單晶碳化矽(SiC)為第三代半導體材料之一，其在材料特性上擁有許多項優點，如：「低漏電流特性、較高熱傳導率、耐化學性及寬能隙等」，而其高硬度及耐化學性質造成碳化矽基板製造困難，且在複線式鑽石線鋸製程中也常因此導致導引鑽石線的導輪受力過大，進而使導輪側向及縱向磨耗速度加快並間接影響切片後之晶圓幾何形狀(TTV, Bow, Warp)，導輪磨耗對於未來發展大尺寸及薄化的碳化矽晶圓有著至關重要的影響。本研究將研究導輪磨耗對於切割後晶圓品質之影響，並探討結合芬頓反應於四吋4H-SiC晶圓之複線式鑽石線鋸切割製程中，使鑽石線之切削阻力下降並間接降低導輪所承受之應力，同時探討聚氨酯(PU)、超高分子聚乙烯(UPE)兩種導輪材質對於鑽石線鋸製程之抗磨耗能力比較，進而改善鑽石線加工單晶碳化矽時因受力過大造成之導輪磨耗情形，使切片後之晶圓品質大幅提升。經過三道製程之切片後進行分析，利用磨耗試驗機以鑽石線切割材料試片後，得出導輪材料方面聚氨酯(PU)為較佳之導輪材料，其能夠提供鑽石線較好之穩定能力，並且再利用小型線鋸切割機進行實驗，將單線式加工改裝為複線式加工並成功切割200 m之小型晶片，之後再利用大型複線式線鋸切割機進行四吋4H-SiC晶圓切割實驗，並成功驗證電泳沉積輔助線鋸製程能夠有效使晶圓表面粗糙度(Sa)改善43.24%，並且可使線弓角大幅降低使導輪磨耗深度改善29.22 %，在總磨耗面積方面則是改善了29.12%，並使切割後之晶圓TTV改善49.1 %、Bow改善59.14 %、Warp改善74.4 %，並且首次於本論文中提出以切割片序與晶圓厚度之關係，判斷鑽石線之不同切割片序之磨耗情形，之後再以導輪溝槽間距重新驗證比對，得出能夠以此為依據設計不同間距之導輪溝槽，以獲得更加平均之晶圓厚度，並降低人力成本及時間成本，達到改善整體製程之目的。

　　Single-crystal silicon carbide (SiC) is a third-generation semiconductor material that has numerous advantages in terms of its material properties. However, its higher hardness and chemical resistance poses challenges in wafer manufacturing, and leads to excessive stress on guide roller during the wire sawing process, resulting in accelerated wear of guide roller in both lateral and longitudinal directions. The wear of guide roller indirectly affects the geometry (TTV, Bow, Warp) of as-cut wafer and has a significant impact during slicing large-size and thinner SiC wafers. Therefore, this study focuses on the influence of guide roller wear on the quality of as-cut wafers, and discusses the integration of Fenton reaction in diamond wire sawing (DWS) process of 4" 4H-SiC wafers to reduce the sawing resistance of the diamond wire and decrease the stress on guide roller. It also compares wear resistance of two guide roller materials, polyurethane (PU), and ultra-high molecular polyethylene (UPE) in DWS process. Experiment was conducted on 4” SiC under different cooling media through the multi-diamond wire sawing machine the result revealed that the electrophoretic deposition-assisted diamond wire sawing process (EPA-DWS) effectively improves the wafer surface roughness (Sa) by 43.24%, significantly reduces the wire bow angle, resulting in a 29.22% improvement in guide roller wear depth, and enhances the overall wear area by 29.12%. This process also significantly improves the wafer geometry of TTV by 49.1%, Bow by 59.14%, and Warp by 74.4%, and the relationship between the slicing sequence and wafer thickness to determine the wear conditions of different slicing sequences for the diamond wire. The guide roller groove pitch was then used for validation and it was found that designing different pitches for guide roller grooves based on this relationship can achieve a more uniform as-cut wafer thickness, consequently reducing labor and time costs for improving the overall wafer manufacturing process.

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