研究生: |
王琬瑄 Wan-Hsuan Wang |
---|---|
論文名稱: |
以奈米壓印微影技術研製氮化鎵分佈回饋式雷射 Process development on fabricating GaN-based distributed feedback lasers using nanoimprint lithography |
指導教授: |
葉秉慧
Pinghui Sophia Yeh |
口試委員: |
徐世祥
Shih-Hsiang Hsu 何清華 Ching-Hwa Ho 柯正浩 Kevin Cheng-Hao Ko |
學位類別: |
碩士 Master |
系所名稱: |
電資學院 - 光電工程研究所 Graduate Institute of Electro-Optical Engineering |
論文出版年: | 2015 |
畢業學年度: | 103 |
語文別: | 中文 |
論文頁數: | 98 |
中文關鍵詞: | 分佈回饋式雷射 、奈米壓印微影 |
外文關鍵詞: | distributed feedback lasers, DFB laser, nanoimprint lithography |
相關次數: | 點閱:201 下載:5 |
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氮化鎵材料生長在藍寶石基板難以劈裂,本論文研究以非劈裂式方法製作邊射型雷射共振腔反射面,用黃光微影與乾式蝕刻定義出共振腔的區域,並以奈米壓印微影技術取代電子束微影技術製作氮化鎵分佈回饋式雷射的光柵結構,由於奈米壓印微影技術僅需先使用電子束微影技術製作出模具,即可以複製壓印的方式多次且快速地製作出奈米等級的結構,降低所需的時間與成本。
本實驗的奈米壓印尚未成功製作出氮化鎵分佈回饋式雷射的光柵結構,由掃描式電子顯微鏡結果來看,約有二種週期性的排列,研判大週期性的排列是由空氣產生的,由於本實驗使用的奈米壓印機台操作環境為非高真空環境,介面空氣在壓印過程難以排出,導致出現大週期性的非光柵壓印痕跡的排列,但在大週期之間,有成功壓印出光柵週期,但對比於空氣造成的大週期壓印痕跡過於淺,以至於後續蝕刻無法有效達到所需的光柵週期。
雖然本實驗沒有成功製作出氮化鎵分佈回饋式雷射的光柵結構,但透過I-V&L-I量測系統,並配合CCD作影像觀察,元件的電性量測結果皆在合理的範圍內,寬度愈小的元件相同電流下出光功率愈大。
GaN-based material grown on sapphire substrate is hard to cleave a laser facet. This study used non-cleaving approach to produce reflectors for edge-emitting laser. Photolithography and dry etching were used to define the area of a resonator. And nanoimprint lithography (NIL) instead of traditional electron beam lithography was utilized to produce a grating structure on top of a gallium nitride epitaxial wafer for making a distributed feedback laser. NIL manufacturing only require a previously made mold by using electron beam lithography and use the mold to imprint repeatedly and quickly to produce nano-level structure, reducing time and cost.
The nanoimprint experiment did not successfully produce a grating structure for gallium nitride based distributed feedback laser. From the results of scanning electron microscope imaging, we observed two kinds of periodic structures of which the one with an unwanted period was likely generated by the interface air between the mold and imprinted material. Because the nanoimprint machine was not operated in a high vacuum environment, it was difficult to exile the interface air during imprinting. In between the unwanted periodic structure, there appeared a grating with a correct period but of shallow depth, so that subsequent etching can not be performed.
Although this study has not yet successfully fabricated a grating structure for gallium nitride based distributed feedback laser, the devices’ electro-luminance characteristics such as I-V & L-I curves and CCD images were reasonably good. Moreover, diodes with smaller width exhibited larger optical power under the same injection current as expected.
[1] G. Bhuiyan, K. Sugita, K. Kasashima, A. Hashimoto, A. Yamamoto, and V. Y. Davydov, " Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy," Applied Physics Letters, vol. 84, pp. 452, 2004.
[2] E. Fred. Schubert, "Light emitting diode," Cambridge University Press, New York, 2006.
[3] H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, "P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)," Japanese Journal of Applied Physics, vol. 28, pp. L2112-L2114, 1989.
[4] I. Akasaki, H.Amano, K. Koide, and K. Manabe, "GaN based UV/blue light-emitting devices," Inst. Phys. Conf. Ser., vol.129, pp.851-856, 1992.
[5] S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, "Thermal Annealing Effects on P-Type Mg-Doped GaN Films," Japanese Journal of Applied Physics, vol. 31, pp. L139-L142, 1992.
[6] S. Nakamura, M. Senoh, and T. Mukai, "High‐power InGaN/GaN double‐heterostructure violet light emitting diodes," Japanese Journal of Applied Physics, vol. 62, pp.2390-2392, 1993.
[7] I. Akasaki, H. Amano, S. Sota, H. Sakai, T. Tanaka and M. Koike, "Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device," Japanese Journal of Applied Physics, 34 L1517, 1995.
[8] S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, "InGaN-Based Multi-Quantum-Well-Structure Laser Diodes," Japanese Journal of Applied Physics, 35 L74, 1996.
[9] S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, "Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime," Appl. Phys. Lett, 69, 4056, 1996.
[10] S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T.Kozaki, H. Umemoto, M. Sano, K. Chocho, "InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate," Appl. Phys. Lett, 72, 211, 1998.
[11] R. Hofmann, V. Wagner, H.-P. Gauggel, F. Adler, P. Ernst, H. Bolay, A. Sohmer, F. Scholz, and H. C. Schweizer, "Realization and Characterization of Optically Pumped GaInN–GaN DFB Lasers," IEEE Journal of Selected Topics in Quantum Electponics, vol.3, No.2, April 1997.
