本研究以有機金屬化合物(hfac)CuI(COD)為先驅物的化學氣相沈積系統探討金屬銅薄膜的成長動力及其材料分析。我們將探討沈積溫度及銅先驅物分壓對反應速率的影響。經由數據分析，探討反應機構及動力模型的建立。另外，探討不同沈積溫度對銅膜的表面型態、結晶結構、微結構及電性的影響。
結果顯示沈積溫度介於120∼190℃時銅膜沈積速率存在於表面控制反應區(Surface reaction limited regime)之內，活化能約18.32KJ/mol。大於沈積溫度190℃時則屬於質傳控制區(Mass transfer limited regime)，活化能約0.625KJ/mol。經由動力數據的回歸分析，化學氣相沈積銅膜的Langmuir-Hinshelwood動力模式為：
-ra=k2Pa^2/(1+K1Pa)^2
其中k2=6.96x106(nm*min-1*torr-2)，K1=324.54(torr-1)
沈積溫度為190℃時有最佳之銅膜電性。在190℃沈積的銅膜電性較140℃沈積的銅膜為佳的原因是因為銅膜較為緻密平坦及Cu(111)結晶性較佳以致於有較低的晶界電子散射。而在230℃沈積的銅膜電性較190℃沈積的銅膜為差的原因是因為銅晶粒的空隙大且有較高的表面電子散射。

Growth kinetics and material analysis of copper films with metalorganic chemical vapor deposition (MOCVD) reaction system using hexafluoroacetonate-Cu(I)-1,5-cyclooctadiene (hfac)CuI(COD) as the precursor was studied. In this study, the kinetic data of MOCVD Cu thin films as a function of deposition temperature and partial pressure of precursor were investigated. In addition, the effect of different deposition temperatures on the surface morphology、crystal structure、microstructure and film electricity was discussed.
It was found that the growth rate of copper between 120~190℃was written surface reaction limited regime with the value of activation energy as 18.32KJ/mol. Above 190℃, growth rate was in the mass transfer limited regime with an activation energy of 0.652KJ/mol. Through the analysis on the growth kinetics, the kinetic model of chemical vapor deposition as follows:
-ra=k2Pa^2/(1+K1Pa)^2
where k2=6.96x106(nm*min-1*torr-2)，K1=324.54(torr-1)
When the deposition temperature was 190℃, the best copper film electricity was obtained. The electricity of copper film, deposited at 190℃ was better than that of the copper films of deposited at 140℃, because the former could grow the flatter and denser copper films, and stronger preferred orientation of Cu(111). As a result, this lowered electron scattering of grain boundary. The electricity of copper films deposited at 230℃ is worse than that of copper films deposited at 190℃, because the former had large voids in the films due to huge copper grains. Consequently, this caused higher surface electron scattering.

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