本研究探討Al0.3In0.7Sb三元系統與InSb-In異質結構奈米線兩部份。首先，兩種奈米線的合成方法皆是通過使用真空液壓鑄造的方式來製備，鑄造用的前驅材料Al0.3In0.7Sb及InSb-In塊材為自行熔煉所獲得。第一部份，由於在Al0.3In0.7Sb此比例下的熔點882°C高於目前自家實驗室設備的極限810°C，因此只將其加熱至810°C並隨即壓入陽極氧化鋁模板中。藉由掃描式電子顯微鏡及能量色散X射線光譜儀來確認其Al0.3In0.7Sb奈米線的表面形態、長度、直徑及成分比例。奈米線的直徑為100 nm與陽極氧化鋁孔徑相同，長度大約落在10-30 µm之間。經由穿透式電子顯微鏡觀察可得知Al0.3In0.7Sb奈米線具有一定的均勻性且透過晶格面間距的對照能夠印證鋁成功的部份取代了銦，亦透過拉曼光譜證明其壓縮應力的存在。
第二部分，由於InSb-In奈米線的熔點較低大約為480 °C，因此在製成過程時能順利將溫度加熱至熔點以上。利用金相實驗分析其InSb-In塊材相分離的特性與兩相的分布情形。通過掃描式電子顯微鏡影像對大量InSb-In異質結構奈米線進行統計分析，可得知平均長度比值InSb/In為1.9 ± 0.7712，而在長度分布的部分，InSb : In為178 ± 91.22 nm : 93 ± 43.77 nm，使用穿透式電子顯微鏡觀察其微結構，發現其退火與未退火的相分離有著完全不同的情況。並進一步分析其異質結構而觀察到在界面處的晶格失配為35.96 %，其磊晶關係為[1 ̅10]InSb // [111]In , (111)InSb // (1 ̅01)In。藉由掃描穿透式電子顯微鏡發現InSb區段的In與Sb之莫耳比為11 : 9，且在界面中存在著10奈米左右的銦銻合金過渡相，此過渡相有著與銦的體心四方結構極為相似的結構，但存在著許多缺陷。此外，藉由X-射線繞射分析較為大量的奈米線之晶體結構，足以證明其製程的穩定性與均勻性也能得到奈米線較為優選的結晶取向，並且從拉曼光譜分析中能夠發現塊材與奈米線之光學聲子振動的強度有很大的差異，這是由於奈米線有著非常強烈的優選成長方向且為單晶的結構這兩因素所導致。

In this thesis, the Al0.3In0.7Sb ternary system and InSb-In heterostructure nanowires have been successfully synthesized via vacuum hydraulic pressure injection process. In Al0.3In0.7Sb part, due to Al0.3In0.7Sb has melting point of 882 °C which is higher than the limit of our equipment 810 °C, the operating temperature was set at 810 °C then press into the AAO template. By SEM analysis, The Al0.3In0.7Sb has 100 nm diameter which corresponds to the pore size of AAO and 10-30 µm length. The composition of Al0.3In0.7Sb bulk and NWs was characterized by EDS. The results of the SAED and Raman analysis show the presence of lattice strain which is a proof of the presence of Al atoms in the InSb lattice. In addition, the STEM mapping demonstrates the homogeneous distribution of aluminum in the nanowires.
On the other hand, since the melting point of the InSb-In nanowires is about 480 °C, the temperature can be easily heated up above the melting point during the process. Metallographic test was used to analyze the phase separation characteristics of InSb-In bulk and the distribution of the two phases. By SEM image, the average length ratio of InSb/In is approximately 1.9 ± 0.7712. The distribution of length of InSb is about 178 ± 91.22 nm and the In is around 93 ± 43.77 nm. According to the TEM analysis, the quality of InSb-In heterostructure nanowires were improved by annealing treatment. The epitaxial relationship of heterojunction of InSb-In is [1 ̅10]InSb // [111]In , (111)InSb // (1 ̅01)In and lattice mismatch was calculated as 35.96%. Therefore, a number of misfit dislocations were formed at the interface. Moreover, the linescan of STEM demonstrate that the InSb segment has an 11:9 molar ratio and an about 10 nm metastable phase In1-xSbx with In structure was found at the interface. In addition, the crystal structure information of a large number of nanowires by X-ray diffraction sufficiently proves that the stability and uniformity of the process and it can also obtain the preferred crystal orientation of the InSb-In nanowires. In Raman spectroscopy analysis, it can be seen that the relative intensity of the optical phonon vibration between bulk and nanowires is very different. This is due to the nanowires have a very strong preferred growth direction and they are single crystal structures.

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