本論文第一部分探討金屬鋁層與氫化非晶矽層接合後，
在低溫下鋁擴散進入非晶矽層形成 p 型膜的現象。研究發現，
當擴散溫度 200℃、擴散時間大於 30 分鐘，p 型膜層呈現微
晶化的結構，其導電率可達到 0.24 S/cm，載子濃度達 5.8×1020
cm- 3
；當擴散溫度控制在 175℃、擴散時間大於 90 分鐘，膜
層依然可保持非晶結構，其導電率為 0.46 S/cm，載子濃度僅
4.58×1014 cm-3
。另由不同擴散溫度下的鋁濃度分布 SIMS 實
驗結果發現，鋁在氫化非晶矽膜層內的擴散活化能為 0.668
eV。
第二部分探討以氮氣、矽甲烷、氫氣製備氫化非晶氮化
矽薄膜應用於鈍化單晶矽基材表面的研究。結果發現，氮氣
流量為 40 sccm、基材溫度為 400℃、氫氣流量為 10 sccm 時，
所製備的氮化矽層在鈍化 n 型單晶矽基材表現出相對較高的
載子生命周期 1115 µs。
第三部分探討應用新型鋁低溫擴散製程到實際單矽晶
太陽能電池製作，形成 a-Si:H(n)/a-Si:H(i)/c-Si(p)/Al+ (p+ )的
異質接面結構後，藉由 µ-PCD 量測獲得理論值開路電壓可達
到 687 mV。

First part of this thesis fabricates p+ thin film by
aluminum low temperature diffusion in amorphous silicon thin
film. p+ thin film fabricated under different experimental
parameters, such as diffusion temperature and diffusion time.
The p+ thin film measured by Raman, IV, Hall and SIMS which
showed the structure, conductivity, carrier concentration as
well as Al profile in p+ thin film. As a results, the film showed
microcrystalline structure when diffusion temperature was
higher than 200℃. The conductivity and carrier concentration
of p+ thin film followed by 12.2 Scm- 1 and 5.85×1020 cm- 3 .
When diffusion temperature at 175 ℃ , the film showsed
amorphous structure. The conductivity and carrier
concentration of p+ thin film followed by 0.45 Scm- 1 and 4.58×
1014 cm- 3. Active energy of aluminum diffuse in a-Si:H is 0.688
eV.
Second part of this thesis fabricates a-SiNx by nitrogen.
The a-SiNx thin film fabricateed under different experimental
parameters, such as N2 flow rate, deposition temperature and
H2 flow rate. The a-SiNx thin film was measured by XPS, FTIR,
and Sinton which showed the N/Si ratio, bonding properties
and carrier lifetime. Results showed that N2 flow rate,
deposition temperature and H2 flow rate follow by 40 sccm,
400℃ and 10 sccm had best carrier lifetime which was 1115
µs.
Third part of this thesis fabricated low temperature
diffusion solar cell. According to different sequence of thin
film layers deposited and aluminum layer deposited that we
could use Sinton measurement to know the implied Voc. The
best result reached 687 mV.

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