本研究
之目的 為 研發線上量測軟拋墊之 磨耗率 (Pad Wearing Rate, PWR)與 性能指標應用於化學機械拋光之製程 透過 先前 開 發之動態量測
拋光墊性能指標系統 以 自行研發 串聯 式操作介面與軟拋墊計算模組 分
析 軟 拋墊於製程中 之 化學機械 拋光 (CMP)與 刷整 (Brushing)磨耗 率 以及拋
光墊之 表面粗糙度、溝槽深度、 承載 面積 比 、拋光墊非均勻度等 拋光墊 表
面性能指標。 本 研究 分以三階段進行 先 以 軟拋墊 計算模組及 硬拋墊 計算
模組及多組拋光盤轉速及量測取樣率針對軟 拋墊進行表面形貌量測，分
析其資料穩定性選擇 出轉速 60 rpm及取樣率 5000 Hz之最佳量測參數，
再以此量測參數進行後續實驗 透過 10片銅膜晶圓 CMP實驗 分析出軟 拋
墊之 粗糙度變化主要來 自 承載 面積 比 中的儲存區 (Rvk )受到 拋光液懸浮微
粒 及 晶圓碎片 填塞 並驗證本系統對軟 拋墊表面形貌變化之量測能力， 並
透過對 純 銅板 (99.98%, 3N8)的純 CMP及純 Brushing之實驗交互比對， 得
出製程中 Brushing與 CMP的 磨耗率佔比為 16%及 84%。 最後 透過 30片
40×40 mm2銅膜 CMP實驗中得到軟 拋墊之 溝槽深度與儲存區 (Rvk)等拋
光墊性能指標與晶圓移除率分別具有高度相關 (0.75)及中度相關 (0.6)的相
關性，由於 此兩種指標具有涵養與散佈 拋光液 之功能 故 判斷軟 拋墊於 銅
膜 CMP之 移除機制中以化學能佔比較高之結果 。

This study aims to develop a signal analysis module for pad wearing rate (PWR) and pad performance of soft polishing pad in Chemical Mechanical Planarization/Polishing (CMP). The topography of the total working area of the polishing pad can be monitored by the dynamic pad monitoring system (DPMS) previously developed. A calculation module is designed for analyzing the PWR, pad surface roughness, pad groove depth, bearing area ratio, and pad uniformity of both brushing and CMP process. The study is conducted in three phases. First, the topography of the soft pad is measured in different rotation speeds and sampling frequencies. The results of the soft pad and hard pad are compared to determine the optimum parameters for the calculation module. As a result, the optimum parameters for measurement are 60 rpm as platen speed and 5000 Hz as sampling frequency. Secondly, CMP experiments with 10 pieces of copper blanket wafers are conducted to observed the change of pad topography during the process. Results show the pad roughness is reduced because the Rvk is filling by slurry particles and wafer debris. Besides, The PWR is measured by experiments of brushing process and copper plate CMP. Results show that the ratio of PWR of brushing and CMP process are 16% and 84%. Finally, the correlations between pad performance, wafer remove rate, and wafer Sa are discussed through CMP experiments of 30 pieces of copper blanket wafers. Results show that Rvk and pad groove depth are highly related to MRR. Because Rvk and pad groove depth can represent the slurry reservoir section of pad, the chemical removal of Cu-CMP using a soft pad is relatively higher than that of Cu-CMP by the hard pad.

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