成長微奈米結構氧化鈷薄膜暨應用於氣體感測器之研究

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研究生：	黃昭棋 Chao-chi Huang
論文名稱：	成長微奈米結構氧化鈷薄膜暨應用於氣體感測器之研究 The Study of Growth of Micro/Nanostructructural on Cobalt Oxide Thin Flims and Their Application for Gas Sensor
指導教授：	周賢鎧 Shyankay Jou
口試委員:	顏怡文 Yee-wen Yen 胡毅 Yi Hu
學位類別：	碩士 Master
系所名稱：	工程學院 - 材料科學與工程系 Department of Materials Science and Engineering
論文出版年：	2008
畢業學年度：	96
語文別：	中文
論文頁數：	87
中文關鍵詞：	氧化鈷、薄膜、奈米結構、氣體感測器
外文關鍵詞：	cobalt oxide, thin film, nanostructure, gas sensor
相關次數：	點閱：241 下載：4
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中文摘要
本論文研究在氧化鋁基材上利用網印法塗佈高溫銀膠，經高溫燒結後作為電極，接著以真空磁控濺鍍法於其上成長鈷薄膜，再於不同氣氛下以加熱板直接加熱使其表面產生微奈米結構氧化鈷，以提高其比表面積，製成氣體感測器元件。
以SEM分析氧化鈷表面形貌得知，試片於水氣環境及乾燥空氣中加熱，氧化鈷表面形成細線狀與板狀奈米結構共存的情形，與試片於大氣環境中加熱主要為細線狀奈米結構有顯著之不同。以XRD分析氧化鈷之結構與成分可得，短時間加熱之試片其CoO之繞射峯較明顯，隨加熱時間之增長氧化鈷之Co3O4之繞射峯強度增強。
本論文完成氧化鈷氣體感測器於真空環境與氮氧混合氣下之性能測試，驗證以鈷薄膜直接加熱成長氧化鈷微奈米結構製備之氣體感測器之可行性。

Abstract
In this thesis, we deposited cobalt (Co) thin film by sputtering on Al2O3 substrate which was already coated with Ag electrode by screen printing. The Co films were heated in different atmospheres by using a hot plat, for growing the nanostructural cobalt oxide thin films with high specific surface area for gas sensor.
The morphology and structure were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). Investigation by SEM showed the samples heated with flowing water vapor and dry air were composed of nanowires & nanowalls. The samples heated in normal air showed a morphology with mainly nanowires. Observation by XRD indicated that sample showed high CoO diffraction peak for short heating duration, and with of an increase the Co3O4 diffraction peak increase the heating duration was observed.
Gas sensing using nanostructural cobalt oxides was conducted. The experimental results proved that micro/nanostructure cobalt oxides grown by heating cobalt thin film can be use for gas sensor.

目錄
第一章  前言………………………………………………………………………... 1
第二章  文獻回顧
2-1  金屬氧化物半導體氣體感測器..................................................................... 2
 2-1-1  金屬氧化物半導體型氣體感測器的感測機制................................ 2
 2-1-2  金屬氧化物之缺陷特性及其Kroger-Vink表記法…………………3
 2-1-3  非當量比性金屬氧化物之導電率與氧分壓之相關性…………… 5
 2-1-4  氧化鈷之缺陷特性………………………………………………… 7
 2-1-5  半導體氣體感測器之材料與選用………………………………… 9
2-2  氧化鈷薄膜與奈米結構製備………………………………………………10
 2-2-1  氧化鈷性質……………………………………………………….. 10
 2-2-2  薄膜製備…………………………………………………………...14
 2-2-3  奈米結構種類……………………………………………………...15
 2-2-4  加熱板法…………………………………………………………...16

第三章  實驗方法與步驟
3.1  實驗材料…………………………………………………………………….19
3.2  實驗儀器與裝置…………………………………………………………….19
3.3  實驗步驟…………………………………………………………………….20
3.3.1  試片準備及清洗……………………………………………………….20
3.3.2  感測器電極製作……………………………………………………….21
3.3.3  氧化鈷薄膜製備……………………………………………………….22
3.3.4  氧化鈷感測層奈米結構製備………………………………………….23
3.3.5  奈米結構之形貌分析－SEM………………………………………….26
3.3.6  奈米結構之成份分析－XRD…………………………………………27
3.3.7  氧化鈷感測器之靈敏度量測與比較………………………………….27

第四章  實驗結果與討論
4-1  實驗參數之比較與決定……………………………....………...…..……….29
   4-1-1  濺鍍參數之選擇………………………………....………...………….29
4-1-2  不同電極製備法之比較………………………………………………33
4-1-3  不同溫度加熱之試片形貌分析………………………………………37
4-2  氧化鈷奈米結構之形貌分析……………………………………..…………40
4-2-1  以300℃加熱三小時之氧化鈷薄膜形貌……………………….…….40
4-2-2  以300℃加熱二十四小時之氧化鈷薄膜形貌………………….…….46
4-2-3  以300℃加熱四十八小時之氧化鈷薄膜形貌………………….…….51
4-2-4  不同實驗參數之形貌比較結果………………………………………57
4-3  氧化鈷奈米結構之成分分析…………………………………………..…....60
4-3-1  as deposit鈷薄膜之XRD分析………………………………………..60
4-3-2  以300℃加熱三小時之氧化鈷薄膜成份分析………………….…….63
4-3-3  以300℃加熱二十四小時之氧化鈷薄膜成份分析…………….…….64
4-3-4  以300℃加熱四十八小時之氧化鈷薄膜成份分析…………….…….66
4-3-5  相同氣氛不同加熱時間之氧化鈷薄膜成份分析……………………68
4-3-6  以500℃加熱二十四小時之氧化鈷薄膜成份分析………………….72
4-3-7  不同實驗參數之成分比較結果………………………………………72
4-4  具奈米結構之氧化鈷氣體感測器之性能分析………………………….….75
4-4-1  不同參數製備之氧化鈷感測器靈敏度之比較………………………75
4-4-2  不同參數製備之氧化鈷感測器活化能之比較………………………81

第五章  結論………………………………………………………………………..86

                                

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