焦電薄膜感測器乃利用焦電效應，將溫度變化轉為焦電訊號。焦電感測器之焦電響應為感測器優劣之重要指標，其中影響焦電響應主要因素為焦電薄膜品質，而薄膜品質與薄膜之表面形貌、晶格結構及殘留應力等息息相關。本文使用三種射頻源功率90W、120W及150W進行單階段濺鍍氧化鋅焦電薄膜，及此三種射頻源功率構成三種組合以雙階段濺鍍技術沈積氧化鋅焦電薄膜。氧化鋅焦電薄膜感測器主要利用微機電製程製作，其中包含背面蝕刻窗型孔；以LPCVD來沈積氮化矽隔熱層；電子束蒸鍍機沈積上下電極層；及濺鍍機沈積氧化鋅焦電薄膜。焦電感測器量測方式主要以氦氖雷射，搭配斷波器控制紅外線的頻率，來量測焦電感測器的電壓響應。且使用X射線繞射儀(XRD)及掃描式電子顯微鏡(SEM)，來探查氧化鋅薄膜的晶體結構及表面形貌；及奈米壓痕儀來檢測氧化鋅薄膜機械性質；再以3D表面輪廓儀，量測感測器上各薄膜層製程前後曲率變化情況，並利用參差應變配合梁理論發展多層薄膜結構之殘留應力數學模型，藉由各薄膜之厚度、彈性係數及曲率變化，並配合數學模型探討焦電薄膜感測器結構上，各薄膜層之應力狀態。
就感測器設計而言，部份電極之焦電感測器已證實比全覆蓋電極之焦電感測器有優良之焦電響應，主要因未覆蓋的焦電感測器中，裸露氧化鋅薄膜有助於增加吸收外在能量。故本文提出四種不同上電極形狀設計，分別為全覆蓋型、靶狀型、十字型及網狀型，對焦電感測器進行優化，試圖再提升焦電響應，其中以網狀型上電極所製造之焦電感測器獲得較佳之焦電響應。另外以陣列串接方式，提出新型焦電感測器設計，已大幅提升焦電響應。
氧化鋅焦電薄膜感測器之電壓響應與上電極形狀、氧化鋅薄膜表面形貌、晶格結構及殘留應力相關。雙階段濺鍍氧化鋅薄膜中，以 120W配合150W所製作之感測器的電壓響應最為優異且氧化鋅薄膜具有極佳c-axis取向之結晶結構，但其氧化鋅焦電層之殘留應力具有較高壓應力，藉由X射繞射儀及掃描式電子顯微鏡量測結果，此應力將有助氧化鋅薄膜形成較緻密及較佳之薄膜品質，並進而提升焦電感測器之電壓響應。

Thin-film ZnO pyroelectric sensors use the pyroelectric effect to convert temperature variation to corresponding electrical signal. The quality of ZnO films is a key factor to determine the responsivity of ZnO pyroelectric sensors, which can be influenced by the morphology, the crystal structure and the residual stress of ZnO films. The ZnO pyroelectric sensor is a multilayer structure and fabricated by the procedure of MEMS fabrication included backside-etching windows, deposition of isolation layer by LPCVD, deposition of top and bottom electrodes by e-beam evaporator, and sputtering of ZnO films with 500 nm thickness under three various RF powers as 90W, 120W, 150W, and two-step sputtering technique. A calibrated He-Ne laser and a mechanical chopper producing a modulated frequency are used to measure the voltage responsivity of ZnO pyroelectric sensors. In addition, XRD(X-ray Diffraction) and SEM(scanning electron microscope) are used to examine the morphology, the crystal structure of ZnO films. The data from curvature variation of each layer before and after deposited, thickness, Poisson’s ratio and Young’s modulus of each film are used to estimate the residual stress existed in each layer of multilayer ZnO pyroelectric sensor through a multilayer analytical model used.
Pyroelectric sensor with partially covered electrode (PCE) has been proved to reveal higher responsivity than that with fully covered electrode. The uncovered ZnO thin film directly exposes surface to increase the absorption of incident energy in PCE pyroelectric sensor. Therefore, the design of top electrode is greatly to influence the temperature field in pyroelectric films. Top electrodes with four shapes namely crisscross, target, web and full cover types, are used to discuss the relation between electrode shapes and responsivity of devices. The pyroelectric sensor with top electrode of web shape can enhance the responsivity of sensor. In addition, an array consisted of four ZnO pyroelectric sensors with a series connection is also produced and attempted to improve the responsivity of sensors.
The results of current work present that the voltage responsivity of ZnO pyroelectric sensor is significantly related to the residual stress, the morphology, the crystal structure of ZnO films. Obviously, the ZnO film sputtered by the two-step sputtering technique with a lower-power step (120W) followed by a higher-power step (150W) can significantly improve the responsivity of the ZnO pyroelectric sensor, which possesses a high compression stress, the growth characteristic of strongly preferred orientation toward the c-axis and more compact crystal structure.

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