本研究延續蔡明城開發之動態量測拋光墊性能指標系統，透過彩色共軛焦感測器架設於CMP機台上，利用拋光機盤面旋轉與搖臂搖擺達到拋光墊大面積掃描，利用自製軟體分析其表面訊號，計算拋光墊非均勻度(PU)、壽命指標(PELI)、承載比(Bearing Area Ratio)以及表面粗糙度。研究方法之實驗A進行拋光機台工作頻率量測，濾除3Hz與40~50Hz之工作頻率，避免訊號干擾拋光墊指標計算。實驗B1為動態乾、濕式拋光墊馬拉松量測，當拋光盤面轉速大於40 rpm時，掃描軌跡分布與拋光墊性能指標乾濕式分析誤差小於10%。實驗B2為銅膜晶圓的馬拉松實驗評估修整參數，選用2 psi 修整參數，在馬拉松實驗可達到PU大於50%與PELI小於50%。實驗C1在無修整的條件下拋光30片銅膜晶圓，其材料移除率、非均勻性與表面粗糙度對於承載比中的反應區(Rpk)分別具有高度(0.91)、中度(0.68)與高度(-0.81)相關性指標。實驗C2由實驗B2得到之參數固定修整參數進行拋光150片銅膜晶圓的馬拉松實驗，得銅膜晶圓的材料移除率對於承載比中的傳輸區(Rk)、PELI與PU分別具有高度(0.87)、高度(0.94)和高度(-0.94)相關性指標。此套系統能動態量測拋光墊表面形貌變化，並分析與晶圓指標之相關性，未來可將此系統應用於拋光製程調控最佳化。

This study is to improve a dynamic pad monitoring system (DPMS) developed by Ming-Cheng Tsai. Chromatic confocal sensor attaches on a swing dressing arm in Chemical Mechanical Polishing (CMP) tool. Dynamic scan of polishing pad is performed by a rotary motion of polishing platen and the swing motion of dressing arm. The surface signal has been analyzed by developed software to calculate pad uniformity (PU), pad efficiency lifetime index (PELI), bearing area ratio (BAR) and surface roughness. Experiment A is to measure the working frequency of the HAMAI polishing machine and filter the working frequency. Experiment B1 is to dynamically measure pad surface in dry and wet condition as well as compare with pad performance index. Results show that pad performance index error is less than 10% when the platen rotation speed is 40 rpm. Experiment B2 is to achieve PU change it larger than 50% and PELI less than 50%, and the dresser down force with 2 psi. Experiment C1 is a marathon CMP of 30 pieces of copper blanket wafers without dressing pad. It indicates that MRR and NU are highly related to Rpk. Experiment C2 is to conduct a marathon experiment of polishing 150 copper film wafers with fixed parameters. It is obvious that MRR, Sa and N.U. are highly related to PU and PELI as well as MRR is highly related to Rk. Results of the study show that DPMS can monitor the change of pad profile, which are correlated with wafer quality by CMP. Such results can use topography to predict pad life time and also can be further applied on Cu-CMP process control in CMP process.

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