本論文針對碳化矽的低溫製備，考慮利用矽化物合金的低融點特性，期望在較低的溫度下使其與活性碳物種反應來生成碳化矽鍵結。
本研究將採用電子束與熱蒸鍍法共蒸鍍石墨與金矽/鋁矽合金，分別於合金共晶溫度(363℃, 577℃)附近使矽源蒸發，並在矽(100)基板表面與氣化之碳源結合而成長出碳化矽薄膜。實驗重點在調控基板溫度以及蒸發源的流束以獲得產物中碳化矽鍵結的最大化。
以FTIR, XPS, Raman, XRD及SEM等分析手法，針對製備出的材質進行鍵結型態、元素成分、晶體結構及薄膜表面形態進行分析。結果顯示，使用鋁矽合金系統製備100 nm厚薄膜的實驗，在基板溫度620℃與蒸發源的Si/C流束比為16倍時，由XPS C1s光譜分析得到長膜中碳化矽鍵結比例僅為10%。當改使用金矽合金系統製備50 nm厚薄膜時，在基板溫度580℃與蒸發源的Si/C流束比為5.5倍時，長膜中碳化矽鍵結比例提升到55%，明顯地減少了非碳化矽雜相之生成。

In this thesis, we aimed at preparing silicon carbide thin films at low temperatures by co-depositing silicide alloy that has a low eutectic point with carbon. First of all, aluminum-silicon alloy that has an eutectic point of 577 ℃and carbon were evaporated simultaneously using vacuum evaporation and electron beam evaporation techniques, respectively. The supplying flux ratio of Si/C and substrate temperature were varied to maximize the bonding of silicon carbide of the deposits on Si(100) wafers. The result showed that the film grown at a Si/C flux ratio of 16 and at a substrate temperature of 620℃has the largest amount of SiC bonding of 10% according to a quantitative analysis of XPS C1s spectrum. Then, gold-silicide that has a much lower eutectic point (363℃) was used instead. The result showed that the film grown at a Si/C flux ratio of 5.5 and at a substrate temperature of 580℃ has a much higher SiC bonding of 55%, indicating that gold-silicide is a suitable Si source for SiC formation, most plausibly due to the inertness of gold to form phases other than SiC.

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