收斂，在ICSU-G拋光墊中顯示重疊點數大於7006，接觸面積值會達到穩定的趨勢。在相關性分析當中，ICSU-G與ICSU-GP這兩款有表面特徵的拋光墊中，Ssk、Svk對於接觸面積值呈現高度相關，應用於後續分析拋光墊表面時，當作接觸面積的評估指標。另外為了改善拋光墊在修整後的均勻度，利用面修整模擬程式配合重疊面非均勻度與重疊面變異係數指標，優化搖臂式修整的角速度，最後優化的角速度組合為1, 8, 2, 8, 7 degrees/s，優化後參數進行驗證實驗，實驗結果顯示修整區域中最大溝槽落差不超過5μm。40x40 mm2 oxide CMP，ICSU-GP的拋光結果中有較佳的晶圓非均勻度，由於修整後的接觸面積趨勢會大於ICSU-G，接著進行12-inch Oxide CMP，結果顯示優化修整秒數的C-1組也有較好的接觸面積與晶圓非均勻度。

This study aims to investigate the impact of the contact area of swing-arm dressing pad on chemical mechanical polishing/planarization (CMP). A method for measuring the contact area has been established. The measurement method for the contact area involves applying pressure on the surface of subjected coupons of dressing pad, which is obtained by PCA-OD (Pad contact area-observation device). Contact area is calculated by scanning surface of the compressed dressing pad using a laser confocal microscope. Simulation programs for overlap points are used to simulate dressing parameters and mesh analysis is employed to sample the dressing pad coupons, thereby establishing the relationship between diamond dressing process and contact area. The trends indicate that the contact area values tend to stabilize and converge as the number of overlap points of dressing process increases. In the case of ICSU-G polishing pad, contact area values stabilize when the number of overlap points exceeds 7006. In the correlation analysis, ICSU-G and ICSU-GP pads show a high correlation between Ssk and Svk values and the contact area. The angular velocity of swing-arm dressing is optimized, and the resulting optimized combination of angular velocities is 1, 8, 2, 8, 7 degrees/s. Results of validated experiment using the optimized parameters showed that the maximum groove depth difference within the dressing region didn’t exceed 5 μm. In the 40x40 mm2 of blanket coupon wafer Oxide CMP, polishing results with ICSU-GP pad exhibit better wafer non-uniformity. Subsequently, in the 12-inch oxide CMP, results show that the C-1 which has optimized dressing duration, exhibits better contact area and oxide wafer non-uniformity.

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