本論文以含氮化物粉體的方式將N摻雜在IGZO前驅粉體中，並利用本實驗的真空熱壓機壓製而成N摻雜IGZO (IGZNO)靶材，經濺鍍獲得以N原子取代O原子的位置獲得N摻雜IGZO薄膜，期望藉由IGZNO薄膜中的N來提升其薄膜的載子遷移率及薄膜穩定性。實驗中以不同的組成比例製作不同的IGZNO靶材，並在相同濺鍍條件下以RF磁控濺鍍機沉積IGZNO薄膜，找出最佳靶材組成比例的IGZNO靶，並探討其在不同氧氣及氬氣的比例條件對IGZNO薄膜的電性及光學性質造成的影響。本實驗中我們利用EDS、SEM、XRD、AFM、UV-Vis及霍爾效應量測儀來分析薄膜的特性。
第一部份我們將傳統IGZO靶的In2O3、Ga2O3、ZnO 三種金屬氧化物以金屬In、In2O3、金屬Ga、Ga2O3、GaN及金屬Zn及金屬Sn進行替代並進行球磨以均勻混合，目的為利用較低溫的製程且以氮化物(GaN)的方式將N摻雜進入IGZO靶材中，依照不同的成分比例製作靶材，並在相同條件下進行濺鍍。發現當IGZNO-3靶材組成的莫耳比例為In : In2O3 : Ga : Ga2O3 : GaN : Zn : Sn = 35 : 10 : 12 : 20 : 10 : 8 : 5時，其沉積的薄膜組成In : Ga : Zn的比例接近1 :1 :1，符合InGaZnO4的原子比例，其薄膜表面形貌平坦且結構緻密，表面的方均根粗糙度僅0.422 nm。在電性方面，因其結晶態為非晶相，無晶界阻礙載子的移動，故載子遷移率為最高；在光學性質方面，其在可見光波長範圍之平均穿透率達95 %。
第二部份我們在固定同一IGZNO-3靶材在沉積溫度300 oC、氣體O2/Ar流量比分別為0/20、5/15、10/10、15/5、20/0的條件下，以濺鍍功率80 W、沉積30分鐘形成IGZNO薄膜，實驗發現，隨著O2的比例增加，薄膜中的In含量會減少，而Zn含量隨之增加，Ga含量則無明顯變化，而N含量在O2/Ar = 10/10時達最高。當O2/Ar = 10/10時，其薄膜表面較平坦且無明顯顆粒狀組織，表面的均方根粗糙度低於0.5 nm，而在XRD繞射圖譜中也無明顯繞射峰。在電性方面，以O2/Ar = 10/10濺鍍的薄膜特性較優異，其載子濃度為1015 cm-3，遷移率為47.08 cm2V-1s-1；而在光學性質方面，所有薄膜在可見光波長範圍之穿透率皆達85 %以上。

In this research, nitrogen-doped IGZO thin film was successfully deposited by RF reactive sputtering with IGZNO targets. The targets were made by hot pressing machine in our laboratory. We expect the replacement of O atom by N atom to improve the carrier mobility and electrical stability of IGZNO film. To optimize the best composition for the target, IGZNO targets with different compositions were made and deposited by RF magnetron under the same sputter conditions. Furthermore, to optimize the best atmosphere for the IGZNO target, we chose the IGZNO target with the best composition to be sputtered at different atmospheres in the chamber at different ratios of oxygen and argon. In this work, all films were analyzed by EDS, SEM, XRD, AFM, UV-Vis, and Hall effect measurement.
In2O3, Ga2O3, and ZnO mixed for the traditional IGZO target were replaced by In metal, In2O3, Ga metal, Ga2O3, GaN, Zn metal, and Sn metal to be uniformly mixed. The purpose is to make the target at lower temperature and dope N into the IGZO target using GaN for N doping in IGZO films. We deposited all the IGZNO films by RF magnetron under the same sputter condition with different IGZNO targets. When the molar percentages for the composition of the IGZNO-3 target are 35 : 10 : 12 : 20 : 10 : 8 : 5 for In : In2O3 : Ga : Ga2O3 : GaN : Zn : Sn, the In:Ga:Zn ratio of film composition is close to 1:1:1, which corresponds to the InGaZnO4 phase. The surface of the IGZNO-3 film is flat and dense, and the root-mean-square roughness of the surface is only 0.422 nm. There were no X-ray peaks in XRD analysis, which indicates an amorphous IGZNO phase. Because of the amorphous phase of IGZNO-3, there is no grain boundary to hinder the movement of carriers and the carrier mobility can reach the highest among films from all the targets. In terms of optical properties, the average transmittance in the visible light range was 95 %.
The IGZNO-3 target was sputtered at different atmospheres of O2/Ar = 0/20, 5/15, 10/10, 15/5, and 20/0, respectively. As the proportion of O2 increased, the In content of the film decreased, while the Zn content increased. The Ga content did not change significantly while the proportion of O2 in the chamber varied. The N content reached the highest at O2/Ar = 10/10. The surface was very flat and the structure of the film was dense without obvious cracks. The root-mean-square roughness of the surface was less than 0.5 nm. There waere no obvious diffraction peaks in the XRD diffraction spectrum. In the Hall effect measurement, the film has better electrical properties. The carrier concentration of IGZNO-10O2 was 1015 cm-3 and its mobility reached 47.08 cm2V-1s-1. In terms of optical properties, the average transmittance in the visible light range was above 85 %.

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