本論文以RF反應性濺鍍法製備n型Sn摻雜GaN及InGaN薄膜，並將摻雜不同成分之Sn-x GaN薄膜與p-type Silicon基板堆疊製作成p-n二極體，進而觀察其電特性。於本實驗中我們利用EDS、SEM、AFM、XRD、霍爾效應量測儀、紫外光、可見光/近紅外光分析儀以及TEM等儀器來分析薄膜特性，故本論文的研究主要可以分成五個部分。
第一部分為利用RF反應式濺鍍法在p-Si基板上沉積Sn-x GaN薄膜(x = 0、0.03、0.07與0.1)，使用靶材為Sn + Ga + GaN 陶金靶材，濺鍍功率為120瓦、沉積溫度為400 oC，並在濺鍍時固定氬氣與氮氣的流量，觀測Sn含量的改變對薄膜特性的影響。由XRD分析可知Sn-x GaN薄膜皆為纖維鋅礦結構，且其薄膜的成長優選方向為(10-10)結晶平面，而(10-10)結晶平面的繞射峰會隨著薄膜內Sn含量增加而往低角度偏移。從霍爾效應量測結果可以得知當x = 0.03時，對於提升GaN摻雜薄膜之載子濃度具有最佳之效益比，薄膜內部載子濃度為2.85x10^18 cm-3，載子遷移率為0.31 cm^2V^-1s^-1。從UV吸收光譜計算Sn-x GaN薄膜，當x從0 增加至0.1時，薄膜能隙則從3.18 eV下降至2.49 eV。
第二部分為利用RF反應式濺鍍法在p-Si基板上使用不同濺鍍功率製備Sn-0.03 GaN薄膜，沉積溫度為400 oC，觀察濺鍍功率為90、120及150瓦對於薄膜特性之影響。XRD分析顯示Sn-0.03 GaN薄膜於不同濺鍍功率下皆為纖維鋅礦結構，且薄膜的成長優選方向為(10-10)結晶平面，而其結晶性將隨功率增加而提升。從霍爾效應量測結果可以得知當濺鍍功率為150瓦時，薄膜具有最高之載子濃度，其載子濃度為2.54x10^19 cm-3，載子遷移率為20.4 cm^2V^-1s^-1。利用UV吸收光譜計算Sn-0.03 GaN薄膜的能隙，當濺鍍功率由90瓦提升至150瓦後，薄膜能隙則從3.17 eV下降至2.62 eV。
第三部分則是利用RF反應式濺鍍法在p-Si基板上於不同沉積溫度下製備Sn-0.03 GaN薄膜，濺鍍功率為150瓦，觀察沉積溫度為100、200、300及400 oC對於薄膜特性之影響。XRD分析顯示Sn-0.03 GaN薄膜於不同沉積溫度下皆為纖維鋅礦結構，且薄膜的成長優選方向為(10-10)結晶平面，而其結晶性將隨溫度增加而提升。從霍爾效應量測結果可以得知當沉積溫度為400 oC時，薄膜具有最高之載子濃度，其結果同第二部分，而當沉積溫度降至100 oC後，載子濃度降至1.6x10^17 cm-3，載子遷移率為167 cm^2^V-1s^-1。利用UV吸收光譜計算Sn-0.03 GaN薄膜的能隙，當沉積溫度由100 oC提升至400 oC後，薄膜能隙則從2.83 eV下降至2.62 eV。
第四部份則是利用RF反應式濺鍍法將Sn-x GaN薄膜與p-Si基板製備成薄膜二極體，其中Sn-x GaN (x = 0、0.03、0.07與0.1)二極體的啟動電壓分別為0.6、2.0、3.8與5.3 V，在-1V的漏電流密度則分別為2.31x10^-5、6.28x10^-5、4.25x10^-6與2.28x10^-7 A/cm2，崩潰電壓皆高於-20V。並且利用熱電子發射理論中的標準二極體方程式計算出Sn-x GaN (x = 0、0.03、0.07與0.1)之p-n二極體之能障分別為0.59、0.68、0.71及0.88 eV，表示Sn含量越高，將提高p-n二極體能障。
第五部分則是利用RF反應式濺鍍法在p-Si基板上於不同沉積溫度下製備Sn-0.07 InGaN薄膜，使用靶材為Sn + In + Ga + GaN陶金靶，濺鍍功率為120瓦，並在濺鍍時固定氬氣與氮氣的流量，觀察沉積溫度為100、200、300及400 oC對於薄膜特性之影響。XRD分析顯示Sn-0.03 InGaN薄膜於不同沉積溫度下皆為纖維鋅礦結構，且薄膜的成長優選方向為(10-10)結晶平面。從霍爾效應量測結果可以得知當沉積溫度為400 oC時，薄膜具有最高之載子濃度，其載子濃度為1.5x10^19 cm^-3，載子遷移率為40 cm^2V^-1s^-1。利用UV吸收光譜計算Sn-0.07 InGaN薄膜的能隙，當沉積溫度由100 oC提升至400 oC後，薄膜能隙則從2.66 eV下降至2.50 eV。

In this research, we successfully deposited n-type tin-doped GaN and InGaN (Sn-GaN、Sn-InGaN) films by RF sputtering with single cermet targets. All the thin films were analyzed by EDS, SEM, TEM, AFM, XRD, Hall Effect measurement, and UV. This study was divided into five parts.
