本論文研究內容分為三大部分：SnS2奈米片的成長與結構分析及退火前後電性變化及退火參數的討論。第二部分為不同組份的GaSb奈米線之製備與結構分析、探討退火對於異質結構的擴散情形及黃光製程上對應的量測結果與狀況。第三部分為SnS奈米線之製備與結構分析及其光電性質、退火參數之結果與討論。
第一部份，SnS2奈米片使用S和SnI2粉末透過化學氣相傳輸(CVT)方法成長，利用電子束微影製程及蒸鍍系統製備元件，對元件進行變溫實驗以計算出實際量測的蕭特基能障，並與理論值進行對比，實際值約為0.258 ± 0.034 eV，仍與理論值的0.34 eV有著很大的誤差，此結果與材料的厚度、形貌以及電極接觸界面有著很大的關連。另外，對材料進行不同快速熱退火 (RTA) 條件的試驗，讓鎳擴散進入材料中並形成組份不同的異質結構，探討退火熱處理對於材料結構改變及電流的貢獻，其中在350度15秒的條件中鎳原子部份擴散進入材料形成異質結構，且發現材料仍保持半導體特性並且電流具有明顯提升。
第二部分，GaSb奈米線透過陽極氧化鋁(AAO)模板搭配真空壓鑄系統成功製備出，並且透過組份中的高度可調控性，成功製備出Ga:Sb = 1:1和Ga:Sb = 7:3莫耳比的GaSb奈米線。另外，透過對於Ga0.7Sb0.3進行不同條件之退火熱處理，在奈米線中發現不同組份的異質結構，其中包含了Ga-rich和Sb-rich組份，對比不同退火條件的linescan結果，在400度12小時的退火條件下Ga和Sb擴散的情況明顯更激烈，有著更高的Sb組份以及更緊密的異質結構。透過電子束微影製程及蒸鍍系統製備出GaSb奈米線光感測器，在650 nm雷射之激發下，表現出7.24×104 A/W之responsivity、1.38×107 % 之EQE以及1.28×1013 Jones之detectivity。Ga0.7Sb0.3奈米線元件製備，透過黃光微影製程及蒸鍍系統。元件的SEM影像中明顯可看出奈米線與某物質發生反應導致不連續的情況，透過實驗推測Ga0.7Sb0.3奈米線異質結構中之Sb-rich組份會與黃光顯影液(鹼性)發生反應，直接導致了電性量測結果中的低電流。
第三部分，SnS奈米線透過AAO模板輔助真空壓鑄系統被成功製備，因為其化學穩定性高，在黃光元件製備與蝕刻過程上並未出現材料表面受到反應的情形，透過405 nm、450 nm、520 nm、650 nm以及780 nm雷射之激發下，可在520 nm得到4.2×104 A/W之光響應、9.8×106 %之外部量子轉換效率以及 4.38×1013 Jones之比探針率，並且有著29 ms和31.04 ms的上升和下降時間。另外，SnS奈米線在金屬氧化物半導體場效電晶體(MOSFET)的量測中，在Vd=1.0 V，Vg= -10‒40 V下得到1.23×10-9 S的transconductance以及0.831 cm2/V⋅s的載子遷移率。為了確認SnS奈米線在酸鹼溶液中蝕刻的反應性，採用2 M NaOH蝕刻與H2Cr2O7溶液對SnS (Sn3S4)塊材進行蝕刻，蝕刻後的SEM影像與EDS分析都證實SnS(Sn3S4)有著高化學穩定性，並沒有受到蝕刻液影響而改變組份。

The research can be divided into three parts: the growth and structural analysis of SnS2 nanoflakes, the characterization of electrical properties before and after annealing, and discussions on annealing conditions. The second part involves the preparation and structural analysis of different compositions of GaSb nanowires, investigating the diffusion of heterostructures under annealing conditions, and corresponding electrical measurements via photolithography processes. The third part focuses on the preparation, structural analysis, optoelectronic properties measurement, and annealing conditions of SnS nanowires.
In the first part, SnS2 nanoflakes were grown using S and SnI2 powder via chemical vapor transport (CVT) method. E-beam lithography and thermal evaporation were employed to fabricate electronic devices. Varied temperature test was conducted to calculate the actual measured Schottky barrier height of 0.258 ± 0.034 eV compared to the theoretical value of 0.34 eV. This discrepancy was found to be associated with material thickness, morphology, and electrode contact interface. Additionally, rapid thermal annealing (RTA) experiments were conducted under various conditions to facilitate Ni diffusion into the material, forming heterostructures. Notably, at 350 °C for 15 s, Ni atoms partially diffused into the material, forming heterostructures. The material maintained its semiconductor properties, exhibiting significantly improved electrical currents.
In the second part, GaSb nanowires were successfully prepared using anodic aluminum oxide (AAO) template-assisted vacuum die-casting, allowing high adjustability of composition within the nanowires. Ga:Sb ratios of 1:1 and 7:3 were achieved. Different annealing conditions on Ga0.7Sb0.3 nanowires revealed heterogeneous structures with Ga-rich and Sb-rich compositions. Linescan analysis showed intense Ga and Sb diffusion at 400 °C for 12 hr annealing condition, resulting in higher Sb composition and denser heterostructures. GaSb nanowire photodetectors exhibited R= 7.24×104 A/W, EQE=1.38×107 %, and D*= 1.28×1013 Jones at 650 nm laser exposure. In the Ga0.7Sb0.3 NWs PHL device, revealed discontinuities caused by reactions with certain substances. Experimental evidence confirmed reactions between Sb-rich components in Ga0.7Sb0.3 nanowire heterostructures and alkaline developer, leading to decreased electrical performance.
The third part involved the successful preparation of SnS nanowires using AAO template-assisted vacuum die-casting, demonstrating high chemical stability during photolithography and etching processes. Under exposure from 405 nm, 450 nm, 520 nm, 650 nm, and 780 nm lasers, the nanowires exhibited R= 4.2×104 A/W, EQE= 9.8×106 %, D*= 4.38×1013 Jones, and showed rise and fall times of 29 ms and 31.04 ms, respectively at 520 nm. In MOSFET measurements, the SnS nanowires displayed Gm= 1.23×10-9 S and μ= 0.831 cm2/V⋅s at Vd=1.0 V and Vg= -10‒40 V. Chemical stability experiments involving etching in 2M NaOH and H2Cr2O7 solutions confirmed the high chemical stability of SnS, remaining unchanged in composition after etching. To confirm the reactivity of SnS nanowires to etching in acidic and alkaline solutions, etching was performed using 2 M NaOH and H2Cr2O7 solutions on SnS (Sn3S4) bulk material. SEM imaging and EDS analysis conducted after etching confirmed the high chemical stability of SnS (Sn3S4), showing no alteration in composition due to the etching liquids.

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