本研究以氧化鋅/高分子異質雙層結構製作太陽能電池。探討元件受氧化鋅薄膜厚度、外在環境以及元件在不同的加熱處理步驟等因素對於太陽能電池效率之影響。接著藉由不同官能基自組裝單分子薄膜調整氧化鋅功函數，改變氧化鋅潤濕性，探討對於元件光電轉換效率的影響。實驗結果顯示，以氧化鋅薄膜厚度80nm在手套箱環境中塗佈高分子P3HT，經由兩段加熱處理步驟所製備之太陽能元件，其光電轉換效率為大氣環境中無培養皿覆蓋元件的1.9倍。我們推測其主要原因為氧化鋅經過兩段熱處理步驟提高其結晶性，造成其上所塗佈之P3HT有最佳結構。此外，利用不同官能基SAM分子修飾PN界面(P-N junction)不僅改變表面濕潤性及表面功函數等性質外，當使用負偶極SAM時，由於氧化鋅/高分子Energy offset相接近，導致電子電洞再結合率較高，元件曲線為非二極體圖形，而以正偶極官能基為H單分子層薄膜修飾氧化鋅薄膜，能改變氧化鋅/高分子的界面量子井(Energy offset)，而提升開路電壓Voc由0.46(V)至0.49(V)。而以表面官能基為C60單分子薄膜層修飾氧化鋅薄膜後，可造成其上所塗佈P3HT有最佳結構與形貌，並且可使該元件擁有較佳之電洞與電子分離效率，可提升電池之光電轉換效率10%。

This work is focused on ZnO thin film-P3HT bi-layer solar cell. The device performances are modulated with respect to deferent thickness of ZnO thin film,environmental ambient during fabrication, and various sequence of annealing processes. In addition, surface work function of ZnO thin film and surface morphology as well as crystallinity of P3HT are altered by passivation of self-assembled monolayers (SAMs) with different functional groups in between the ZnO and P3HT.Spin coating P3HT on the suitable thickness of ZnO thin film with annealing treatment in the glove box shown an improvement of device efficiency which is 1.9 times higher than the device without petri dish covering. We conclude that the highest PCE is resulted from the higher crystallinity of ZnO which provides optimized morphology and structure of P3HT above. In addition, the open circuit voltage (Voc) of device can be increased from 0.46V to 0.49V by using monolayer with functional group of hydrogen modified zinc oxide. We attribute the enhancement to the modification of energy offset between zinc oxide / polymer interface. On the other hand, the PCE of the device can be 10% enhanced by adjustment of ZnO/P3HT interface with C60–SAM. We attribute the improvement of PCE to better charge separation ability of ZnO/P3HT interface, and the optimized crystallinity and morphology of P3HT on ZnO thin film which affected by C60.

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