本研究為在低溫製程下試圖將非晶矽轉換成多晶矽，多晶矽薄膜的形成方式眾多，直接沉積型的有化學氣相沉積法，或是再結晶型的包含固相結晶法、準分子雷射在結晶法、鋁誘發法等等，但大多都需要搭配高溫的製程。為了能在軟板上做應用勢必要降低製程溫度，本實驗使用鋁誘發結晶法於非晶矽薄膜中，經過200℃的加熱退火後使非晶矽轉換成多晶矽，透過不同氫化程度的氫化非晶矽、自組裝單分子薄膜在基板上的改質來達到在低溫誘發的目標。
在詳細的實驗過程中，發現了經過聚集APTES-SAM修飾的基板再濺鍍完矽薄膜後即可以從拉曼光譜儀偵測到多晶矽的結晶訊號，沒有經過鋁誘發的轉化即產生效果，觀察到了不一樣的轉化途徑。雖然此法效果可能不如鋁誘發結晶法好，本研究會試圖探討出合邏輯的機制以解釋此現象。

In this research, we focus on how to transfer amorphous silicon (a-Si) to poly-crystalline Si (poly-Si). There are many methods to fabricate poly-Si on glass substrate. Chemical vapor depostition can directly deposit poly-Si on heterogeneous substrate. Solid phase crystallization (SPC), Excimer laser crystallization (LC), Metal induced crystallization (MIC) can recrystallize a-Si film to poly Si film by giving secondary energy. These methods usually need much high process temperature. In this decades, application on soft materials has already been a big issue. In order to fabricate poly-Si film on soft board, it is necessary to decrease the process temperature. In our approach, we use aluminum induced crystallization method. By improving the quality of a-Si film with hydrogen or using self-assembles momolayers with different functional group to modify the surface tention and polarity of the substrate prior to the deposition of silicon, the process temperature may decrease to the temperature which soft board can endure.
In this study, we find that the substrate modified by aggregate APTES-SAM has some effects. After Si atoms deposite on the modified substrate by RF-sputterin, there comes some covalent bonding like Si-O-Si or Si-N-N-Si. And the follow up Si atoms will grow near these seed crystal sites. Without capped with aluminum and annealing process, it can grow up poly-Si in partial region. Although this kind of Si film can not called a poly-Si film because there still exists some amorphous regions in the film, we try to figure out this phenomenon and give a reasonable explains.

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