鈣鈦礦量子點發光二極體之研究｜國立臺灣科技大學博碩士論文系統

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研究生：	陳霆睿 Ting-Jui Chen
論文名稱：	鈣鈦礦量子點發光二極體之研究 The Study of Perovskite Quantum Dots Light Emitting Diodes
指導教授：	陳良益 Liang-Yih Chen
口試委員:	邱昱誠 Yu-Cheng Chiu 江志強 Jyh-Chiang Jiang
學位類別：	碩士 Master
系所名稱：	工程學院 - 化學工程系 Department of Chemical Engineering
論文出版年：	2021
畢業學年度：	109
語文別：	中文
論文頁數：	212
中文關鍵詞：	溴化銫鉛鈣鈦礦、量子點、發光二極體、配體移除、界面鈍化
外文關鍵詞：	cesium lead bromide perovskite, quantum dots, light-emitting diode, ligand removal, interfacial passivation
相關次數：	點閱：206 下載：0
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中文摘要    I
Abstract    III
致謝    V
目錄    VI
圖目錄    XI
表目錄    XXIII
第一章、 緒論    1
1-1 前言    1
1-2 研究動機與目的    2
第二章、 理論基礎與回顧    4
2-1 半導體與奈米材料    4
2-1-1 半導體材料    4
2-1-2 奈米材料    8
2-2 鈣鈦礦材料    11
2-2-1 鈣鈦礦結構    11
2-2-2 鈣鈦礦材料發展    12
2-3 CsPbX3鈣鈦礦量子點    13
2-3-1 CsPbX3鈣鈦礦量子點合成    13
2-3-2 鈣鈦礦量子點穩定性    26
2-3-3 鈣鈦礦量子點陰陽離子摻雜    38
2-4 鈣鈦礦量子點發光二極體    42
2-4-1 發光二極體各層結構介紹    42
2-4-2 量子點配體對元件性能影響    47
2-4-3 界面鈍化層對元件性能影響    57
第三章、 實驗設計    63
3-1 實驗流程圖    63
3-2 實驗藥品    64
3-3 實驗分析儀器與原理    69
3-3-1 紫外光-可見光光譜儀(UV/visible Spectrophotometer)    69
3-3-2 螢光光譜儀(Fluorescence Spectrophotometer)    71
3-3-3 X 光繞射分析儀(X-ray Diffraction，XRD)    72
3-3-4 場發穿透式電子顯微鏡 (Transmission electron microscope，TEM)    74
3-3-5 時間解析光致發光測量系統(Time-resolved photoluminescence，TRPL)    76
3-3-6 紫外光電子能譜儀（Ultraviolet Photoelectron Spectroscopy，UPS）    78
3-3-7 高解析度場發射型掃描式電子顯微鏡 (High Resolution Field-emission Scanning Electron Microscope，FE-SEM)    80
3-3-8 傅立葉轉換紅外線光譜儀(Fourier  transform  infrared  spectroscopy，FTIR)    81
3-3-9 電致發光量測系統(Electroluminescence ，EL)    82
3-4 實驗步驟    84
3-4-1 室溫法合成CsPbBr3量子點    84
3-4-2 以HBr水溶液進行CsPbBr3沉澱物後處理優化製程    87
3-4-3 CsPbBr3量子點表面配體控制程序    88
3-4-4 量測CsPbBr3量子點螢光量子效率    89
3-4-5 發光二極體元件製作    92
3-4-6 電子主導元件(electron only devie，EOD)製作    95
3-4-7 電洞主導元件(hole only device，HOD)製作    97
3-4-8 發光二極體效能指標介紹    100
3-4-8-1 啟動電壓（turn on voltage，VTO）    100
3-4-8-2 LED發光程度的單位    100
3-4-8-3 電流效率(current efficiency，CE)    103
3-4-8-4 外部量子效率(external quantum efficiency，EQE)    103
