研究生: |
何宏哲 Hung-Che Ho |
---|---|
論文名稱: |
多孔矽與氧化鋅堆疊的光致發光研究 The Study of Photoluminescence from the Stacks of Porous Silicon and Zinc oxide |
指導教授: |
周賢鎧
Shyankay Jou |
口試委員: |
鄭偉鈞
Wei-chun Cheng 胡毅 Yi Hu |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 材料科學與工程系 Department of Materials Science and Engineering |
論文出版年: | 2005 |
畢業學年度: | 93 |
語文別: | 中文 |
論文頁數: | 66 |
中文關鍵詞: | 光致發光 、氧化鋅 、多孔矽 |
外文關鍵詞: | zinc oxide, photoluminescence, porous silicon |
相關次數: | 點閱:308 下載:7 |
分享至: |
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
本論文之目的是在多孔矽上堆疊氧化鋅,藉由結合多孔矽與氧化鋅兩種發光材料,以研製出能發白光的機構。
多孔矽以陽極蝕刻法生成,基材為n型矽晶片,當氫氟酸濃度在12%,照度維持2.5 mW/cm2,電流密度首先使用115 mA/cm2蝕刻1 min之後,緊接著調降電流密度到30 mA/cm2蝕刻30 min,實驗結果發現可以得到最大的光致發光強度,其波峯位置在波長680 nm處。
為避免多孔矽發光受高溫影響,所以氧化鋅以化學沉澱法生成,使用莫耳濃度1M硝酸鋅溶液,氨水為沉澱劑,反應形成不同的前驅物Zn(OH)2或[Zn(NH3)4]2+再塗佈於矽基材上,溫度150℃時間6小時進行熱分解,光致發光(PL)量測結果發現以Zn(OH)2與[Zn(NH3)4]2+生成之氧化鋅波峯位置分別位於波長502 nm及 481 nm。
多孔矽與氧化鋅堆疊之後的光致發光(PL)量測,顯示發光區域涵蓋全可見光區400 nm ~ 750 nm,用紫外光照射可直接觀察到發白光情形。
Abstract
The goal of this study is to synthesize materials which emit white light. Porous silicon and zinc oxide are selected as luminescent materials.
We first prepare porous silicon as substrate. Porous silicon is formed from anodization etching of a n-type Si wafer in 12% HF with a current density of 30 mA/cm2 for 30min. The porous silicon can be found to have high PL intensity centered around 680 nm.
Zinc oxide coatings are prepared by precipitation method using the solution of 1M Zn(NO3)2 and NH4OH. The precursor solution forms transitional phases of Zn(OH)2 or [Zn(NH3)4]2+ then transformed to zinc oxide after heating it at 150℃ for 6 hr. The zinc oxide coatings from pyrolysis of Zn(OH)2 or [Zn(NH3)4]2+ emit light at 502 nm and 481 nm, respectively.
Stacks of ZnO and porous Si are fabricated for white light emission. The result of PL measurement shows all visible light bands are covered.
參考文獻
1. A. Uhlir, “Electrolytic shapping of germanium and silicon,” Bell System Tech. J.,Vol. 35, pp.333 (1956)
2. K. Barla, G. Bomchil, R. Herina, and J.C. Pfister, J. Cryst. Growth., Vol. 68, pp.721 (1984)
3. I. M.Young, M. I. J. Beale, and J.D. Benjamin, Appl. Phys. Lett., Vol. 46, pp.1133 (1985)
4. R. L. Smith and S. D. Collins, “Porous silicon formation mechanisms,” J. Appl. Phys., Vol. 71, R1 (1992)
5. V. Lehmann and U. Gösele, “Porous silicon formation: a quantum wire effect,” Appl. Phys. Lett., Vol. 58, pp.856 (1991)
6. M. I. J. Beale, J. D. Benjamin, M. J. Uren, N. G. Chew and A. G. Cullis, J. Cryst. Growth. , Vol. 73, pp.622 (1985)
7. L. N. Aleksandrov and P. L. Novikov, Thin Solid Films, Vol. 330, 102 (1998)
8. R. L. Smith, S. –F. Chuang, and S. D. Collins, J. Electron. Mater., Vol. 17, pp.533 (1988)
9. L. T. Canham, “Silicon quantum wire fabricated by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett., Vol. 57, pp.1046 (1990)
10. J. Lin, L. Z. Zhang, B. R. Zhang, B.Q. Zong and G. G. Qin, “Stable blue light emission from oxidized porous silicon,” J. Phys: Condens Matter, Vol. 6, pp.565 (1994)
11. J. M. Rehm, G. L. McLendon, L. Tsybeskov and P. M. Fauchet, “How methanol affects the surface of blue and red emitting porous silicon,” Appl. Phys. Lett.,
Vol. 66, pp.3669 (1995)
