研究生: |
楊天賜 Tien-Tzu Yang |
---|---|
論文名稱: |
施體與受體摻雜對氧化銦鎵鋅半導體薄膜特性之研究 The Effects of Donor and Acceptor Doping on the Properties of IGZO Thin Films |
指導教授: |
郭東昊
Dong-Hau Kuo |
口試委員: |
柯文政
Wen-Cheng Ke 何清華 Ching-Hwa Ho 郭東昊 Dong-Hau Kuo 薛人愷 Ren-Kae Shiue 宋振銘 Jenn-Ming Song |
學位類別: |
博士 Doctor |
系所名稱: |
工程學院 - 材料科學與工程系 Department of Materials Science and Engineering |
論文出版年: | 2021 |
畢業學年度: | 109 |
語文別: | 英文 |
論文頁數: | 93 |
中文關鍵詞: | 溶膠凝膠法 、錫摻雜 、銻摻雜 、氧化銦鎵鋅 |
外文關鍵詞: | Sn doping, Sb doping, p-type IGZO, defect mechanism |
相關次數: | 點閱:276 下載:0 |
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[1] K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, H. Hosono, Thin-Film
Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor, Science, 300 (2003) 1269-1272.
[2] H. Hosono, Oxide Semiconductor TFTs, Japan Science, and Technology Agency,
https://en.wikipedia.org/wiki/Indium_gallium_zinc_oxide.
[3] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, Room-
temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors, Nature, 432 (2004) 488-492.
[4] H. Hosono, M. Yasukawa, H. Kawazoe, Novel Oxide Amorphous
Semiconductors:Transparent Conducting Amorphous Oxides, Journal of Non-Crystalline Solids, 203 (1996) 334-344.
[5] H. Hosono, Ionic amorphous oxide semiconductors: Material design, carrier
transport, and device application, Journal of Non-Crystalline Solids, 352 (2006) 851-858.
[6] E. Fortunato, P. Barquinha, R. Martins, Oxide Semiconductor Thin-Film
Transistors: A Review of Recent Advances, Advanced Materials, 24 (2012) 2945-2986.
[7] K. Nomura, K. Ohta H Fau-Ueda, T. Ueda K Fau-Kamiya, M. Kamiya T Fau-Hirano,
H. Hirano M Fau - Hosono, H. Hosono, Thin-Film Transistor Fabricated in
Single-Crystalline Transparent Oxide Semiconductor.
[8] J. Sheng, T. Hong, H.-M. Lee, K. Kim, M. Sasase, J. Kim, H. Hosono, J.-S.
Park, Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V·s) via Vertical
Dimension Control Using PEALD, ACS Applied Materials & Interfaces, 11 (2019)
40300-40309.
[9] S.-J. Liu, H.-W. Fang, J.-H. Hsieh, J.-Y. Juang, Physical Properties of Amorphous Mo Doped In–Ga–Zn–O Films Grown by Magnetron co-sputtering Technique, Materials Research Bulletin, 47 (2012) 1568-1571.
[10] B.-Y. Su, S.-Y. Chu, Y.-D. Juang, S.-Y. Liu, Effects of Mg Doping on the Gate
Bias and Thermal Stability of Solution-Processed InGaZnO Thin-Film Transistors, Journal of Alloys and Compounds, 580 (2013) 10-14.
[11] R. Krishnan, J. Thirumalai, R. Chandramohan, RoomTemperature Photo-Induced,
Eu3+-Doped IGZO Transparent Thin-Films Fabricated Using Sol-Gel Method,Journal of Nanostructure in Chemistry, 3 (2013) Article number: 42.
[12] S.L. Zhan, M. Zhao, D.M. Zhuang, E.G. Fu, M.J. Cao, L. Guo, L.Q. Ouyang, The
Influence of Nitrogen Implantation on the Electrical Properties of Amorphous
IGZO, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 406 (2017) 596-599.
[13] S. Cho, S. Kim, D. Kim, M. Yi, J. Byun, P. Song, Effects of Yttrium Doping on
a-IGZO Thin Films for Use as a Channel Layer in Thin-Film Transistors, Coatings, 9(1) (2019) Article number 44.
[14] I.M. Choi, M.J. Kim, N. On, A. Song, K. Chung, H. Jeong, J.K. Park, J.K.
Jeong, Achieving High Mobility and Excellent Stability in Amorphous In–Ga–Zn–
Sn–O Thin-Film Transistors, IEEE Transactions on Electron Devices, 67 (2020)1014-1020.
[15] T. Sun, L.-Q. Shi, C.-Y. Su, W.-H. Li, X.-W. Lv, H.-J. Zhang, Y.-H. Meng, W.
Shi, S.-M. Ge, C.-Y. Tseng, Y.-F. Wang, C.-C. Lo, A. Lien, 51.1: Amorphous
Indium-Gallium-Zinc Tin-Oxide TFTs with High Mobility and Reliability, SID
Symposium Digest of Technical Papers, 46 (2015) 766-768.
[16] Shan-Haw Chiou, Chiung-Hui Huang, Yu-Tzu Hsieh., P-type Metal Oxide Semiconductor Material and Method for Fabricating the Same, United States Patent, (2015).
[17] Tzu-Chi Chou, Show-Ju Peng, Shan Haw Chiou, Yu-Tsz Shie, P-type Metal Oxide
Semiconductor Material, China Patent, (2012).
[18] K. Kobayashi, Y. Kohno, Y. Tomita, Y. Maeda, S. Matsushima, Possibility for
Dole Doping into Amorphous InGaZnO4 Films Prepared by RF Sputtering, Physica
status solidi c, 8 (2011) 531-533.
