本論文探討將三五族雷射與矽光子積體電路進行複合積體化的兩項關鍵技術：一為研究晶片黏合，另一則為使用晶圓代工廠製作雷射的特性與可行性分析。晶片黏合是利用二乙烯基矽氧烷-雙苯並環丁烯 (DVS-BCB)緊密黏合具有圖案結構的矽晶片，以模擬使用有元件結構的矽光子晶片，並達到以超薄DVS-BCB完成晶片黏合的目標。雷射陣列部分則以研發溫度調控多波長雷射陣列的效能為載具，評估雷射結構與材料作為複合光電積體化的可行性。
以不同DVS-BCB旋塗速度探討晶片黏合介質的厚度變化，並使用氫氧化鉀與異丙酮混合液蝕刻矽晶片成具有光滑表面的脊狀結構，晶片黏合後使用冷鑲埋將晶片直立固定，這使晶片能夠直立研磨、拋光，讓劈裂斷面平滑，在電子顯微鏡下的量測距離更加準確。期望藉由增加旋塗速度達到較小的黏合間距，以實現積體光路。本論文實現100奈米以下之BCB黏合間距，最小間距達到20奈米。
多波長分布反饋雷射陣列經委託晶圓代工製作後，量測溫度對雷射陣列光譜、光功率及串擾的影響，證實以此材料及方法製作的雷射陣列可以有相當好的效能。多波長分布反饋雷射陣列平均閥值11.38毫安培，旁模抑制比達到50 dB，在90毫安培時平均功率達到23.2毫瓦。為改善散熱效果以降低熱串擾， 將雷射陣列與合光器封裝在一起，並分析封裝前與封裝後之雷射陣列之光頻譜圖、相對雜訊、光功率及串擾特性， 證實封裝後的分布反饋雷射陣列有更好的元件特性。

This thesis investigates two key technologies related to the hybrid pho-tonic integration of III-V semiconductor lasers with silicon photonic in-tegrated circuits. One is to develop the chip-bonding technology, and the other is to investigate the feasibility of manufacturing the semiconductor lasers with foundry services. The final goal is to use the chip bonding technique to combine the foundry-made III-V semiconductor laser with silicon photonic integrated circuits.
The chip-bonding is conducted by using DVS-BCB (Divinylsilox-ane-bis-benzocyclobutene) to bond silicon chip with another patterned silicon chip. We use KOH and IPA mixed solution to realize patterned silicon substrate. Different speeds to spin the BCB on the patterned chip are tested to achieve thin adhesive layer between the bonded chips. After chip bonding, we use epoxy resin to fix the chip and then lap and polish the chips perpendicular. This procedure allows to measure the thickness of the adhesive layer. We expect to reduce the BCB thickness between the smooth and patterned silicon chips by increasing the spinning speed. We achieve the thickness of BCB below100 nm, and the minimal thickness is around 20 nm.
The fabrication of lasers with foundry model is evaluated by using the thermally-tuned multi-wavelength DFB laser arrays as the carriers. We measure the temperature tuning characteristics of DFB laser array. The laser arrays have average threshold current of 11.38 mA, SMSR of 50 dB, and optical output power of 23.2 mW at 90mA of injection current. The lasers can have excellent output power and optical spec-trum characteristics when the lasers are tuned from 20 to 60 oC. By comparing the performance of the DFB laser arrays before and after packaging, the thermal crosstalk can be greatly reduced after packaging due to better heatsink.

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