本論文以化學汽相傳導法(Chemical vapor transport method)，利用碘(Iodine)當作傳導劑成長出Mo1-xNbxS2(0 ≤ x ≤ 1)共21種系列成分化合物之單晶，並對其系列化合物進行相關特性之研究。
其晶體尺寸最大則達到1.5 × 1.5 cm2左右。以六方晶系為單位晶胞，觀察出二硫化鉬屬於2H結構，而二硫化鈮為3R結構。並隨著鈮成分含量愈多，其化合物之晶格常數a有變大趨勢，而晶格常數c有減少趨勢，造成各成分之晶胞體積亦隨之變大。藉由拉曼極化分析於基平面上的拉曼振動模態中觀察出2H與的E2g1、A1g 與3R相的E(TO)、A1(LO)皆存在於Mo1-xNbxS2當中，呈現二次多項式關係的變化趨勢，並且隨著金屬鉬取代鈮的比例增加，振動模態皆往低頻率方向位移，推估是原子間的振動力學常數變小所導致的。
從電傳導特性指出，隨著鈮成分含量愈多，其化合物的導電度呈線性遞增趨勢。同時在20 K~290 K溫度環境下觀察出半導體特性的二硫化鉬，到金屬特性的二硫化鈮之間隨溫度變化的趨勢，同時找出其在Mo0.9Nb0.1S2為半導體轉金屬特性的起始成分化合物。

Single crystals of Mo1-xNbxS2 have been grown by chemical vapor transport method using Iodine as a transport agent. These series platelets up to 1.5×1.5 cm2 surface area and 0.2~0.3 cm in thickness be obtained. X-ray diffraction patterns show two-layered hexagonal primitive unit cell (2H) for molybdenum disulfide and three-layered rhombohedral primitive unit cell (3R) for niobium disulfide. The effect for all niobium-doped samples are an increase in lattice a and a decrease in lattice c, which led to a increase of the cell volumes. The co-existence on basal plane for both 2H-type and 3R-type vibration active-mode were observed by polarization dependent Raman scattering. With substituted Nb concentration increase, all vibration active-mode of series compounds are shifting to low-frequency, which reveal parabolic relation.
Molybdenum disulfide belongs to semiconductor whereas niobium disulfide belongs to metallic compound. It is found that linear trend of conductivity due to doped-Nb concentration increase. Temperature dependent resistivity for each compound shows the progress of semiconductor-metal transition. The critical composition happened on x ≈ 0.1 to transfer from semiconductor to metallic characteristic.

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