A novel synthesis and growth method achieving vertically aligned zinc oxide (ZnO) nanowires on silicon (Si) substrate is demonstrated. The growth direction of the ZnO nanowires is determined by the crystal structure of the ZnO buffer layer, which is formed by the ion beam sputtered method (IBSD). The vertically aligned ZnO nanowires on Si substrate are realized from the appropriately thick ZnO buffer layer by a vapor phase transport mechanism. In this process, the vertically aligned ZnO were prepared by the process of high purity ZnO powder is mixed with graphite powders, which are filled into the boat. The Si substrate was placed on the boat, the Si substrate and powder distance was 2mm. The boat was placed in a center of furnace at a high temperature of 1000°C.
Followed by prepared the rare earth elements such as Nd, Er, Pr contained ZnO nanowires, which has unique optical, electrical, and morphological properties be capable of doping with rare earth elements. Among the rare earth, Nd is one of the most widely used element for high power laser applications. The Nd doped lasers have recently been utilized in inertia confined fusion experiments. An intrinsic issue of Nd doped glass materials is the low thermal conductivity that usually leads to thermal degradation under high repetition rate high power laser operation. The undoped ZnO nanocolumns were soaking for 2 hours into neodymium acetate solution, erbium, and praseodymium solutions, followed by the sample were placed on the ceramic boat, which is placed at the centre of a horizontal quartz tube furnace boat and annealed at 900°C for 8 hrs. The rare earth elements containing ZnO nanocolumns were studied by field-emission electron microscopy (FE-SEM), X-ray diffraction (XRD), XPS and photoluminescence (PL) study.

A novel synthesis and growth method achieving vertically aligned zinc oxide (ZnO) nanowires on silicon (Si) substrate is demonstrated. The growth direction of the ZnO nanowires is determined by the crystal structure of the ZnO buffer layer, which is formed by the ion beam sputtered method (IBSD). The vertically aligned ZnO nanowires on Si substrate are realized from the appropriately thick ZnO buffer layer by a vapor phase transport mechanism. In this process, the vertically aligned ZnO were prepared by the process of high purity ZnO powder is mixed with graphite powders, which are filled into the boat. The Si substrate was placed on the boat, the Si substrate and powder distance was 2mm. The boat was placed in a center of furnace at a high temperature of 1000°C.
Followed by prepared the rare earth elements such as Nd, Er, Pr contained ZnO nanowires, which has unique optical, electrical, and morphological properties be capable of doping with rare earth elements. Among the rare earth, Nd is one of the most widely used element for high power laser applications. The Nd doped lasers have recently been utilized in inertia confined fusion experiments. An intrinsic issue of Nd doped glass materials is the low thermal conductivity that usually leads to thermal degradation under high repetition rate high power laser operation. The undoped ZnO nanocolumns were soaking for 2 hours into neodymium acetate solution, erbium, and praseodymium solutions, followed by the sample were placed on the ceramic boat, which is placed at the centre of a horizontal quartz tube furnace boat and annealed at 900°C for 8 hrs. The rare earth elements containing ZnO nanocolumns were studied by field-emission electron microscopy (FE-SEM), X-ray diffraction (XRD), XPS and photoluminescence (PL) study.

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