本研究利用反應式濺鍍沉積摻鈷類鑽碳(Co-DLC) 薄膜，並將Co-DLC薄膜在350℃進行大氣退火30-90分鐘，得到Co、CoO、Co3O4和DLC組成之CoOx-DLC薄膜，藉由SEM、RAMAN、XRD、四點探針進行分析，並將Co-DLC及CoOx-DLC薄膜應用於葡萄糖感測器和過氧化氫感測器。
本實驗的葡萄糖感測器結果，在Co-DLC薄膜方面，乙炔流量0.2 sccm的電極之靈敏度為74.3 μAmM-1cm-2，最低檢測極限為0.3 mM；在CoOx-DLC薄膜方面，在大氣退火45分鐘的電極於葡萄糖感測器最好的靈敏度為314.3 μAmM-1cm-2，最低檢測極限為0.259 mM。因導電性佳的金屬鈷、DLC的石墨化與有優異電催化活性的氧化鈷互相結合，CoOx-DLC靈敏度較Co-DLC高。
本實驗的過氧化氫感測器結果，在Co-DLC薄膜方面，乙炔流量0.2 sccm的電極之靈敏度為82.9 μAmM-1cm-2，最低檢測極限為1.66 mM；在CoOx-DLC薄膜方面，在大氣退火45 分鐘的電極於過氧化氫感測器有最好靈敏度為331.4 μAmM-1cm-2，最低檢測極限為0.65 mM。

In this study, cobalt-doped diamond-like carbon (Co-DLC) thin films were prepared by reactive sputtering. The Co-DLC films were annealed at 350 °C for 30-90 min in air, and finally produced CoOx-DLC composite thin films comprising Co, CoO, Co3O4 and DLC. Experiment results showed that the annealing time will strongly affect the structure of the final product. SEM, Raman, four-point probe, and X-ray diffractometer were used to analyse the properties of the Co-DLC and CoOx-DLC thin films. These Co-DLC and CoOx-DLC thin films materials were applied in glucose sensor and H2O2 sensor.
The glucose sensor using Co-DLC films prepared under 0.2 sccm C2H2 as the electrode had the sensitivity of 74.3 μAmM-1cm-2 and LOD of 0.3 mM. Using CoOx-DLC films annealed for 45 min in air as the electrode had the best sensitivity of 314.3 μAmM-1cm-2 and LOD of 0.259 mM. The electrochemical behavior is attributed to the combination of the good conductivity of metallic Co , graphitization of the DLC films and the outstanding electro-catalytic activity of cobalt oxides. The experiment results showed that the sensitivity of CoOx-DLC electrode is better than Co-DLC electrode.
The performance of H2O2 sensor using Co-DLC films prepared under 0.2 sccm C2H2 as the electrode of H2O2 sensor had the sensitivity of 82.9 μAmM-1cm-2 and LOD of 1.66 mM. Using CoOx-DLC films annealed for 45 min in air as the electrode had the best sensitivity of 331.4 μAmM-1cm-2 and LOD of 0.65 mM.

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