研究生: |
鄧至敦 Chih-tun Teng |
---|---|
論文名稱: |
應用無電鍍鎳於矽奈米線成長之研究 The growth of silicon nanowire by Electroless Deposition and SLS mechanism |
指導教授: |
周賢鎧
Shyan-kay Jou |
口試委員: |
黃柏仁
Bohr-Ran Huang 胡毅 Hu, Yi |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 材料科學與工程系 Department of Materials Science and Engineering |
論文出版年: | 2009 |
畢業學年度: | 97 |
語文別: | 中文 |
論文頁數: | 79 |
中文關鍵詞: | 矽奈米線 、無電鍍鎳 |
外文關鍵詞: | Silicon nanowires, Electroless Deposition ELD |
相關次數: | 點閱:236 下載:7 |
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本論文研究的內容分成四個部分。第一個部分是在矽基材上製備鎳金屬觸媒,利用無電解鍍鎳法先在基材上鍍上一層鎳的薄膜,以利使用SLS機制成長矽奈米線。
第二部分為藉由熱退火處理的機制,在高溫爐管中進行熱處理,以不同之溫度之方式來成長矽奈米線。實驗發現在1100℃,60分鐘之條件下可得線徑均勻的矽奈米線,且此溫度下可得到最多的矽奈米線數量。
第三個部分則是在成長矽奈米線結構後,利用輕氧化方式,使矽奈米線中的矽原子局部氧化,產生氧缺陷效應結果,以650℃、10分鐘進行氧化的矽奈米線,其PL特性可以較未氧化前PL強度增加約4倍。
第四個部分使用1100℃生長出的矽奈米線經由650℃之輕氧化後,使用濺鍍機在矽奈米線面鍍上ITO,背面則鍍上鋁形成歐姆接觸,並量測電激發光之特性
Abstract
In this thesis, the study is divided into four parts. The first part of study is on electroless deposition (ELD) of nickel film on silicon substrate. and then used SLS mechanism to grow SiNWS.
The second part of study focuses on anneal of nickel-coated silicon substrate in a furnace. The growth of silicon nanowires were conducted at various temperatures. As a result ,SiNW uniform diameter and high density were generated at 1100℃ .
The third part of study used mils oxidation of SiNWS to promote quantum confinement effect. SiNW oxidized at 650℃ for 10 minutes enhanced photoluminesce ( PL ) intensity about 4 times compared to the as grow counterpart.
The final part of study focuses on electroluminescene ( EL ) of SiNW . Then was grow at 1100℃ for 60 minutes followed by oxidation at 650℃ for 10 minutes.
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