本論文主要以硒化照射程序所影響的缺陷分佈和本質缺陷的相互作用作為探討的議題，針對導入硒化照射程序的特性，開發其照射程序對於缺陷抑制的機制及效果。論文中以螢光光譜解析觀察缺陷抑制的變化，並探討缺陷對於硒化銅銦鎵薄膜的品質及太陽能電池效率的影響。
硒化照射程序，此一技術乃由所屬東京工業大學山田 明教授研究室的西村 昂人所開發。此一照射程序乃在三階段製備法的第二階段後引入。該程序透過控制CIGS薄膜沉積時的Cu2Se層，進而有效抑制少數載子在CIGS層和CdS層之間的界面處複合。硒化照射程序的效果已由西村 昂人所詳敘報導。
本實驗以分子束磊晶設備並透過共蒸發法來製備硒化銅銦鎵薄膜，依序製備有無導入硒化照射程序的樣品並將其製作成 Al / ZnO / CdS / CIGS / Mo / SLG的CIGS太陽能電池結構，發現對於有導入硒化照射程序的樣品，其光電轉換效率約為17％，而對於未導入硒化照射程序的樣品，其光電轉換效率為16％。透過低溫（80K）下所測量的螢光光譜，明顯觀察到導入引入硒化照射程序時，缺陷所對應的峰強度明顯下降。此外，透過改變激發功率，PL光譜中的變化因硒化照射程序的導入，而有不同的變化。這樣的差異可歸因於硒化照射程序抑制缺陷的形成。
本論文根據時間解析光譜的量測結果，發現有導入硒化照射程序的樣品，其載子生命週期為92.3 ns較未導入硒化照射程序的樣品（72.3 ns）長許多．最後，透過軟體SCAPS的模擬，論證其缺陷對於CIGS太陽能電池的影響，而模擬的結果也與論文中的實驗數據相符。

In this thesis, the influence of Se irradiation procedure on the defect distributions and the interaction of intrinsic defects in the CIGS thin-film were studied. The difference of the films properties between the samples prepared with and without the Se irradiation procedure was investigated through the morphology change and electrical characteristic. Photoluminescence (TR-PL) was used for investigating the defect properties in CIGS thin-film solar cell and using time-resolved photoluminescence to estimate the minority carrier lifetime for CIGS thin-film.
The Se irradiation procedure, which was developed by Takahito Nishimura from the laboratory of Akira Yamada, Tokyo Tech. The Se irradiation procedure was introduced after the second stage of the three-stage method. The procedure controls the Cu2Se layer during CIGS deposition, which leads to suppressing the recombination of minority carrier at the interfaces between the CIGS layer and the CdS layer.
In this dissertation, the samples prepared with and without the Se irradiation procedure was fabricated by the co-evaporation process using molecular beam epitaxy (MBE). Then, the CIGS solar cells with a Al/ZnO/CdS/CIGS/Mo/SLG structure were fabricated, the conversion efficiency (η) for the samples prepared with the Se irradiation procedure was 17%, which is higher than that (16%) of the samples prepared without the Se irradiation procedure. Through the photoluminescence (PL) spectra measured at a low temperature of 80K, the peak intensity which corresponding to the defects were significantly decreased after introducing the Se irradiation procedure. Furthermore, by examined the PL spectra of CIGS via variation of excitation power, the peak intensity of the samples prepared with and without the Se irradiation procedure showed different behavior. Such a difference could attribute the suppression of defect formation to the Se irradiation procedure.
According to the results of time-resolved photoluminescence (TR-PL), the bulk recombination lifetime was 92.3 ns for the sample prepared with the Se irradiation procedure, which is longer than that (72.3 ns) of the sample prepared without the Se irradiation procedure. Last, with the computer simulations, SCPAS, it is clear that the defects have a negative impact on solar cells performance, which matches our experimental data. Our results suggest that the critical effect of Se irradiation procedure, the procedure build a better quality of CIGS film by reducing the amount of the defects.

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