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研究生: 陳國照
Guo-zhao Chen
論文名稱: 熱滯留層輔助結晶之薄膜電晶體元件研發
Development of HREC-TFT device
指導教授: 葉文昌
Wen-chang Yeh
口試委員: 吳忠幟
Chung-chi Wu
黃鶯聲
Ying-sheng Huang
學位類別: 碩士
Master
系所名稱: 電資學院 - 電子工程系
Department of Electronic and Computer Engineering
論文出版年: 2005
畢業學年度: 93
語文別: 中文
論文頁數: 65
中文關鍵詞: 準分子雷射退火熱滯留層輔助結晶熱鎢絲雙閘極薄膜電晶體
外文關鍵詞: HREC, Excimer laser annealing, Dual gate TFT, Hot-wire
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  • 我們已經成功利用熱滯留層輔助結晶技術,經由準分子雷射退火後,可以實現全部充滿橫向成長寬度14um長的矽島。然後我們結合全部橫向長晶的矽島和雙閘極的架構去製造高性能的薄膜電晶體。
    另外我們成功地開發了一組不須射頻電漿產生器而且也可以達到氫化效果的機台—《熱鎢絲氫化機台》,我們利用最佳的氫化參數對金氧半元件進行氫化,而氫化後的介面態位密度有明顯的降低,而且有更佳的ON/OFF電流比、次臨界擺幅。


    We have successfully used heat retaining layer enhanced crystallization technology when excimer laser annealing we can achieve that the fully lateral grain growth silicon island of 14um long. Then we combine the fully lateral grain growth silicon island and dual gate structure to make high performance thin film transistor.
    In addition, we have successfully developmental a machine that has hydrogenate impression on TFT without RF generator —《HOT-WIRE HYDROGENATOR》. We used the best hydrogenated parameter to hydrogenate metal-oxide-semiconductor device. Then we not only clearly reduce the density of interface state but also improve ON/OFF current ratio and subthreshold swing.

    第一章 序論 1-1 前言.…………………………………………………… [1] 1-2準分子雷射結晶化(Excimer laser crystallization)…….. [3] 1-3 次世代準分子雷射結晶化技術……………………… [6] 1-4 研究背景……………………………………………….. [9] 1-4 研究目標……………………………………………….. [10] 1-5論文流程……………………………………………….. [11] 第二章 氫化技術 2-1 前言……………………………………………………. [12] 2-2 研究背景………………………………………………. [12] 2-3 研究目標………………………………………………. [14] 2-4 研究方法………………………………………………. [15] 2-5 實驗結果與討論………………………………………. [21] 2-6 元件特性之氫化改善……..…………………………... [29] 2-7 本章結論……………………………………………….. [33] 第三章 新摻雜技術的開發 3-1 前言…………………………………………………….. [34] 3-2 研究背景……………………………………………….. [34] 3-3 研究方法……………………………………………….. [38] 3-4實驗結果與討論………………………………………... [40] 3-5本章結論…………………………………………….…. [45] 第四章 熱滯留層輔助結晶之薄膜電晶體製作 4-1 前言……………………………………………………. [46] 4-2研究方法……………………………………………….. [47] 4-3 雙閘極結構薄膜電晶體製作……………………….. [51] 4-4實驗結果與討論……………………………………...... [57] 4-5本章結論……………………………………………….. [59] 第五章 結論…………………………………………………… [60] 參考文獻…………………………………………………….…. [62] 著作…………………………………………………….………... [65]

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