The first part is about Sn-x GaN films (x = 0, 0.03, 0.07 and 0.1). The Sn-x GaN films were deposited on Si (100) substrate by RF sputtering with single (Sn + Ga + GaN) cermet target in an Ar/N2 atmosphere. The cermet targets were made by hot pressing. The deposition temperature was 400 oC. The Sn-x GaN films had a wurtzite structure with a preferential (10-10) growth plane. As x value of the Sn-x GaN increased to 0.03, the carrier concentration increase to 2.85x10^18 cm^-3 and carrier mobility is 0.31 cm^2V^-1s^-1. The energy bandgap of Sn-x GaN films decreased from 3.18 to 2.49 eV, as x value increased from 0 to 0.1. The changes in electric conductivity and bandgap explain the changes in the Sn solubility with increasing in sputtering power.
The second part is about Sn-0.03 GaN deposited under different powers. The deposition temperature was 400 oC and sputter powers were 90、120, and 150 watt. The Sn-0.03 GaN films had a wurtzite structure with a preferential (10-10) growth plane. Its crystallinity would increase with power. As power increased to 150 watt, the carrier concentration increased to 2.54x10^19 cm^-3 and carrier mobility was 20.4 cm2V-1s-1. The energy bandgap of Sn-0.03 GaN films decreased from 3.17 to 2.62 eV, as power increased from 90 to 150 watt. The changes in electric conductivity and bandgap explain the changes in the Sn solubility with increasing in sputtering power.
The third part is to deposit Sn-0.03 GaN thin films at 150 watt with different growth temperatures. The Sn-0.03 GaN films had a wurtzite structure with a preferential (10-10) growth plane. Its crystallinity increased with temperature. As temperature increased to 400oC, the carrier concentration increased to 2.54x10^19 cm^-3 and carrier mobility was 20.4 cm^2V^-1s^-1 as same as the second part. And we deposited it at 100 oC , the carrier concentration decreased to 1.6x10^17 cm^-3 and carrier mobility was 167 cm^2V^-1s^-1. The energy bandgap of Sn-0.03 GaN films decreased from 2.83 to 2.62 eV, as temperature increased from 100 to 400 oC to increase the Sn solubility in GaN.
The fourth part is about Sn-x GaN p-n diode. The p-n diode was piled on p-Si substrate by RF sputtering. The current-voltage (I-V) curves of the p-n diode tested at room temperature were performed. The I-V curves exhibited excellent rectifying behavior. Under the forward bias, the turn-on voltage of Sn-x GaN diode at x = 0、0.03、0.07 and 0.1 was 0.6、2.0、3.8, and 5.3 V, respectively. Their leakage currents of Sn-x GaN diode were 2.31x10^-5、6.28x10^-5、4.25x10^-6 and 2.28x10^-7 A/cm2 at -1 V and their with breakdown voltages higher than -20 V. The ideality factors and the barrier heights were calculated by using equations based on the standard thermionic-emission mode. The barrier heights of Sn-x GaN diode (x = 0、0.03、0.07 and 0.1) diodes were 0.59、0.68、0.71 and 0.88 eV, respectively. It indicates that the barrier height increases with tin content.
The final part is to sputter Sn-0.07 InGaN thin films at 120 watt with deposition temperatures of 100、200、300、and 400 oC. The Sn-0.07 InGaN films had a wurtzite structure with a preferential (10-10) growth plane. As temperature increased to 400 oC, the carrier concentration increased to 1.5x10^19 cm^-3 and carrier mobility is 40 cm^2V^-1s^-1. The energy bandgap of Sn-0.07 InGaN films decreased from 2.66 to 2.50 eV, as temperature increased from 100 to 400 oC to slightly increase the Sn solubility.

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