[12] R. Hofmann , V. Wagner, M. Neuner, J. Off, F. Scholz, H. Schweizer, "Optically pumped GaInN:GaN-DFB lasers: overgrown lasers and vertical modes," Materials Science and Engineering, B59, 386–389, 1999.
[13] D. Hofstetter, R.L. Thornton, L.T. Romano, D.P. Bour, M. Kneissl, R.M. Donaldson and C. Dunnrowicz, "Characterization of InGaN/GaN-based multi-quantum well distributed feedback lasers," Materials Research Society, Volume 537, 1999.
[14] R. Werner, M. Reinhardt, M. Emmerling, A. Forchel, V. Härle, A. Bazhenov, "High-resolution patterning and characterization of optically pumped first-order GaN DFB lasers," Physica E: Low-dimensional Systems and Nanostructures, Volume 7, Issues 3–4, Pages 915–918, May 2000.
[15] S. Masui, K. Tsukayama, T. Yanamoto, T. Kozaki, S.-I. Nagahama and T. Mukai, "First-Order AlInGaN 405 nm Distributed Feedback Laser Diodes by Current Injection," Japanese Journal of Applied Physics, 45 L749, 2006.
[16] S. Masui, K. Tsukayama, T. Yanamoto, T. Kozaki, S.-I. Nagahama and T. Mukai, "CW operation of the first-order AlInGaN 405 nm distributed feedback laser diodes," Japanese Journal of Applied Physics, 45 L1223, 2006.
[17] S. Masui, K. Tsukayama, T. Yanamoto, T. Kozaki, S.-I. Nagahama and T. Mukai, "Characterization of AlInGaN-based 405nm distributed feedback laser diodes," SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090G, January 29, 2008.
[18] 盧廷昌、王興宗,半導體雷射技術,五南圖書,台北,2010。
[19] 葉秉慧、余孟純、林家煥、黃景勤,“一種以矽擴散型電流阻擋層製作氮化鎵垂直共振腔面射型發光元件的方法”,中華民國與美國發明專利申請中。
[20] A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. N. Mohammad, "Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n-type GaN," Journal of Applied Physics, vol. 93, pp. 1087-1094, 2003.
[21] Z. Z. Chen, Z. X. Qin, C. Y. Hu, X. D. Hu, T. J. Yu, Y. Z. Tong, et al., "Ohmic contact formation of Ti/Al/Ni/Au to n-GaN by two-step annealing method," Materials Science and Engineering: B, vol. 111, pp. 36-39, 2004.
[22] 甯榮椿,「使用感應耦合店將反應式離子蝕刻系統蝕刻氮化矽與氮化鈦:選擇比研究SC1溶液對氮化鈦濕蝕刻速率研究」,國立清華大學材料科學與工程學系碩士學位論文,新竹,2010。
[23] T. Mattila and R. M. Nieminen, "Point-defect complexes and broadband luminescence in GaN and AlN," Physical Review B, vol. 55, pp. 9571-9576, 1997.
[24] 林智仁, 場發式掃描式電子顯微鏡簡介, 工業材料雜誌, 181 期
[25] S. Y. Chou, P. R. Krauss1 and P. J. Renstrom1, "Imprint of sub‐25 nm vias and trenches in polymers, " Appl. Phys. Lett, 67, 3114, 1995.
[26] S. Y. Chou, P. R. Krauss1 and P. J. Renstrom1, "Nanoimprint lithography, " J. Vac. Sci. Technol. B 14, 4129, 1996.
[27] S. Y. Chou, P. R. Krauss1 and P. J. Renstrom1, "Imprint Lithography with 25-Nanometer Resolution," Science, New Series, Volume272, Issue 5258, 85-87, April 5 1996.
[28] S. Y. Chou, P. R. Krauss1 and P. J. Renstrom1, "Sub-10 nm imprint lithography and applications," J. Vac. Sci. Technol. B 15, 2897, 1997.
[29] C. Perret, C. Gourgon, F. Lazzarino, J. Tallal, S. Landis, R. Pelzer, "Characterization of 8-in. wafers printed by nanoimprint lithography," Microelectronic Engineering, 73–74, 172–177, 2004.
[30] Li, L. Chen, W. Zhang, S. Y. Chou, "Pattern transfer fidelity of nanoimprint lithography on six-inch wafers," Nanotechnology, 14, 33, 2003.
[31] "10 Emerging Technologies That Will Change the World," MIT Technology Review, February 2003.
[32] J. Haisma, M. Verheijen, K. V. D. Heuvel, J. V. D. Berg, "Mold-assisted nanolithography: A process for reliable pattern replication," Journal of Vacuum Science and Technology B, 14, 412-4128, 1996.
[33] M. Colburn, S. C. Johnson, M. D. Stewart, S. Damle, T. C. Bailey, B. Choi, M. Wedlake, T. B. Michaelson, S. V. Sreenivasan, J. G. Ekerdt, C. G. Willson, "Step-and-flash imprint lithography: A new approach to high resolution patterning," Proc. Of SPIE, 379-389, 3676, 1999.
[34] S. Y. Chou, C. Keimel, J. Gu, "Ultrafast and direct imprint of nano-structures in silicon," Nature, 835-837, 417, 2002.
[35] A. Kumar, G. M. Whitesides, "Features of gold having micrometer to centimeter dimensions can be formed through a combination of stamping with an elastomeric stamp and an alkanethiol ‘ink’ followed by chemical etching," Applied Physics Letters, 2002-2004, 63, 1996.
[36] 余孟純,「氮化鎵垂直共振腔面射型光源之製造與特性量測」,國立台灣科技大學電子工程所碩士學位論文,台北,2014。