本論文，對半導體奈米材料研究分為三個部分，分別為InSb 奈米線之金屬氧化物半導體場效電晶體(Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET)之性能、對共晶微結構Sb-InSb奈米線之分析以及InSe奈米線光感性能之研究。
第一部分，根據之前的文獻，已有共晶金屬之分節微結構奈米線的出現，而共晶Sb-InSb奈米線可被陽極氧化鋁模板(Anodic aluminum oxide, AAO)模板輔助壓力鑄造法製備也已成功驗證。其可批量性的生產出的大量的分節微結構之Sb-InSb奈米線。檢測後可得知，奈米線中同時存在了菱形(rhombohedral)結構Sb及纖鋅礦(zinc-blende)結構InSb。透過兩者接面的能帶結構圖，可見其存在一內建電場於介面，理論上它可以有效的改善InSb部分的的電子遷移率、加速載子對的分離，使得其作為MOSFET的開關更為迅速、俐落。
第二部分，將InSb塊材透過AAO輔助壓力鑄造法合成InSb奈米線，並將這些奈米線藉由聚焦離子束程序製備為MOSFET元件。這些InSb奈米線元件將在不同的源極及閘極電壓的作用下進行電性質的測量，其結果顯示出了InSb奈米線具有3.27x10-1 cm2 V-1s-1電子遷移率及1.7x10-9 mS的跨導數值。並且在Id-Vg量測中，以AAO模板輔助壓力鑄造法合成的InSb奈米線在相對小的源極偏壓下顯示出了可見的開、關狀態，但內部高密度的電荷陷阱能態使其開啟後就無法關閉。
第三部分，對AAO模板輔助壓力鑄造合成InSe奈米線之光感性能的探討，透過掃描式電子顯微鏡(Scanning Electron Microscope, SEM)、能量色散X射線譜(Energy-dispersive X-ray spectroscopy, EDS)與拉曼光譜分析(Raman Spectra)可以確認所得之InSe奈米線為β相，奈米線的平均長度偏短，約落於1 μm到5 μm之間，而這方面還有待改善。再者，InSe奈米線在全可見光區皆存在光感響應並在，但量測所得之power-law幕次皆顯出接近0.5的數值，意旨InSe能隙中存在暫存能階。然而，InSe奈米線表現出了傑出的光電轉換能力，其響應值(Responsivity)及外部量子效率(External Quantum Efficiency, EQE跟別高達1529.69 A/W及4.692x105 %，顯示AAO模板輔助壓力鑄造合成InSe奈米線有著卓越的光電感測能力。

In this thesis, the investigation of semiconductor nanomaterials can be divide into three parts, the study of microstructure of eutectic Sb-InSb nanowires, the property of InSb nanowires MOSFET device, and the research of the InSe nanowire photodetector.
For the first part, according to the literature, the eutectic microstructure nanowires were achieved by metal eutectic material. In addition, the eutectic Sb-InSb nanowires were successfully manufactured by the Anodic aluminum oxide (AAO) template-assisted die-casting method and it can fabricate such large amount in once die-casting operation. Moreover, the characterization shows that there’s rhombohedral Sb and zinc-blende InSb can co-exist in a nanowire. Furthermore, via the interface band diagram between Sb and InSb, it reveals a built-in electric field. In theory, this built-in electric field can effectively improve the mobility and enhance the carriers separating efficiency, making the switching rapidly and swiftly.
For the second part, the InSb nanowires were manufactured by the AAO template-assisted die-casting method, then the as-prepared InSb nanowires were built into MOSFET device via FIB process. These devices were measured the properties under varied source and gate applied, and the results shows that the InSb nanowires represent as 3.27x10-1 cm2 V-1s-1 electron mobility and 1.7x10-9 mS transconductance. The AAO template-assisted die-casting InSb nanowires reveal a clear on-off states in the Id-Vg measurements. But the high concentration of the trap states in the InSb nanowire makes the device cannot be turned into off-state.
For the third part, the research of the InSe nanowire photodetector, it can verify the InSe nanowires exhibit as β phase via the SEM/EDS and Raman spectra results. But the InSe nanowires reveal that the length of the nanowires is short, about the range of 1 μm to 5 μm. This issue needs to be fixed, urgently. Moreover, the InSe photodetector shows a distinct photoresponse in whole visible light range. The power-law indexes reveal as close to 0.5, indicating there is indeed a meta-state within the InSe bandgap. However, the InSe nanowire exhibits a remarkable photoelectric conversion capability. The responsivity and External Quantum Efficiency (EQE) represent a value high to 1529.69 A/W and 4.692x105 %. This results imply that the AAO template-assisted die-casting InSe nanowires have an extraordinary photosensing capability.

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