本研究以二硫化錸(Rhenium disulfide, ReS2)薄膜為介電層應用於電阻式記憶體，製作Mo/ReS2/Re及Ag/ReS2/Re元件並比較其在電性、傳導機制與切換機制等方面的差異。
Mo/ReS2/Re元件在電性量測時能展現出雙極式的電阻切換行為，須先以較高電壓進行Forming，而後在掃描至負偏壓時 RESET回高電阻態並在正偏壓時 SET至低電阻態。Mo電極直徑為90 μm之元件可循環掃描60次且高低電阻比值(RHRS/RLRS)為7.3倍；而電極直徑為54 μm及37 μm之元件可循環掃描20次且RHRS/RLRS分別可達到83倍及112倍。以上元件在HRS時皆符合Schottky emission而在LRS時則符合Ohmic。在不同電極面積測試中HRS的電阻值會隨電極面積增加而減少，LRS的電阻值則不隨電極面積改變，說明在LRS是藉由導電燈絲來進行傳導。在升溫測試中HRS的電阻值會隨溫度升高而下降，為半導體特性；LRS的電阻值則會隨溫度升高而增加，為金屬特性，計算之α值與硫空缺較為接近，因此推測此元件在LRS時是以硫空缺作為主要導電燈絲路徑。
Ag/ReS2/Re元件在電性量測時也具有雙極式的電阻切換行為，同樣須先以較高電壓進行Forming，掃描至負偏壓時 RESET回高電阻態並在正偏壓 SET至低電阻態。Ag電極直徑為90 μm之元件可循環掃描50次且RHRS/RLRS為3.6倍；而電極直徑為54 μm及37 μm之元件可循環掃描20次且RHRS/RLRS分別可達到12倍及18倍。以上元件在HRS時皆符合Schottky emission而在LRS時則符合Ohmic。在不同電極面積測試中HRS的電阻值會隨電極面積增加而減少；在LRS時電阻值則不隨電極面積改變，說明在LRS是藉由導電燈絲來進行傳導。在升溫測試中HRS的電阻值會隨溫度升高而下降，為半導體特性；LRS的電阻值則會隨溫度升高而增加，為金屬特性，計算之α值與Ag較為接近，因此推測此元件在LRS時是以Ag金屬燈絲作為主要導電燈絲路徑。

This study focus on the application of rhenium disulfide (ReS2) thin films as dielectric layer in resistive memory device. Mo/ReS2/Re and Ag/ReS2/Re devices were fabricated and their electrical properties, conduction mechanisms and switching mechanisms are compared.
The Mo/ReS2/Re device can exhibit bipolar resistive switching behavior and requiring a high voltage for forming first. The RESET process occur at negative bias while the SET process occur at positive bias. The device with a Mo electrode of 90 μm in diameter can switch 60 cycles with RHRS/RLRS of 7.3. The devices with electrode diameter of 54 μm and 37 μm can switch 20 cycles with RHRS/RLRS of 83 and 112, respectively. In HRS, all these devices follow Schottky emission while in LRS follow Ohmic conduction. The resistance in HRS decreased with increasing electrode area, however the resistance in LRS was independent with the electrode area, suggesting that conduction in LRS is through a conductive filament. In the temperature-dependent test, the resistance in HRS decrease with increasing temperature, indicating semiconductor characteristic, while the resistance in LRS increase with increasing temperature, indicating metallic characteristic. The calculated α value is close to the sulfur vacancy, suggesting that the dominant conduction path in the LRS is through sulfur vacancies.
Similarly, the Ag/ReS2/Re device also exhibit bipolar resistive switching behavior and also requiring a high voltage for forming first. The RESET process occur at negative bias while the SET process occur at positive bias. The device with an Ag electrode diameter of 90 μm can scan 50 cycles with RHRS/RLRS ratio of 3.6. The devices with electrode diameter of 54 μm and 37 μm can scan 20 cycles with RHRS/RLRS of 12 and 18, respectively. Similar to the Mo electrode device, the Ag electrode device exhibit Schottky emission in HRS and Ohmic conduction in LRS. The resistance in HRS decrease with increasing electrode area while in LRS the resistance is independent with the electrode area, suggesting conduction through a conductive filament. In the temperature-dependent test, the resistance in HRS decrease with increasing temperature, indicating semiconductor characteristic, while the resistance in LRS increase with increasing temperature, indicating metallic characteristic. The calculated α value is close to Ag, suggesting that the dominant conduction path in the LRS is through Ag metal filament.

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