本研究係以超高頻電漿輔助化學氣相沉積系統(VHF-PECVD)製備本質氫化非晶矽膜層用於鈍化單晶矽基材，研究重點之一為與射頻電漿輔助化學氣相沉積系統(RF-PECVD)製備氫化非晶矽膜層來作比較外，另外又探討如何製備微晶矽薄膜作為異質接合太陽電池的p型窗口層及對元件特性的影響。
在本質氫化非晶矽膜層鈍化單晶矽晶片的實驗結果顯示，以超高頻電漿輔助化學氣相沉積系統所製備的本質氫化非晶矽薄膜具有較佳的鈍化品質。於矽晶片的兩面成長本質氫化非晶矽膜層後，其矽晶片的有效載子生命週期達 850 μs，暗示開路電壓為 701 mV。
另一方面，在成長p型微晶矽薄膜沉積於本質氫化非晶矽表面的研究，使用超高頻電漿輔助化學氣相沉積系統，並在本質氫化非晶矽成長膜厚僅數十奈米的p型微晶矽薄膜，獲得暗導電率為元件級的p型微晶矽薄膜。
最後，利用多重腔體連結式PECVD裝置製作矽晶異質接合太陽能電池，獲得元件最佳的開路電壓、電流密度及填充因子分別為633 mV、33 mA/cm2及65.2 %，光電轉換效率達13.6%。

In this thesis, we fabricated the intrinsic hydrogenated amorphous silicon/monocrystalline silicon (a-Si:H/c-Si) symmetrical heterostructure by PECVD . Emphasis was placed upon comparing the passivation property of the intrinsic a-Si:H layers. Also, the p-type hydrogenated microcrystalline silicon (μc-Si:H) films were prepared using various plasma excitation frequencies, and deposited on various heterogeneous materials to simulate the grow behavior in the real Silicon heterojunction solar cell fabrication.
In the first part, the result showed that the films prepared by VHF-PECVD exhibit much better interfacial passivation property compare with those prepared by the conventional RF-PECVD. In addition, the deposition behavior of p-type μc-Si:H thin layer showed dependence on the type of substrates used. For example, a p-type μc-Si:H layer with a dark conductivity of >1×10-4 S/cm can be achieved.
Finally, we used connected PECVDs reactors to fabricate silicon heterojunction solar cells. Up to date, the best cell was characterize by open-circuit voltage(Voc) = 633 mV, short-circuit current density(Jsc) = 33 mA/cm2 and fill factor(FF) = 65.2 %, respectively. The optoelectronic conversion efficiency of 13.6 % was achieved.

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