為了達成塑膠基板薄膜電晶體的目標，我們成功開發出利用半吸光層經過準分子雷射回火後，可以實現低溫閘極絕緣膜的改質效果。而此絕緣膜是由100℃具吸收係數的SiONx與SiO2組成。
我們利用吸收係數4000cm-1在經過雷射回火能量500mJ/cm2在重複照射20次後，可以得到崩潰電場由原先的4.37MV/cm提升到6.86MV/cm、電阻率由4.27×1013Ω-cm提升到4.27×1013Ω-cm、介電係數從3.14提升到3.49、固定電荷量從2.10×1012減少為9.42×1011、折射率從1.459增加到1.468、蝕刻速率從2.68nm/s減少為2.15nm/s。再經過簡易型薄膜電晶體的製作後，驗證出具有基本的電晶體特性。

In order to accomplish the target of plastic substrate thin film transistor , we successfully develop the utilization of semi-photo sensitive layer after pass through excimer laser annealing, it can realize the Modification effect of the low temperature gate oxide. Therefore, oxide layer is consists of SiO2 and SiONx which contain absorption coefficient. And the highest temperature of this layer is 100℃.
We can increase breakdown electric field from 4.37MV/cm to 6.86MV/cm, resistivity from 4.27×1013Ω-cm to 4.27×1013Ω-cm, dielectric coefficient from 3.14 to 3.49, Qss(fixed oxide charge) from 2.10×1012 to 9.42×1011, index of refraction from 1.459 to 1.468, etching rate from 2.68nm/s to 2.15nm/s through exploiting 20 times 500mJ/cm2 excimer laser annealing in the same spot of the oxide layer which has 4000cm-1 absorption coefficient. From fabricating simple thin transistor, we can obtain basic transistor property.

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