[19] M. Orita, H. Tanji, M. Mizuno, H. Adachi, I. Tanaka, Mechanism of Electrical
conductivity of transparent InGaZnO4, Physical Review B, 61 (2000) 1811-1816.
[20] F. Oba, M. Choi, A. Togo, I. Tanaka, Point defects in ZnO: an approach from
first principles, Science and Technology of Advanced Materials, 12 (2011)034302.
[21] F. Xiu, Z. Yang, L. Mandalapu, D. Zhao, J. Liu, W. Beyermann, High-Mobility
Sb-Doped p-Type ZnO by Molecular-Beam Epitaxy, Applied Physics Letters, 87(2005) Article number: 152101.
[22] L. Dai, H. Deng, F. Mao, J. Zang, The Recent Advances of Research on P-Type
ZnO Thin Film, Journal of Materials Science: Materials in Electronics, 19(2008) 727-734.
[23] A. Janotti, C.G. Van de Walle, Fundamentals of Zinc Oxide as a Semiconductor,
Reports on Progress in Physics, 72 (2009) 126501.
[24] Z.-W. Shang, H.-H. Hsu, Z.-W. Zheng, C.-H. Cheng, Progress and Challenges in
P-type Oxide-Based Thin-Film Transistors, Nanotechnology Reviews, 8 (2019)422-443.
[25] Y. Li, Z. Liu, K. Jiang, X. Hu, H2 Annealing Effect on the Structural and
Electrical Properties of Amorphous InGaZnOFilms for Thin-Film Transistors,Journal of Non-Crystalline Solids, 378 (2013) 50-54.
[26] C. Revenant, M. Benwadih, Morphology of Sol-Gel Porous In-Ga-Zn-O Thin Films
as a Function of AnnealingTemperatures, Thin Solid Films, 616 (2016) 643-648.
[27] R. Nasser, H. Elhouichet, Production of Acceptor Complexes in Sol-Gel ZnO Thin
Films by Sb Doping, Journal of Luminescence, 196 (2018) 11-19.
[28] Y. Caglar, M. Caglar, S. Ilican, XRD, SEM, XPS Studies of Sb Doped ZnO Films
and Electrical Properties of Its Based Schottky Diodes, Optik, 164 (2018) 424-432.
[29] C.-Y. Tsay, T.-T. Huang, Improvement of Physical Properties of IGZO Thin Films
Prepared by Excimer Laser Annealing ofcSol-Gel Derived Precursor Films,Materials Chemistry and Physics, 140 (2013) 365-372.
[30] L. Ling, X. Tao, S. Zhongxiao, L. Chunliang, M. Fei, Effect of Sputtering
Pressure on Surface Roughness, Oxygen Vacancy and Electrical Properties of a-IGZO Thin Films, Rare Metal Materials and Engineering, 45 (2016) 1992-1996.
[31] C.-H. Wu, F.-C. Yang, W.-C. Chen, C.-L. Chang, Influence of Oxygen/Argon
Reaction Gas Ratio on Optical and Electrical Characteristics of Amorphous IGZO
Thin Films Coated by HiPIMS Process, Surface and Coatings Technology, 303(2016) 209-214.
[32] J.-H. Kim, E.-K. Park, M.S. Kim, H.J. Cho, D.-H. Lee, J.-H. Kim, Y. Khang, K.
Park, Y.-S. Kim, Bias and Illumination Instability Analysis of Solution-Processed a-InGaZnO Thin-Film Transistors with Different Component Ratios,Thin Solid Films, 645 (2018) 154-159.
[33] D.-H. Lee, S.-M. Park, D.-K. Kim, Y.-S. Lim, Y. Moonsuk, Effects of Ga
Composition Ratio and Annealing Temperature on the Electrical Characteristics
of Solution-processed IGZO Thin-film Transistors, JSTS: Journal of Semiconductor Technology and Science, 14 (2014) 163-168.
[34] G. Amaratunga, V. Veerasamy, W. Milne, C. Davis, S.R. Silva, H. MacKenzie,
Photoconductivity in Highly Tetrahedral Diamondlike Amorphous Carbon, Applied
Physics Letters, (1993) 370-372.
[35] D.P.B. Y.-M. Chiang, W.D. Kingery, Physical Ceramics: Principles for Ceramic
Science and Engineering, John Wiley & Sons, (1997).
[36] S. Millesi, M.R. Catalano, G. Impellizzeri, I. Crupi, G. Malandrino, F.
Priolo, A. Gulino, Sb-Implanted ZnO Ultra-Thin Films, Materials Science in
Semiconductor Processing, 69 (2017) 32-35.
[37] E. Eqbal, E.I. Anila, Properties of Transparent Conducting Tin Monoxide (SnO)
Thin Films Prepared by Chemical Spray Pyrolysis Method, Physica B: Condensed
Matter, 528 (2018) 60-65.
[38] Y.-H. Song, T.-Y. Eom, S.-B. Heo, J.-Y. Cheon, B.-C. Cha, D. Kim,
Characteristics of IGZO/Ni/IGZO Tri-layer Films Deposited by DC and RF
Magnetron Sputtering, Materials Letters, 205 (2017) 122-125.
[39] Y.-S. Lee, Z.-M. Dai, C.-I. Lin, H.-C. Lin, Relationships Between the
Crystalline Phase of an IGZO Target and Electrical Properties of a-IGZO
Channel Film, Ceramics International, 38 (2012) S595-S599.
[40] Y. Cheng, K. Yang, J. Chen, L. Che, X. Zhang, Influence of Molar Ratio of
Sb/Zn On the Crystal, Electrical and Optical Properties of Sb-Doped ZnO Films,
Journal of Alloys and Compounds, 699 (2017) 690-694.