在化學機械平坦化製程中，化學拋光液與晶圓移除之殘碎會導致拋光墊表面產生鈍化的情況，因此透過拋光墊修整將拋光墊表面已鈍化表面移除，維持穩定的晶圓移除率。本研究將探討修整力量下的拋光墊修整移除率與表面形貌，本研究主要分為三個部分。首先利用單顆鑽石於拋光墊壓痕實驗計算出不同力量下的鑽石有效切深，並以鑽石切削長度與鑽石有效切深來模擬拋光墊修整移除率，透過不同下壓力於IC1000拋光墊進行修整實驗來驗證模擬結果。實驗結果顯示，實際修整移除率與模擬結果之趨勢一致。接著透過修整重疊點數與拋光墊表面粗糙度之關係，建立修整時間之評估指標。從實驗結果顯示，當微小區域之重疊點數高於600時，拋光墊表面粗糙度呈現穩定的趨勢。最後藉由修整移除率與拋光墊粗糙度建立修整均勻性指標，透過此指標來優化修整參數。實驗結果顯示，優化後的修整參數能產生較均勻的修整移除率分布與拋光墊表面粗糙度，拋光墊均勻性優化了30%，並可減少17%的修整時間。研究成果可得到拋光墊修整最佳參數和修整時間，未來可應用於高效率CMP製程。

In chemical mechanical planarization (CMP), the pad surface could be deteriorated by glazing from slurry and debris removed from the wafer. Therefore, the glazed layer is necessary to be removed by pad dressing and maintained stability material removal rate (MRR) of wafer. This study focuses on pad cutting rate (PCR) and pad topography with different dressing force on polyurethane pad. This study is divided into three parts. First, the effective cutting depth of diamond with different load can be calculated by a single diamond indentation experiment. The simulation of PCR is based on cutting length and effective cutting depth of diamond. Simulation results of PCR have been verified by dressing experiment with different down pressure on IC1000 pad. Experimental results are consistent with simulation results. Second, the evaluative criteria of dressing time are based on relationship between overlap dressing number and pad roughness. According to experimental results, pad surface roughness can achieve steady state when the overlap dressing number are up to 600. Finally, dressing uniformity indexes are established by distribution of PCR and pad roughness. The dressing parameters can be optimized by these index. From experimental results, uniform distribution of PCR and pad roughness can be generated by optimized parameters. The pad uniformity is improved 30 % and dressing time is decreased 17 % with optimized parameters. Results can be used to evaluate the optimized dressing parameters and dressing time for high efficient CMP process.

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