氧化石墨烯複合式拋光液於單晶碳化矽晶圓之化學機械拋光製程分析研究

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研究生：	林妤靜 Yu-Jing Lin
論文名稱：	氧化石墨烯複合式拋光液於單晶碳化矽晶圓之化學機械拋光製程分析研究 Analysis on Compound Slurry with Graphene Oxide for Chemical Mechanical Polishing of Single Crystalline Silicon Carbide Wafer
指導教授：	陳炤彰 Chao-Chang Chen
口試委員:	林士傑 Shih-Chieh Lin 趙崇禮 Chao-Choung Lii 劉顯光 Hsien-Kuang Liu 郭俞麟 Yu-Lin Kuo 陳炤彰 Chao-Chang Chen
學位類別：	碩士 Master
系所名稱：	工程學院 - 機械工程系 Department of Mechanical Engineering
論文出版年：	2019
畢業學年度：	107
語文別：	中文
論文頁數：	194
中文關鍵詞：	單晶碳化矽晶圓、氧化石墨烯、複合式拋光液、氣液輔助化學機械拋光
外文關鍵詞：	4H-SiC Wafer, Graphene Oxide, Compound-Slurry, GLACMP
相關次數：	點閱：369 下載：1
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單晶碳化矽晶圓(Silicon Carbide, SiC)在高功率元件裡相較於單晶單化矽(Silicon)具有高崩潰電壓高寬能隙、高崩潰電壓及高熱傳導率，然而單晶碳化矽具有高硬度(Mohs 9.2)硬脆基板，在傳統化學機械拋光(Chemical Mechanical Polishing, CMP)製程時間長並且耗材成本高，以降低加工時間為目標而進行探討。以不同基底之拋光液針對4H-SiC來進行30分鐘浸泡實驗，在拉曼光譜分析中添加0.1wt%GO粉末C-face產生COOH與C-O-OH鍵結，而Si-face則無明顯反應。本研究以複合式拋光液(Compound-Slurry Chemical Mechanical Polishing, CSCMP)添加0.1 wt%氧化石墨烯(Graphene Oxide, GO)與氣液輔助化學機械拋光(Gas Liquid Assisted Chemical Mechanical Polishing, GLA-CMP)結合使拋光液中OH基、COOH基與含氧之鍵結快速的與碳化矽表面產生軟質之鈍化層，達到高效率之拋光製程。研究方法先以四種不同之拋光製程相同參數對16 mm×16 mm單晶碳化矽進行C-face與Si-face拋光，其中CS+GLACMP製程具有最佳移除率，其C-face最佳之移除率為1289.91 nm/h；Si-face最佳之移除率為267.72 nm/h。最後以兩吋單晶碳化矽單面研光後應用CS+GLACMP製程比較傳統CMP整合後之加工效率，本論文所提出整合的方法，單晶碳化矽C-face拋光可降低60.6 %的製程時間;單晶碳化矽Si-face拋光可降低39.5 %的製程時間，達成降低製程時間之目標。

Single Crystalline Silicon Carbide (SiC) Wafer has high and wide voltage, high breakdown voltage, and high thermal conductivity properties in high power devices. However, it has a very high Mohs hardness 9.2 and brittle substrate, which is a time-consuming process in the traditional chemical mechanical polishing (CMP). A 30 minutes dipping test was performed on 4H-SiC with different base slurry, and 0.1 wt% GO powder add in C -face produce COOH and C-O-OH bonds, while Si-face had no obvious reaction by Raman spectroscopy. This study aims to improve the process time by Compound-Slurry Chemical Mechanical Polishing (CSCMP) add 0.1 wt% graphene oxide (GO) and Gas Liquid Assisted Chemical Mechanical Polishing (GLA-CMP). The process contains OH and COOH bonding to form a soft passivation layer on 4H-SiC wafer surface in the slurry. Four kinds of polishing processes for C-face and Si-face of SiC wafer with the same parameters. It can achieve the best material removal rate (MRR) is 1289.91 nm/ h on C-face and the best MRR is 267.72 nm/h on Si-face by the HS+GLACMP process. Comparision of CMP and CS+GLACMP, it reduces 60.6% processing time on C-face and reduce 39.5 % processing time on Si-face after single side lapping and reduce processing time.

