在此篇研究中，利用熱蒸鍍法經由VLS及VS成長機制在爐管內擺放鍍上金膜的矽基板上成長氧化鋅奈米線，而氧化鋅粉混合碳粉當作前驅物。藉由控制成長溫度、前驅物溫度、成長壓力、前驅物的量、成長時間、成長位置、金膜厚度以及載流氣體，氧化鋅奈米線會長出多元的狀態。更重要的是金催化劑並沒有在氧化鋅奈米線的尾端底部被觀察到，進一步的細節分析發現了金催化劑原來在奈米線與基板的介面處。因此我們提出了一個氧化鋅奈米線成長機制為結合VLS成長與VS成長。氧化鋅外觀形貌利用場發射掃描式電子顯微鏡來做觀察，晶體結構則經由X光繞射和穿透式電子顯微鏡來做鑑定，光學性質從紫外光-可見光光譜儀以及陰極發光光譜儀得知。氧化鋅奈米線的振動模式則是透過拉曼分析來得知，最後電性質則是利用製作元件來量測，從量測的結果算出導電率介在導體的導電率範圍而不是半導體的範圍，原因是因為離子轟擊所造成的效應。

In this study, ZnO nanowires were fabricated on Si coated with gold catalyst by thermal evaporation method via the vapor-liquid-solid (VLS) and vapor-solid (VS) mechanism in a furnace. Mixed zinc oxide powder and graphite powder was used as source. By controlling the growth temperature, source temperature, growth pressure, source amount, growth time, growth position, gold film and carrier gas, ZnO nanowires had been grown a variety of condition. More importantly, the gold catalyst was observed not at the tip ends of the ZnO nanowires. Based on the detailed analysis, we found the catalyst was at the interface between the nanowires and the underlying substrate. Therefore, we proposed a growth mechanism which is composed of VLS growth and VS growth. The morphology of ZnO nanowires were observed by field-emission scanning electron microscope (FE-SEM), and the crystal structure was characterized by x-ray diffractometer (XRD), and transmission electron microscope (TEM). The optical property of ZnO nanowires was obtained by ultraviolet-visible (UV-vis) reflectance spectrum and cathodoluminescenece (CL) spectrum. The vibration mode of ZnO nanowires was obtained by Raman analysis of ZnO nanowires. The electrical property was measured by making device at the last. The result of conductivity is at the range of conductor not semiconductor due to the effect of ion bombardment.

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