本研究以Ti、TiN與ITO作為互補式電阻式記憶體之電極，堆疊三層電極形成ITO/Ti/ITO與ITO/TiN/ITO，並藉由Ti金屬薄膜與ITO薄膜結合時兩者不相同之氧化勢形成氧化界面層TiOx，使金屬電極與氧化物電極堆疊後具有電阻式記憶體的操作特性。
Ti/ITO與TiN/ITO皆具有雙極式電阻式記憶體元件的操作特性，實驗中經相同退火溫度與時間過後TiN/ITO與Ti/ITO元件界面處皆會產生TiOx之氧化界面層。在元件的I-V操作下，Ti/ITO元件經過退火後高低電阻無法有高的比值，在多次穩定操作後高低電阻比僅達1.5倍；TiN/ITO元件經過退火後之高低電阻比約為103倍，推測是接面狀態的改變所造成。高電阻狀態下TiN/TiOx/ITO元件有著Schottky導電特性；然而Ti/TiOx/ITO元件以Poole-Frenkle emission為高電阻態導電機制，推測Ti與ITO形成的界面氧化層TiOx中存在較多缺陷，因此載子得以藉由捕捉缺陷而傳導。
堆疊三層電極並經過真空熱退火形成之ITO/TiOx/Ti/TiOx/ITO與ITO/TiOx/TiN/TiOx/ITO互補式元件，其中以TiN做為中間電極之元件具有約為20的非線性因子，且隨著TiN中間電極之氮成分提高時，CRS元件有較高的狀態1(HRS/LRS)與狀態ON(LRS/LRS)電阻比。

In this study, we used titanium (Ti)、titanium nitride(TiN) and indium tin oxide (ITO) as the electrodes to fabricate the ITO/Ti/ITO and ITO/TiN/ITO tri-layer stacking structure. With an anneal process interfacial layer will be formed at TiN(Ti)/ITO and ITO/TiN(Ti) interfaces.
The Ti/ITO and TiN/ITO devices showed bipolar switching of resistance. The Ti/ITO device had an average ratio of about 1.5. The TiN/ITO device had a high resistance ratio of 103, possibly caused by the Schottky contact in TiN/TiOx junction. At high resistance state of the TiN/TiOx/ITO conductive modal is governed by Schottky emission; whereas, the Ti/TiOx/ITO is Poole-Frenkel emission at high resistance state, suggesting that there are more defects at interfacial oxide layer TiOx in the Ti/TiOx/ITO device.
Annealing the the ITO/Ti/ITO and ITO/TiN/ITO tri-layer stacks in vacuum produced ITO/TiOx/Ti/TiOx/ITO and ITO/TiOx/TiN/TiOx/ITO complementary resistive switching (CRS) devices. The CRS devices with TiN as intermediate electrodes had nonlinearity factor of about 20. With nitrogen content in TiN electrodes, CRS devices had a higher resistance ratio at the status “1” (HRS/LRS) to the status “ON” (LRS/LRS).

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