The hybrid active photonic devices that combine the strengths of both III-V and silicon-on-insulator (SOI) material platforms are the enabling technologies to realize the light sources and other functional devices in photonic integrated circuits (PICs). The adhesive bonding is a good solution for hybrid lasers by bonding active III-V layer and SOI layer in order to the couple and transfer the light from one waveguide to another.
In this thesis, the hybrid active III-V/SOI photonic devices are designed by using two different coupling methods, including the tapered coupler method and grating-assisted codirectional coupler (GACC) method. Both methods use the adhesive bonding to combine the active III-V and passive SOI structures. The key concept of both methods is to control the effective refractive indices of the active III-V and SOI waveguides to match the phase velocity of the modes in the two waveguides. By doing so, the light can easily transfer from one waveguide to other. The simulation result shows that the design of hybrid active III-V/SOI devices with the Si rib waveguide thick of 400 nm can reach the highest coupling efficiency of 98% for 97-µm device length. The device has succeeded in transferring almost all the light from an active III-V waveguide into Si waveguide. Meanwhile, the structure design of hybrid an active III-V/SOI photonic devices with the general Si RIB waveguide thick of 220 nm could achieve of 87.8% for 120 µm device length. It shows that tapered coupler is a good candidate method to transfer mode from an active III-V waveguide into the Si waveguide. However, the fabrication process for tapered design in the III-V layer is difficult and requires high-precision photolithography to minimize the light propagation loss.
To avoid the use of fine taper structure, the GACC is investigated by adding the directional grating coupler between the active III-V and SOI waveguides. The simulation results show that the GACC methods with 220 nm Si RIB waveguide and the grating period of 3.975 (duty cycle of 50%) could achieve the coupling efficiency of 35% for 80 µm device length. Although the result is not as good as using tapered coupler methods, the GACC methods are easier in the fabrication process and it needs shorter device length to couple the mode into SOI waveguide than using tapered coupler method. The coupling efficiency can be enhanced by optimizing the layer structure.

The hybrid active photonic devices that combine the strengths of both III-V and silicon-on-insulator (SOI) material platforms are the enabling technologies to realize the light sources and other functional devices in photonic integrated circuits (PICs). The adhesive bonding is a good solution for hybrid lasers by bonding active III-V layer and SOI layer in order to the couple and transfer the light from one waveguide to another.
In this thesis, the hybrid active III-V/SOI photonic devices are designed by using two different coupling methods, including the tapered coupler method and grating-assisted codirectional coupler (GACC) method. Both methods use the adhesive bonding to combine the active III-V and passive SOI structures. The key concept of both methods is to control the effective refractive indices of the active III-V and SOI waveguides to match the phase velocity of the modes in the two waveguides. By doing so, the light can easily transfer from one waveguide to other. The simulation result shows that the design of hybrid active III-V/SOI devices with the Si rib waveguide thick of 400 nm can reach the highest coupling efficiency of 98% for 97-µm device length. The device has succeeded in transferring almost all the light from an active III-V waveguide into Si waveguide. Meanwhile, the structure design of hybrid an active III-V/SOI photonic devices with the general Si RIB waveguide thick of 220 nm could achieve of 87.8% for 120 µm device length. It shows that tapered coupler is a good candidate method to transfer mode from an active III-V waveguide into the Si waveguide. However, the fabrication process for tapered design in the III-V layer is difficult and requires high-precision photolithography to minimize the light propagation loss.
To avoid the use of fine taper structure, the GACC is investigated by adding the directional grating coupler between the active III-V and SOI waveguides. The simulation results show that the GACC methods with 220 nm Si RIB waveguide and the grating period of 3.975 (duty cycle of 50%) could achieve the coupling efficiency of 35% for 80 µm device length. Although the result is not as good as using tapered coupler methods, the GACC methods are easier in the fabrication process and it needs shorter device length to couple the mode into SOI waveguide than using tapered coupler method. The coupling efficiency can be enhanced by optimizing the layer structure.

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