快速熱退火於矽晶碇線鋸加工之製程影響研究｜國立臺灣科技大學博碩士論文系統

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研究生：	鄭守智 Shou-Chih Cheng
論文名稱：	快速熱退火於矽晶碇線鋸加工之製程影響研究 Effects on RTA Method for Wire Sawing Process of Silicon Ingot
指導教授：	陳炤彰 Chao-Chang, Chen 鍾俊輝 Chun-Hui, Chung
口試委員:	趙崇禮 Choung-Lii, Chao
學位類別：	碩士 Master
系所名稱：	工程學院 - 機械工程系 Department of Mechanical Engineering
論文出版年：	2012
畢業學年度：	100
語文別：	中文
論文頁數：	204
中文關鍵詞：	複線式線鋸切割、太陽能、矽晶基板、快速熱退火、次表面破壞
外文關鍵詞：	multi-wire sawing process, solar cell, silicon substrate, RTA, subsurface damage
相關次數：	點閱：435 下載：9
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受到地球能源日漸缺乏及環境保護意識崛起，京都議定書也強烈限制各國的二氧化碳排放量。因此潔淨的再生能源越來越受到重視，其中太陽能更為研發重點之一，矽晶基板所使用之單晶、多晶基板主要製作技術為複線式線鋸切割製程(Multi-wire sawing process)。本研究目的在於發展快速熱退火（Rapid thermal annealing, RTA）方法及實驗設備應用於線鋸切削製程成品中以探討材料改質對於切削晶片的厚度均勻性、表面粗糙度、破壞深度之影響，研究方法藉由Within-Wafer的觀察法可知在退火溫度提升到550℃時，單一晶片上不同位置厚度值及厚度標準差為最佳，並且切削至黏膠面位置時的厚度值與粗糙度跳動較小；Between-Wafer觀察法則可得知在經過550℃快速熱退火後的平均厚度，在不同切削成品位置可因為降低了晶片碎邊的情況因而得到較為平均的分佈。因此經快速熱退火後可由顯微觀察及測試，可改善切穿晶片過程中的晶格破裂情況、晶片邊緣不完整性與降低切穿時不穩定狀態所造成的破壞深度等情況。其中破壞深度可由550℃RTA後改善約52%。本研究重要成果可運用在研發切削薄化晶圓的晶片厚度與表面粗糙度改善，進而達到切削大尺寸高品質矽晶圓基板之應用。

Multi-wire sawing process has been widely applied to fabricate silicon substrate of solar cells. This study is to develop a rapid thermal annealing (RTA) process and experimental equipment to assist in recrystallize the poly-crystalline silicon ingot/brick by investigating the thickness deviation, surface roughness, damage layer of the sliced wafer for effects caused by RTA process. From test results, the lowest thickness distribution and thickness standard deviation of the sliced wafer are obtained for ingot annealed at RTA 550℃. By Within-Wafer (WTW) observation method, the lowest thickness and roughness variation are obtained for sliced location near the glued surface. By Between-Wafer (BTW) observation method, it can achieve the better average thickness distribution since less chipping occurred in the ingot annealed at RTA 550℃.From the RTA rectified material and microscopy tests, it can improve the destructed grain boundary, unsmooth edge and subsurface damage conditions by preventing the unstable slicing state occurred around the glued surface. Experimental results have verified the effects of RTA by SEM and FIB. The sub-surface cracks and sliced substrate have been observed to be reduced around 52% after 550℃ RTA. Results can be applied to improve wafer thickness uniformity and surface roughness of thinning wafer study for further slicing large size and high quality solar silicon substrates.

摘要	I
ABSTRACT	II
致謝	III
目錄	IV
圖目錄	VIII
表目錄	XV
符號表	XVII
第一章 緒論	1
　1.1研究背景	1
　1.2 研究目的與方法	6
　1.3 論文架構	7
第二章 文獻回顧	9
　2.1硬脆材料性質研究	10
　2.2硬脆材料破壞行為研究	16
　2.3 線鋸切削技術	25
　2.4 快速熱退火之運用	37
第三章 實驗原理與介紹	47
　3.1製造分析變異方程式	47
　　3.1.1線鋸切割製造分析	49
　　3.1.2快速熱退火製程分析	51
　3.2 矽材料	53
　3.3 快速熱退火介紹	58
　　3.3.1退火	58
　　3.3.2熱力學的退火	58
　　3.3.3快速熱退火	59
　　3.3.4 熱輻射	60
　　3.3.5黑體	61
　　3.3.6普朗克定律(Plank’s law)	63
　　3.3.7維恩位移定律(Wien’s law)	64
　3.4電子背向散射繞射(EBSD)圖譜原理	65
　　3.4.1 晶體織構(Crystal Texture)[47]	65
　　3.4.2極圖	67
　　3.4.3 反極圖	68
　3.5單顆磨料幾何模型	69
　　3.5.1漿料膜厚度	69
　　3.5.2 切削損失估算	70
　　3.5.3估算材料移除率	72
第四章  實驗設備與規劃	73
　4.1實驗設備	74
　　4.1.1 快速熱退火爐	74
　　4.1.2 微小維克氏壓印機	75
　　4.1.3 複線式線鋸切割機	76
　　4.1.4 轉子型黏度計	79
　4.2實驗耗材	79
　　4.2.1多晶矽晶片	79
　　4.2.2多晶矽晶碇	80
　　4.2.3綠色碳化矽	81
　　4.2.4 載液(二甘醇Diethylene Glycol, DEG)	82
　　4.2.5鋸割用鋼線	85
　4.3量測設備	87
　　4.3.1 光學顯微鏡	87
　　4.3.2掃描式電子顯微鏡	87
　　4.3.3高解析度場發射掃描式電子顯微鏡	88
　　4.3.4 拉伸試驗機	89
　　4.3.5雷射粒徑分析儀	90
　　4.3.6 雙束型發射聚焦離子束顯微鏡	91
　　4.3.7表面干涉儀	93
第五章 結果與討論	94
　5.1 多晶矽快速熱退火	96
　　5.1.1 多晶矽晶片快速熱退火實驗	97
　　5.1.2 多晶矽晶片、晶碇快速熱退火有限元素模擬	101
　　5.1.3 快速熱退火能量值估算	106
　5.2晶格觀察	108
　　5.2.1 晶片腐蝕晶格觀察	108
　　5.2.2背像電子散射圖譜觀察	111
　5.3 切削結果與討論	121
　　5.3.1 晶片厚度量測	122
　　5.3.2 晶片表面粗糙度觀察	128
　　5.3.3 黏膠面晶格觀察	136
　　5.3.4 切削破壞深度檢測	141
　5.4切削之材料移除率估算	149
　　5.4.1 理論材料移除量估算	150
　　5.4.2實際材料移除量估算	151
第六章 結論與建議	152
　6.1 結論	152
　6.2 建議	154
參考文獻	155
附錄A RTA規格	161
附錄C 熱輻射估算程式碼	165
附錄D 晶片表面粗糙度	166
作者簡介	181

                                

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