本實驗使用反應式離子束濺鍍法在矽(100) 基板上沉積氧化鋅掺雜鋁薄膜，利用改變基板溫度、鋁摻雜含量來觀察薄膜特性的改變，分別使用200℃、100℃及室溫來成長薄膜。200℃沉積之晶粒大小最大約為90 nm，但是100℃及室溫摻雜前後皆為非晶結構。200℃成長薄膜在鋁含量為3.2 at. %時將電阻率由未摻雜前的1.40×102 降低至5.0×10-2 Ωcm，而載子濃度與遷移率分別為6.71×1019 cm-3及2.0 cm2V-1s-1，超過鋁濃度極限之後造成電組率的下降是因為晶粒邊界雜質散射增強的關係。100℃電阻率在3.2 at. %時從5.74 降低2.4×10-1 Ωcm 而室溫在1.9 at. %時從3.97 Ωcm降至2.6×10-1 Ωcm。200℃成長在可見光區穿透率有80%以上，無論鋁濃度為何吸收極限都往短波長移動，指出能隙有寬化現象。由PL光譜發現200℃成長薄膜在3.27 eV有強近能隙發光及較弱的缺陷發光，相較之下，AZO的近能隙發光往高能量位移30 meV至3.30 eV是為Burstein-Moss效應。XPS分析可以發現在摻雜鋁之後O1s峰值明顯可以分成兩個高斯訊號峰在530.2 及 531.6 eV，指出鋁摻雜後造成缺陷增加使晶格氧減少。

Al-doped ZnO (AZO) thin films have been deposited on Si(100) substrates by reactive ion beam sputtering deposition at 200, 100 C and room temperatures. The effect of growth temperatures and Al concentrations on the properties of ZnO thin films were investigated. AZO thin films deposited at 200C exhibits a preferred growth orientation along the (002) direction with a grain size of ~ 90 nm, while AZO deposited at 100℃ and room temperatures are amorphous. The resistivity of AZO deposited at 200C decreases from 1.40×102 to 5.0×10-2 Ω cm as Al concentration increases from 0 to 3.2 at. %. At this concentration, the mobility and carrier concentration of AZO thin films are 6.71×1019 cm-3 and 2.0 cm2V-1s-1, respectively. Higher Al concentration causes increase of resistivity, which is due to increased scattering of carrier at grain boundaries. The resistivity of AZO deposited at 100C and room temperature also decreases from 5.74 and 3.97 Ω cm to 2.4×10-1 and 2.6×10-1Ω cm as Al concentration increases from 0 to 3.2 at. % and 1.9 at. %while both increase at higher Al concentration. The transmittance of AZO thin films deposited at 200C at the visible range is larger than 80 %. Regardless of Al concentrations, the absorption edge move to shorter wavelength, indicating increase of bandgap. PL analysis of ZnO deposited at 200C shows strong near band edge emission at 3.27 eV and weak defect related deep level emission. Comparing with un-doped ZnO, the near band edge emission energy of AZO blue-shifts by 30 meV to 3.30 eV, which is due to Burstein-Moss shift. XPS analysis of AZO indicates that the core level spectrum of O1s can be deconvoluted into two Gaussians centered at 530.2 and 531.6 eV, indicating increased amount of oxygen atoms located at oxygen deficient regions due to the incorporation of Al.

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