3-4-9 電子主導元件與電洞主導元件之分析與計算    107
第四章、 結果與討論    109
中文摘要    I
Abstract    III
致謝    V
目錄    VI
圖目錄    XI
表目錄    XXIII
第一章、 緒論    1
1-1 前言    1
1-2 研究動機與目的    2
第二章、 理論基礎與回顧    4
2-1 半導體與奈米材料    4
2-1-1 半導體材料    4
2-1-2 奈米材料    8
2-2 鈣鈦礦材料    11
2-2-1 鈣鈦礦結構    11
2-2-2 鈣鈦礦材料發展    12
2-3 CsPbX3鈣鈦礦量子點    13
2-3-1 CsPbX3鈣鈦礦量子點合成    13
2-3-2 鈣鈦礦量子點穩定性    26
2-3-3 鈣鈦礦量子點陰陽離子摻雜    38
2-4 鈣鈦礦量子點發光二極體    42
2-4-1 發光二極體各層結構介紹    42
2-4-2 量子點配體對元件性能影響    47
2-4-3 界面鈍化層對元件性能影響    57
第三章、 實驗設計    63
3-1 實驗流程圖    63
3-2 實驗藥品    64
3-3 實驗分析儀器與原理    69
3-3-1 紫外光-可見光光譜儀(UV/visible Spectrophotometer)    69
3-3-2 螢光光譜儀(Fluorescence Spectrophotometer)    71
3-3-3 X 光繞射分析儀(X-ray Diffraction，XRD)    72
3-3-4 場發穿透式電子顯微鏡 (Transmission electron microscope，TEM)    74
3-3-5 時間解析光致發光測量系統(Time-resolved photoluminescence，TRPL)    76
3-3-6 紫外光電子能譜儀（Ultraviolet Photoelectron Spectroscopy，UPS）    78
3-3-7 高解析度場發射型掃描式電子顯微鏡 (High Resolution Field-emission Scanning Electron Microscope，FE-SEM)    80
3-3-8 傅立葉轉換紅外線光譜儀(Fourier  transform  infrared  spectroscopy，FTIR)    81
3-3-9 電致發光量測系統(Electroluminescence ，EL)    82
3-4 實驗步驟    84
3-4-1 室溫法合成CsPbBr3量子點    84
3-4-2 以HBr水溶液進行CsPbBr3沉澱物後處理優化製程    87
3-4-3 CsPbBr3量子點表面配體控制程序    88
3-4-4 量測CsPbBr3量子點螢光量子效率    89
3-4-5 發光二極體元件製作    92
3-4-6 電子主導元件(electron only devie，EOD)製作    95
3-4-7 電洞主導元件(hole only device，HOD)製作    97
3-4-8 發光二極體效能指標介紹    100
3-4-8-1 啟動電壓（turn on voltage，VTO）    100
3-4-8-2 LED發光程度的單位    100
3-4-8-3 電流效率(current efficiency，CE)    103
3-4-8-4 外部量子效率(external quantum efficiency，EQE)    103
3-4-9 電子主導元件與電洞主導元件之分析與計算    107
第四章、 結果與討論    109
4-1 合成CsPbBr3量子點製程優化與性質分析    109
4-1-1 CsPbBr3量子點合成與性質分析    109
4-1-2 以氫溴酸水溶液進行CsPbBr3沉澱物後處理優化製程探討    118
4-2 CsPbBr3量子點發光二極體製備與光電特性分析    130
4-2-1 移除CsPbBr3量子點表面配體對提升發光二極體性能之效能探討    134
4-2-2 探討以UV光移除CsPbBr3量子點表面配體對提升發光二極體性能之效能    146
4-2-3 探討以熱處理移除CsPbBr3量子點表面配體對提升發光二極體性能之效能    150
4-2-4 探討以鈍化層修飾CsPbBr3量子點薄膜界面對提升發光二極體性能之效能    156
第五章、 結論    167
第六章、 參考文獻    169


                                

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