由於金屬氧化物薄膜電晶體的製程特質及材料特性，使它們在新興的薄膜電晶體應用上成為最具有競爭性的選擇，包含均勻性好可以應用在大尺寸的面板、可在低溫下製作而應用於可撓式的裝置以及低成本製作等特殊需求的產品上。為了滿足下一世代的顯示器，薄膜電晶體的載子遷移率需要更高，所以本論文將搭配高介電係數材料二氧化鉿及氧化鋁來製備元件之閘極絕緣層，並使用氧化銦鋅錫來當作主動層，因為氧化銦鋅錫具有比氧化銦鎵鋅更高的載子遷移率，但是氧化銦鋅錫其材料特性較不穩定，所以本論文將透過更換閘極電極及製作鈍化層來提升元件穩定性。
首先，我們利用磁控濺鍍以及原子層沉積製作氧化銦鋅錫薄膜電晶體之閘極絕緣層，分析不同閘極絕緣層的製程方式、薄膜厚度以及材料比例對於元件的影響，並找出一個最佳的參數。之後，為了提升元件的穩定度，我們將閘極換成了穩定度較高的氮化鉭，並且以原子層沉積製作了以多層堆疊二氧化鉿及氧化鋁形成之鈍化層。在本實驗中發現，原子層沉積之氧化鋁具有較少的介面缺陷，在遲滯特性方面有大幅度的改善。而具有圖案化的氮化鉭閘極有效的降低了元件的漏電流，有效的提升了元件的製程良率。在鈍化層方面，因為薄膜品質較為緻密能有效阻擋水氣及氧氧侵蝕主動層，大幅地提高了元件的穩定度。

Amorphous oxide semiconductor (AOS) materials are considered to be the most competitive thin film transistor (TFT) material for last decade. They have several advantages such as great uniformity for large size display, low fabrication temperature and low production cost. For next generation display, the TFT devices need being improved, especially in mobility. In order to get higher on /off current ratio on AOS-TFT, high-k dielectric was used as the gate insulator in TFT structure. And then in order to pursue greater AOS TFT performance, indium zinc tin oxide (IZTO) was introduced as the active layer, because IZTO-TFT has higher mobility than IGZO-TFT. However, the material properties of IZTO are relatively unstable, so this work will displace indium tin oxide (ITO) to tantalum mononitride (TaN) and manufacture passivation layer to improve stability of IZTO TFT.
First, we fabricated gate insulator of IZTO-TFT with RF magnetron sputter deposition and atomic layer deposition (ALD), analyzed the influence of different gate insulator layer process methods, thickness and the ratio of hafnium oxide (HfO2) and aluminum oxide (Al2O3) and try to find a best condition. Afterwards, in order to improve the stability of the device, we decide to change the gate electrode. Since TaN has higher stability, we replace the indium tin oxide (ITO) with TaN. Then, we fabricated a passivation layer formed by stacking HfO2 and Al2O3 by atomic layer deposition. In this experiment, we found that the Al2O3 deposited by ALD has fewer interface traps and has a significant improvement in hysteresis characteristics. The patterned TaN as gate electrode effectively reduces the leakage current of the device and improves the process yield of the device. In the passivation layer, due to better film quality can effectively block the corrosion of water vapor and oxygen and improve the stability of device.

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