12. H. D. Fuchs, M. Stutzmann, M. S. Brandt, M. Rosenbauer, J. Weber and M. Cardona,
“Visible luminescence from porous silicon and siloxene,” Physica Scripta, T45, pp.309 (1992)
13. A. G. Cullis, L. T. Canham and P. D. J. Calcott, “The structural and luminescence properties of porous silicon,” J. Appl. Phys., Vol. 82, pp.909 (1997)
14. R. P. Vasquez, A. Madhukar and J. A. R. Tanguay, “Spectroscopic ellipsometry and X-ray photoelectron-spectroscopy studies of the annealing behaviour of amorphous Si produced by Si ion-implantation,” J. Appl. Phys., Vol. 58, pp.2337 (1985)
15. D. J. Wolford, B. A. Scott, J. A. Reimer and J. A. Bradley, “Efficient visible luminescence from hydrogenated porous silicon,” Physica B, Vol. 117, pp.920 (1983)
16. S. M. Prokes, O. J. Glembocki, V. M. Bermudez, P. Kaplan, L. E. Friedersdorf and P. C. Searson, “SiHx excitation – an alternative mechanism for porous Si photoluminescence,” Physical Review B, Vol. 45, pp.13788 (1992)
17. M. B. Robinson, A. C. Dillon and S. M. George, “Porous silicon photoluminescence versus HF etching – no correlation with surface hydrogen species,” Appl. Phys. Lett., Vol. 62, pp.1493 (1993)
18. A. G. Cullis and L. T. Canham, “Visible light emission due to quantum size effects in highly porous crystalline silicon,” Nature, Vol. 353, pp.335 (1991)
19. 陳秀蓮, “以化學法製備均一粒徑氧化鋅粉體與發光特性之研究,”國立台灣科技大學材料所碩士論文 (2003)
20. Peter Y. Yu, Manuel Cardona, “Fundamentals of Semiconductors/Physics and Materials Properties,” Springer (1996)
21. Sunglae Cho, Jing Ma, Y. Kim, Y. Sun and John B. Ketterson, Appl. Phys. Lett.,
Vol. 75, pp.2761 (1999)
22. K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt and B. E. Gnade, “Mechanisms behind green photoluminescence in ZnO phosphor powders,”
J. Appl. Phys., Vol. 79, pp.7983 (1996)
23. B. Lin, Zhuxi Fu and Yunbo Jia, “Green luminescent center in undoped zinc oxide films deposited on silicon substrates”, Appl. Phys. Lett., Vol. 79, pp.943 (2001)
24. Jun Chen, Zhaochi Feng , Pinliang Ying, Meijun Li, Bo Han and Can Li, “The visible luminescent characteristics of ZnO supported on SiO2 powder,” Physical Chemistry Chemical Physics, Vol. 6, pp.4473 (2004)
25. A. Van Dijken, E. A. Meukenkamp, D.Vanmaekelbergh and A. Meijerink, J. Lumin., Vol. 87, pp.454 (2000)
26. Y. Shinohara, H. Sarozono, T. Nakajima, S.Suzuki and S.Mishima, J. Chem. Software, Vol. 4, pp.41 (1997)
27. Huijuan Zhou, “Optical and Magnetic Resonance Properties of Ⅱ-Ⅵ Quantum Dots,” Dissertation , Justus-Liebig-Universität Giessen (2002)
28. H. Zhou, H. Alves, D. M. Hofmann, B. K. Meyer, G. Kaczmarczyk, A. Hoffmann and C. Thomsen, “Effect of the (OH) Surface Capping on ZnO Quantum Dots,” Phys. Stat. Sol., Vol. 229, pp.825 (2002)
29. X. D. Gao, X. M. Li, W.D. Yu, “Rapid preparation, characterization, and photolumine -scence of ZnO films by a novel chemical method,” Materials Research Bulletin, MRB 2990 1-8 (2005)
30. R. L. Meek, J. electrochem. Soc., Vol. 118, pp.437 (1971)
31. Z.Gaburro, N. Daldosso and L. Pavesi, “Porous Silicon,” Università di Trento, Italy (2003)
32. Claude Levy-Clement, Abdelghani Lagoubi, Reshef Tenne and Michael Neumann-Spallart, “Photoelectrochemical Etching of Silicon,” Electrochimica Acta, Vol. 37, pp.877 (1992)