本論文乃以未來世代高效率矽晶太陽能電池的技術發展為議題，針對矽晶太陽能電池製作可能的矽晶異質接合，依據實驗室既有的以本質氫化非晶矽為鈍化層的矽晶異質接合太陽能電池η = 19.6 %、Voc = 690 mV、Jsc = 39.1 mA/cm2的技術水平，探討以氫化非晶氧化矽作為矽晶異質接合鈍化層的效應。將本質非晶矽層改為含有部分氧化矽的a-SiOx:H避免了本質層在矽晶界面結晶化的現象。藉由沉積雙面30 nm厚的a-SiOx:H薄膜鈍化n形單晶矽晶片後得到最佳晶片有效載子生命週期高達2610 μs，暗示開路電壓744 mV，表面載子複合速率5.4 cm/s。以此最佳化的條件製作本質層於矽晶異質接合太陽能電池的實驗，發現隨著a-SiOx:H薄膜厚度由8 nm下降為4 nm時，元件開路電壓略為下降到686 mV，但填充因子明顯上升到68.9 %，光電轉換效率達16.3 %。

Based on a technique status of Si heterojunction (SHJ) solar cell using hydrogenated amorphous silicon as the passivation layers, we extracted the key factors affecting the surface passivation properties of the SHJ. To avoid epitaxial growth of Si on Si wafer, hydrogenated amorphous silicon oxide (a-SiOx:H) has been applied to replace the intrinsic a-Si:H layer of the SHJ solar cells. Through passivating wafer surface by double-sided a-SiOx:H i-layers, a very high effective lifetime of 2610 μs(surface recombination velocity = 5.4 cm/s.) were established.
We found that fill-factor and current density increase dramatically as decreasing the passivation layer thickness of a-SiOx:H. Cell open circuit voltage of 686 mV, fill factor of 68.9 % and cell efficiency of 16.3 % were achieved when the passivation layer thickness is 4 nm.

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