本研究分為兩個部分，第一部分是透過磁控式濺鍍系統濺鍍一層銅膜在銅箔上以及含有氧化層之矽基板上，搭配快速升溫化學氣相沉積法製備雙層石墨烯(Bilayer graphene, BLG)，分別為生長在銅箔上(BLG/foil)以及生長在含有氧化層的矽基板上(BLG/wafer)，以拉曼光譜儀、XPS、AFM以及UV-vis光譜進行雙層石墨烯的分析，並和單層石墨烯的性質做比較。結果發現BLG/wafer由於電洞摻雜發生電荷轉移，2D band 相較單層的有些許的藍移，另外製備的雙層石墨烯皆有D’ band的訊號，歸因於晶格變形造成的缺陷。
以XPS分析材料之鍵結比例，以及碳、氧原子占比，對於BLG/foil其碳氧比為81：18， BLG/wafer則為67：32，氧含量的提高，推測這是石墨烯缺陷多石墨化不完全。接著由AFM及UV-vis光譜結果得出，製備的雙層石墨烯厚度為0.9 nm，穿透度為95.3 %。
第二部分為將製備的雙層石墨烯應用於背閘極式電晶體元件上，以磁控式濺鍍系統沉積元件的電極，分別是Ag/Ti以及Al，電極間以BLG做為通道，其長為20 μm，寬0.3 mm，搭配Keithley 2612 B觀測其電性結果，以Ids-Vds在不同Vg偏壓下之結果，得出製備的BLG為p-doped，用Ids-Vg得出狄拉克點並計算出電子遷移率、載子濃度以及費米能階，在Vg為10.3 V時其電子遷移率μ_e等於21.3 cm^2 V^(-1) s^(-1)，載子遷移率μ_h等於15.7 cm^2 V^(-1) s^(-1)，載子濃度為〖7.42×〖10〗^11 cm〗^(-2)，費米能階E_F為-9.15×〖10〗^(-2) eV，賽貝克係數為-2.57×〖10〗^(-1) μV/K。
接著嘗試以532 nm之雷射光照射於元件之BLG通道，觀測其通道電流變化，激發光的能量是否使石墨烯產生伏效應或光熱電效應。

The study is divided into two parts. The first part uses magnetron sputtering system to deposit a copper film on copper foil and silicon substrate containing the oxide layer through, and then prepare the bilayer graphene (BLG) by rapid thermal chemical vapor deposition, which are named BLG/foil and BLG/wafer. The bilayer graphene was analyzed by Raman spectrometer, XPS, AFM and UV-vis spectroscopy, and compared with the single-layer graphene (SLG). It is found that the 2D band of the BLG has blue shift compared to the SLG due to charge transfer in the hole doping. The BLG has the D' band signal due to lattice deformation defects.
XPS analysis is used to obtain the bonding ratio of the material, and the proportion of carbon and oxygen atoms. The carbon-oxygen ratios are 81:18 for BLG/foil and 67:32 for BLG/wafer. Graphene defect multi-graphitization is not complete. The results of AFM and UV-vis spectroscopy showed that the thickness of BLG is 0.9 nm and transmittance of 95.3%.
The second part is to apply the BLG to the back-gate field effect transistor with Ag/Ti and Al electrodes, and the BLG as charge transport channel of 20 μm of length and 0.3 mm of width. The electrical characteristics were measured by Keithley 2612 B with different Vg biases and the results indicated that the prepared BLG was p-doped. The Dirac point is obtained by Ids-Vg and the electron mobility, carrier concentration and Fermi level are calculated. When Vg is 10.3 V, μ_e is 21.3 cm^2 V^(-1) s^(-1), μ_h is 15.7 cm^2 V^(-1) s^(-1),n is 〖7.42×〖10〗^11 cm〗^(-2), E_F is -9.15×〖10〗^(-2) eV,and Seebeck coefficient S is -2.57×〖10〗^(-1) μV/K.
Then, the channel of the FET was irradiated by a 532 nm laser, and two metal electrodes to observe whether there was photovoltaic effect or photo-thermal effect..

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