氧化銦鍚(indium tin oxide, ITO)在可見光範圍具有量好的導電性及透光性，因此在光學元件上常利用ITO來增加載子的傳導與收集。以單晶矽太陽能電池為例，除了可以做為透明導電層之外，還有抗反射之用途。我們使用射極-濺鍍沉積ITO薄膜，應用於異質接面之太陽能電池(a-Si/c-Si)，電極間距3.5 cm，反應壓力15 mtorr，電漿功率密度0.5 W/cm2，基材溫度230℃，沉積出厚度約為110 nm時其電阻率為3.34 × 10-4 Ω-cm，在可見光平均穿透率可高達92 %，figure of merit值為1.53 × 10-2 Ω-1。
為在單晶矽異質接合的太陽能電池製程中以低溫、低電漿密度的PECVD來製作本質的非晶層及摻雜層，形成異質接合組合p-type a-Si/a-Si/C-Si/n+ a-Si的結構，以Sinton公司的有效載子生命週期量測儀量得該元件的載子有效生命週期為87 μs，理論最高電壓可達到620 mV。在進一步的元件製作後得到Rsh = 60 Ω-cm2，Rs = 15 Ω-cm2，由於我們的Rsh太小和Rs太大，在I-V curve的量測中電池的Voc降為0.44 V，Jsc為25 mA/cm2，η為3.27 %。

Indium tin oxide (ITO) layers are usually used for a-Si/c-Si heterojunction solar cells, because of their high conductivity and high transparency in the visible region of the spectrum. ITO layers also can be used for antireflecting to reduce the reflectance losses. ITO films were deposited by RF-sputtering in this thesis. In our experiment, the lowest resitivity of ITO layer was 3.34 × 10-4 Ωcm at the thickness of 110 nm. The average transmittance in the visible region can higher than 92% and the figure of merit value was 1.53 × 10-2 Ω-1.

We can reduce cost by producing thin silicon wafer, but the thin silicon wafer can not treat by traditional high temperature diffusion process. So we deposit a-Si by PECVD to reduce the temperature of process. For the Si-heterojunction solar cells, We measured the carrier lifetime and implied Voc by mic-PCD (Sinton, WCT-120). The highest implied Voc was 620 mV. In I-V measurement, Voc was reduced to 0.44 V, Jsc was 25 mA/cm2. The efficiency of solar cell was 3.27 %, We can attribute to higher series resistance and lower shunt resistance.

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