目錄
摘要            I
Abstract            II
致謝            III
目錄            IV
圖目錄            VIII
表目錄            XV
符號表            XX
第一章 緒論    1
1    研究背景    1
2    研究目的與方法    3
3    論文架構    5
第二章 文獻回顧    7
1    單晶碳化矽基板    7
2    單晶碳化矽基板CMP製程    12
3    單晶碳化矽基板CMP拋光液    20
4    石墨烯/氧化石墨烯相關文獻    25
4.1    石墨烯性質介紹    25
4.2    石墨稀發展    26
5    氣體輔助化學機械拋光製程設備相關專利    28
6    文獻回顧總結    31
第三章 複合式拋光液CMP製程介紹    32
1    氧化石墨烯拋光液製備    32
2    氣體輔助複合式拋光液化學機械拋光    34
3    化學液基本量測    37
3.1    研光液    37
3.2    拋光液    39
4    Dipping Test靜態浸泡實驗    44
4.1    接觸角量測    45
4.2    維克式硬度量測    50
4.3    拉曼光譜量測分析    52
4.4    小結    55
第四章 實驗規劃與設備    56
1    實驗規劃    56
1.1    16×16 mm單晶4H-SiC基板不同拋光製程分析(實驗  A)    60
1.2    16×16 mm單晶4H-SiC基板化學機械拋光(實驗B)    64
1.3    兩吋單晶4H-SiC平坦化分析(實驗C)    71
2    實驗設備    73
2.1    M15-PVS 密閉式拋光機    74
2.2    M-15P 研磨拋光機    75
2.3    HAS-9 拋光液溫控攪拌系統    76
3    量測設備    77
第五章 實驗結果與討論    78
1    不同製程與4H-SiC晶圓影響分析(實驗A)    79
1.1    製程試驗設定    79
1.2    以去離子水為基底之拋光液拋光    81
1.2.1    4H-SiC C-face之CMP與CSCMP拋光效益            81
1.2.2    4H-SiC Si-face之CMP與CSCMP拋光效益            84
1.3    以商用拋光液為基底之拋光液拋光效果    87
1.3.1    4H-SiC C-face之CMP與CSCMP拋光效益            87
1.3.2    4H-SiC Si-face之CMP與CSCMP拋光效益            90
1.4    加入氣液輔助化學機械拋光製程之拋光效益    93
1.4.1    D.I.W.基底拋光液之C-face實驗驗證結果    93
1.4.2    D.I.W.基底拋光液之Si-face實驗驗證結果    97
1.4.3    DSC0901基底拋光液之C-face實驗驗證結果            101
1.4.4    DSC0902基底拋光液之Si-face實驗驗證結果            105
1.5    小結    109
2    16 mm×16 mm化學機械拋光製程參數試驗(實驗B)    110
2.1    化學機械拋光參數設置    110
2.2    不同參數對於單晶4H-SiC C-face影響    112
2.3    不同參數對於單晶4H-SiC Si-face影響    118
2.4    4H-SiC CMP材料移除模型    124
2.5    小結    130
3    兩吋單晶4H-SiC製程整合分析(實驗C)    131
3.1    兩吋4H-SiC晶圓製程參數設定    131
3.2    研光與拋光製程之次表層裂縫量測    133
3.3    兩吋單晶4H-SiC CMP與CS+GLACMP製程效益分析    137
3.4    小結    141
4    綜合結果與討論    142
第六章 結論與建議    143
1    結論    143
2    建議    144
參考文獻            145
附錄 A    量測設備    149
附錄 B    實驗耗材    152
B-1    研光盤    152
B-2    拋光墊    153
附錄 C    單晶4H-SiC表面粗糙度    154
附錄 D    二氧化矽與氧化石墨烯奈秒雷射之4H-SiC C-faceCMP製程    168



                                

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